SS8014-30GTR

SS8014 SSC | Alldatasheet

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Technical content

www.SiliconStandard.com 1 of 10 SS8014-xxG 300mA Low-Noise LDO Regulators

FEATURES

Ultra low output noise of 30µV (rms) Ultra low no-load supply current of 55µA Ultra low dropout of 70mV at 50mA load Guaranteed 300mA output current Over-temperature and short-circuit protection Fixed: 3.30V (SS8014-33), 3.0V (SS8014-30) 2.85V (SS8014-29), 2.80V (SS8014-28 2.70V (SS8014-27 ), 2.50V (SS8014-25 ) 1.80V(SS8014-18 ), 1.50V(SS8014-15 ) Max. supply current in shutdown mode < 1µA Stable with low cost ceramic capacitors

APPLICATIONS

Battery-Powered Application

DESCRIPTION

The SS8014-xxG is a low supply-current, low-dropout linear regulator that comes in a space-saving SOT23-5 package. The supply current at no -load is 55µA. In the shu tdown mode, the maximum supply current is less than 1µA. Operating voltage range of the SS8014 is from 2.5V to 5.5V. The over -current protection limit is set at 500mA typical and 400mA minimum. An over-temperature pro- tection circuit is built-in to the SS8014 to prevent thermal overload. These power saving features make the SS8014 ideal for use in such battery-powered applications as notebook computers, cellular phones, and PDA’s.

ORDERING INFORMATION

Part Number Marking Voltage SS8014-15GTR 4Gxx 1.50V SS8014-18GTR 4Hxx 1.80V SS8014-25GTR 4Exx 2.50V SS8014-27GTR 4Axx 2.70V SS8014-28GTR 4Bxx 2.80V SS8014-29GTR 4Fxx 2.85V SS8014-30GTR 4Cxx 3.0V SS8014-33GTR 4Dxx 3.30V Pin Configuration Typical Operating Circuit OUT BYP SOT23-5 1IN GND SHDN IN OUT GND SHDNCIN 1µF_BATTERY OUTPUT VOLTAGE COUT 1µFBYP CBYP 10nF OUT BYP SS8014-xx 1IN GND SHDN IN OUT GND SHDN SS8014-xxCIN 1µF _BATTERY OUTPUT VOLTAGE COUT 1µFBYP CBYP 10nF 1/12/2005 Rev.2.10 This device is only available with Pb-free lead finish (second-level interconnect).

www.SiliconStandard.com 2 of 10 1/12/2005 Rev.2.10 SS8014-xxG Absolute Maximum Ratings Continuous Power Dissipation (TA = +25°C)

Electrical Characteristics

(VIN=VOUT(STD)+1V, V SHDN =VIN, TA=TJ =25°C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Voltage (Note 2) VIN Note2 - 5.5 V Variation from specified VOUT , IOUT =1mA,V OUT ≥2.5V version -2 - 2 For SS8014-18, IOUT =1mA -3 - 3 Output V oltage Accuracy VOUT For SS8014-15, I OUT =1mA -4 - 4 Maximum Output Current 300 - mA Current Limit (Note 3) ILIM 500 - mA ILOAD = 0mA 55 120 ILOAD = 50mA 145 Ground Pin Current IQ VIN =3.6V ILOAD = 300mA 265 µA IOUT = 1mA 2 IOUT = 50mA, V OUT ≥ 2.7V Version 70 VO (NOM) ≥ 3.0V 230 2.5V ≤V O (NOM) ≤2.85V 250 VO (NOM) = 1.8V 380 IOUT = 150mA VO (NOM) = 1.5V 510 VO (NOM) ≥ 3.0V 450 600 2.5V ≤V O (NOM) ≤2.85V 500 660 VO (NOM) = 1.8V 760 960 Dropout Voltage (Note 4) VDROP IOUT =300mA VO (NOM) = 1.5V 910 1220 mV Line Regulation ΔV LNR VIN=VOUT +100mV to 5.5V , IOUT = 1mA 0.1 0.28 %/V IOUT = 1mA to 150mA 0.35 Load Regulation (Note 5) ΔV LDR IOUT = 1mA to 300mA 2 % Power Supply Rejection Ratio PSRR IOUT = 30mA CBYP = 10nF, f = 120HZ 57 dB Output Voltage Temperature Coeffi- cient Δ V O/ Δ T I OUT = 50mA, TJ = 25°C to 125°C 30 ppm/°C COUT = 1µF, IOUT = 150mA, CBYP =1nF 52 COUT = 1µF, IOUT = 150mA, CBYP =10nF 35 COUT = 1µF, IOUT = 150mA, CBYP = 100nF 30 Output V oltage Noise (10Hz to 100kHz) (SS8014-18) en V IN=V OUT +1V COUT = 1µF, IOUT = 1mA, CBYP = 10nF 26 µVRMS SHUTDOWN VIH Regulator enabled VIN - 0.7 SHDN Input Threshold VIL Regulator shutdown 0.4 V SHDN Input Bias Current ISHDN V SHDN = VIN TA = +25°C 0.003 0.1 Shutdown Supply Current IQ SHDN V OUT = 0V TA = +25°C 1 µA THERMAL PROTECTION Thermal Shutdown Temperature TSHDN 150 °C Thermal Shutdown Hysteresis ΔT SHDN 15 °C

