SS82 SAMYANG | Alldatasheet

Document overview

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Technical content

Features

  • Guardring for overvoltage protection
  • Low power loss
  • Extremely fast switching
  • High forward surge capability
  • High frequency operation
  • Solder dip 260 °C max. 10 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Mechanical Data
  • Package: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
  • Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • Polarity: Color band denotes the cathode end ■ Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT SS82 SS84 SS86 SS810 SS815 SS820 Device marking code SS82 SS84 SS86 SS810 SS815 SS820 Repetitive Peak Reverse Voltage VRRM V 20 40 60 100 150 200 Average Rectified Output Current @60Hz sine wave, Resistance load, Ta (FIG.1) IO 0 . 8 A Surge(Non-repetitive)Forward Current @60Hz Half-sine wave,1 cycle, Ta=25℃ IFSM 0 2 1 A Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ 0 5 1 + ~ 5 5 - 5 2 1 + ~ 5 5 - ■ Electrical Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS SS82 SS84 SS86 SS810 SS815 SS820 Maximum instantaneous Maximum DC reverse current at rated DC blocking voltage per diode IR mA Ta=25℃ 1 . 0 2 . 0 Ta=100℃ 0 . 5 0 2 Typical junction capacitance Cj pF Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C. 450 350 270 180 SAM YANG SS82-SS820SAMYANG ELECTRONICS All d ata sheet.com

www.diode.co.kr ■ Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT SS82 SS84 SS86 SS810 SS815 SS820 Thermal Resistance Between junction and ambient RθJ-A ℃/W (1) Between junction and lead RθJ-L 2 1 Note (1) ■ Ordering Information (Example) PREFERED P/N PACKAGE CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE SS82~SS820 F1 Approximate 0.254 3000 6000 42000 13” reel ■ Characteristics (Typical) 0.1 0.3 TJ=25℃ Pulse width=300us 1% Duty Cycle 1.0 100 SS82 SS84 SS86 SS810 SS815-SS820 0.9 1.0 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) FIG.3: Forward Voltage 0 0 5 10 5 Resistive or Inductive LoadP.C.B. Mounted on 0.6"×0.6"(16mm×16mm)Copper Pad Areas 100 12.0 25 75 125 10.0 8.0 6.0 2.0 4.0 Average Forward Output Current (A) Lead Temperature (℃) FIG.1: Io-TL Curve SS82-SS84 SS86-SS820 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 1000 200 160 120 Peak Forward Surge Current (A) Number of Cycles FIG.2: Forward Surge Current Capability Tj=25℃ Tj=100℃ 0.001 0.01 0 20 40 60 80 100 0.1 1.0 100 SS810-SS820 SS86 SS82-SS84 FIG.4: Typical Reverse Characteristics Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (mA) SAM YANG SS82-SS820SAMYANG ELECTRONICS All d ata sheet.com

www.diode.co.kr ■ Outline Dimensions DO-214AB (SMC) Dim Min Max A 6.60 7.11 B 2.85 3.27 C 5.59 6.22 D 7.75 8.13 E 1.99 2.61 F 0.15 0.31 G 0.76 1.52 H 0.10 0.20 ■ Suggested pad layout DO-214AB (SMC) Dim Min P1 9.9 P2 3.84 Q1 3.03 Q2 3.82 Dimensions in m illimeters Q2Q1 Dimensions in millimeters DO-214 AB(SMC) SAM YANG SS82-SS820SAMYANG ELECTRONICS All d ata sheet.com