SS82 ZSELEC | Alldatasheet
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S ur g e O v e r l o a d R a t i n g t o200A P e a k 8.0 A SURFACE MOUNT SCHOTTKY BARRIER DIODE SS82 – SS8200 M aximum Ratings and Electrical Characteristics @TA=2 5°C unless otherwise specified Note: 1. Mounted on P.C. Board with 5.0mm 2 c opper pad area. 1 of 2 SS82 – SS8200 0 A UnitCharacteristic Symbol 200 A V 250 pF 20 °C/W -65 to +150 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RMS Reverse Voltage VR( RMS) A verage Rectified Output Current @T L = 95°C (Not e 1) IO Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFS M Forward Voltage @I F = 8.0A V FM P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 20 mA T ypical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 1) R/G01JA Operating and Storage Temperature Range Tj, TST G V SS82 SS83 SS84 SS85 SS86 SS88 8100 SS 55 0.75 0.85 0.92 V 100 150 105 200 140 8150 SS SS 8200 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Case: SMC/DO-214AB, Molded Plastic I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y C l a s s i f i c a t i o n R a t i n g 9 4 V - O G u a r d R i n g D i e C o n s t r u c t i o n For Use in Low Voltage Application Feat ures Schottky Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 M echanical Data ! T erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version A B C D GH E J Weight: SMC Weight: 0.20 grams (approx.) SMC/DO-214 AB Dim M in Max A 5.59 6. B 6.60 7. C 2.75 3. D 0.152 0. 305 E 7.75 8. F 2.00 2. G 0.051 0. 203 H 0.76 1. All Di mensions in mm
INSTANTANEOUS FORWARD CURRENT (A) F V , INSTA NTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F 100 1000 0.1 1 10 100 C , JUNCTION CAPACITANCE (pF) j V , REVERSE VOL T AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C
1 MHz
j 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 2.0 8.0 25 50 75 100 125 150 I A VERAGE FORWARD CURRENT (A) V), T, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L 2 of 2 SS82 – SS8200 SS82 – SS8200 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 SS82 - SS84 T - 25ºCJ I Pul se Width = 300 sF µ 100 150 200 11 0 100 I , PEAK FORWARD SURGE CURRENT (A) F NUMB E R OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive P eak Fwd Surge C urrent Singl e Half-Sine-Wave (JEDEC Method) T = 100°CT SS88 - SS8200 4.0 6.0 10.0 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SS85 - SS86