www.SiliconStandard.com 3 of 10 1/12/2005 Rev.2.10 SS8014-xxG Typical Performance Characteristics (VIN = V O+1V, CIN=1µF, COUT=1µF, V SHDN = VIN, SS8014-33, TA =25°C, unless otherwise noted.) 100 150 200 250 300 350 400 0 1 2 3 4 5 6 Input Voltage (V) Supply Current (µA) ILOAD=300mA ILOAD=50mA ILOAD=0mA 100 150 200 250 300 350 400 0 50 100 150 200 250 300 Load Current (mA) Ground Current (µA) VIN=3.6V No Load 3.240 3.250 3.260 3.270 3.280 3.290 3.300 3.310 3.320 3.330 3.340 0 50 100 150 200 250 300 Load Current (mA) Output Voltage (V) SS8014-33 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5 6 Input Voltage (V) Output Voltage (V) No Load 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 Loading (mA) Dropout Voltage (mV) SS8014-18 SS8014-15 TA=25°C Top to down SS8014-27 SS8014-28 SS8014-30 SS8014-33 SS8014-29 Dropout Voltage vs. Load Current Ouptut Noise 10HZ to 100KHZ Output Voltage vs. Input Voltage Supply Current vs. Input Voltage Output Voltage vs. Load Current Ground Current vs. Load Current Note 1: Limits are 100% production tested at T A= +25°C. Low duty pulse techniques are used during test to main tain junction temperature as close to ambient as possible. Note 2: VIN (min)=VOUT (STD)+VDROPOUT Note 3: Not tested. For design purposes, the current limit should be considered 400mA minimum to 600m A max i- mum. Note 4: The dropout voltage is defined as (V IN - VOUT) when VOUT is 100m V below the value of V OUT for VIN = VOUT +1V. For the performance of e ach SS8014-xx version, see “Typical Performance Characteristics”. Note 5: Regulation is measured at constant junction tempera ture using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 1mA to 300mA. Changes in output due to heating effects are cov ered by the thermal regulation specification. SS8014-25

www.SiliconStandard.com 4 of 10 1/12/2005 Rev.2.10 SS8014-xxG Typical Performance Characteristics (continued) -1.00 -0.60 -0.20 0.20 0.60 1.00 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 10 Junction Temperature TJ (°C) Shutdown Supply Current(µA) SS8014-33 VIN = 4.3V 3.24 3.26 3.28 3.30 3.32 3.34 3.36 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 10 Junction Temperature TJ (°C) Output Voltage (V) VIN=4.3V VIN=3.4V 100 150 200 250 300 350 400 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 10 Junction Temperature T J (°C) Dropout Voltage (mV) SS8014-33 ILOAD=150mA ILOAD=50mA SS8014-33 ILOAD =1mA ILOAD =0mA 100 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 10 Junction Temperature TJ (°C) Ground Current (µA) SS8014-33 VIN = 4.3V IOUT =0A -0.20 -0.10 0.00 0.10 0.20 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 10 Junction Temperature TJ (°C) SHDN Input Bias Current (µA) SS8014-33 VIN=4.3V VSHDN=VIN VIN=5.5V Ground Current vs. Temperature SHDN Input Bias Current vs. Temperature Shutdown Supply Current vs. Temperature Output Voltage vs. Temperature Dropout Voltage vs. Temperature

