SS8550 GWSEMI | Alldatasheet
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FEATURES
MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA, I E=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, I B=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, I C=0 -5 V Collector cut-off current ICBO VCB=-40V, I E=0 -0.1 µA Collector cut-off current ICEO VCE=-20V, I B=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, I C=0 -0.1 µA hFE(1) VCE=-1V, I C=-100mA 200 350 DC current gain hFE(2) VCE=-1V, I C=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, I B=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, I B=-80mA -1.2 V Base-emitter on voltage VBE(on) IC=-1V, V CE=-10mA -1 V Base-emitter positive favor voltage VBEF IB=-1A -1.55 V Transition frequency fT VCE= -10V, I C= -50mA f=30MHz 100 MHz output capacitance Cob (VCB=-10V,IE=0,f=1MHz) 20 pF SOT-23 1．BASE 2．EMITTER 3．COLLECTOR TRANSISTOR(PNP) Plastic-Encapsulate Transistors S8550S
-200 -300 -900 -1000 -0.1 -10 -100 -1000 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -1000 100 -10 -1 -1000 -10 -100 -1000 -1 -100 100 0 25 50 75 100 125 150 100 150 200 250 300 350 VCE=-1V Ta=25℃ Ta=100 o C VBE — — IC COLLCETOR CURRENT IC (mA) 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA IB=0.1mA Static Charact eristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) β=10 Ta=25℃ Ta=100℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) VBEsat — — IC Ta=100℃ Ta=25℃ 500 VCE=-1V DC CURRENT GAIN hFE IChFE — — Cob Cib 100 -0.2 f=1MHz IE=0/ IC=0 Ta=25 o C Cob/ Cib — — VCB/ VEB CAPACITANCE C (pF) 20-1 REVERSE VOLTAGE V (V) Ta=25℃ 0.2 Ta=100℃ β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -10 -100 COLLECTOR CURRENT IC (mA) -1 -10 -100 COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) -10 COLLECTOR CURRENT IC (mA) VCE-10V Ta=25 o C -400 -500 -600 -700 -800 BASE-EMMITER VOLTAGE VBE (mV) 500 Pc — — Ta COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta (℃) VCEsat — — IC fT — — IC Typical Characteristics TRANSISTOR(PNP) S8550S
Plastic surface mounted package; 3 leads SOT-23 TRANSISTOR(PNP) S8550S