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T RANSISTOR ( ) 1. EMITTER 2. BASE 3. COLLECTOR Collector-Base Voltage -40 V Collector-Emitter Voltage V Emitter-Base Voltage -5 V Collector Current -Continuous -1.5 A Collector Power Dissipation mW Operation Junction and Storage Temperature RangeTJ, -55 Thermal Resistance rom Junction o Ambient /W S S -25 Equivalent Circuit TO-92 Bulk 1000pcs/Bag Tape 2000pcs/Box TO-92 Plastic-Encapsulate Transistors SS8550= Device code Solid dot= Green molding compound device, if none, the normal device Z= Rank of h FE, XXX= Code 2020. 05. 15 1/6Revision No : 0 SEMICONDUCTOR TECH NIC AL DATA SS8550
V(BR)CBO IC=-100uA, IE=0 -40 V V(BR)CEO IC=-0.1mA, IB=0 -25 V V(BR)EBO IE=-100 A, IC=0 -5 V ICBO V CB=-40V, IE=0 -0.1 A ICEO V CE=-20V, IE=0 -0. A IEBO V EB=-5V, IC=0 -0 .1 uA hFE(1) V CE=-1V, IC=-100mA 85 400 hFE(2) V CE=-1V, IC=-800mA 40 VCE(sat) I C=-800mA, IB=-80mA -0. V VBE(sat) I C=-800mA, IB=-80mA -1.2 V VBE(on) V CE=-1V, IC=-10mA -1 V Cob VCB=-10V, IE=0mA,f=1MHZ 20 pF fT VCE=-10V, IC=-50mA,f=30MHZ 100 MHz B C D D3 85-160 120-200 160-300 300-400 ELECTRICAL CHARACTERISTICS (Ta=25 ℃, unless otherwise specified) 2020. 05. 15 2/6Revision No : 0 SS8550
-1 -10 -100 -1000 100 1000 -0 -1 -2 -3 -50 -100 -150 -200 -250 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -10 -100 -1000 -1 -10 -100 -1000 -10 -100 -1000 -0.1 -1 -10 100 -1500 Ta=25 -300 Ta=100 COMMON EMITTER VCE=-1V hFE —— IC 300 -30-3 DC CURRENT GA N hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER Ta=25 Static Characteristic -1.0mA -0.7mA -0.9mA -0.6mA -0.5mA -0.8mA -0.4mA -0.3mA -0.2mA IB=-0.1mA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -1500-300 Ta=100 Ta=25 =10 -30-3 VBEsat — — IC BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) -1500 -300 Ta=100 Ta=25 -30 COMMON EMITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V) -1500 -300 Ta=100 -300 -30 -30-3 VCEsat —— IC =10 Ta=25 COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) VCB/ VEB IC —— VBE Cob Cib -0.3 -20-3 f=1MHz IE=0/IC=0 Ta=25 Cob/ Cib —— CAPACITANCE C (pF) REVERSE BIAS VOLTAGE V (V) Typical Characteristics 2020. 05. 15 3/6Revision No : 0 SS8550
Typical Characteristics(Con.) 2020. 05. 15 4/6Revision No : 0 SS8550 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -2 -10 -100 100 1000 PC —— Ta COLLECTOR POWER DISSIPATION PC (W) AMB ENT TEMPERATURE Ta ( ) fT —— IC 300 -30-6 COMMON EMITTER VCE= -10V Ta=25 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA)
A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0 055 b 0.380 0.550 0.015 0 022 c 0.360 0.510 0.014 0.020 D 4. 4.700 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14. 500 0. 555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 1.270 TYP 0.050 TYP TO-92 Suggested Pad Layout 2020. 05. 15 5/6Revision No : 0 SS8550
- 05. 15 6/6Revision No : 0 SS8550