SS8550 DAYA | Alldatasheet

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Technical content

TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR ( PNP

FEATURES

P C : 1 W (T A =25 MAXIMUM RATINGS (T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current-Continuous -1.5 A T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C =-100uA, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-0.1mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-40V, I E =0 -0.1 μA Emitter cut-off current I CEO V CE =-20V, I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-5V, I C =0 -0.1 uA h FE(1) V CE =-1V, I C =-100mA 85 400 DC current gain h FE(2) V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B =-80mA -1.2 V Base-emitter voltage V BE(on) V CE =-1V, I C =-10mA -1 V Out capacitance Co b V CB =-10V, I E =0mA,f=1MH Z 20 pF Transition frequency f T V CE =-10V, I C =-50mA,f=-30MH Z

100 MHz

FE(2) Rank B C D D3 Range 85-160 120-200 160-300 300-400 TO-92 1. EMITTER 2. BASE 3. COLLECTOR

Typical Characteristics SS8550