www.SiliconStandard.com 5 of 10 1/12/2005 Rev.2.10 SS8014-xxG Typical Performance Characteristics (continued) 0.001 0.01 0.1 Bypass Capacitance (µF) Output Noise (µVrms) 1 10 100 1000 Load Current (mA) Output Noise (µVrms) SS8014-18 VIN=2.8V TA=25°C SS8014-18 VIN=2.8V TA=25 COUT=1µFCOUT=1µF 0.1 1 10 100 Frequency(KHZ) Power Supply Rejection Ratio(db) SS8014-29 VIN=5V +2V(p-p) RL=100O CBYP=10nF Line Transient Load Transient Power Supply Rejection Ripple Load Transient Output Noise vs. Bypass Capacitance Output Noise vs. Load Current

www.SiliconStandard.com 6 of 10 1/12/2005 Rev.2.10 SS8014-xxG Typical Performance Characteristics (continued) 100 1000 10000 100000 0.1 1 10 100 Bypass Capactor (nF) Time (µs) Rise Time Propagation Delay Time SS8014-33 ILOAD =150mA CIN=COUT=1µF VIN=4.3V power already VSHDN=0 to 4.3V 100 1000 0.1 1 10 100 Bypass Capacitor (nF) Time (µs) Fall Time Propagation Delay Time SS8014-33 ILOAD =150mA CIN=COUT=1µF VIN=4.3V power already VSHDN=4.3V to 0V Power On Response Waveform Turn-On Time vs. Bypass Capacitance Shutdown Delay WaveformShutdown Delay Waveform Turn-Off Time vs. Bypass Capacitance Power Off Response Waveform

to maximize thermal dissipation. 5 OUT Regulator Output. Sources up to 150mA. Bypass with a 1µF, < 0.2Ω typical ESR capacitor to GND. The block diagram of the SS8014-xx is shown in Figure 1. temperature protection circuit. connected to the non-inverting input of the error amplifier. Figure 1. Functional Diagram

www.SiliconStandard.com 8 of 10 SS8014-xxG Over Current Protection The SS8014 uses a current mirror to monitor the output current. A small portion of the PMOS output transistor’s current is mirrored onto a resistor such that the voltage across this resistor is proportional to the output current. This voltage is compared against the 1.25V reference. Once the output current exceeds the limit, the PMOS output transistor is turned off. Once the output transistor is turned off, the current monitoring voltage decreases to zero, and the output PMOS is turned on again. If the over current condition persist, the over current prote ction cir- cuit will be triggered again. Thus, when the output is shorted to ground, the output current will be alterna ting between 0 and the over current limit. The typical over current limit of the SS8014 is set to 350mA. Note that the input bypass capacitor of 1µF must be used in this case to filter out the input voltage spike caused by the surge current due to the inductive effect of the package pin and the printed circuit board’s routing wire. Otherwise, the actual voltage at the IN pin may exceed the absolute maximum rating. Over Temperature Protection To prevent abnormal temperature from occurring, the SS8014 has a built-in temperature monitoring circuit. When it detects the temperature is above 150 oC, the output transistor is turned off. When the IC is cooled down to below 135 oC, the output is turned on again. In this way, the SS8014 will be protected against abnor- mal junction temperature during operation. Shutdown Mode When the SHDN pin is connected a logic low voltage, the SS8014 enters shutdown mode. All the analog cir- cuits are turned off completely, which reduces the current consumption to only the leakage current. The ou tput is disconnected from the input. When the output has no load at all, the output voltage will be di scharged to ground through the internal resistor voltage divider. Operating Region and Power Dissipation Since the SS8014 is a linear regulator, its power dissi- pation is always given by P = IOUT (VIN – V OUT). The maximum power dissipation is given by: PDMAX = (TJ – T A)/ Θ JA = (150-25) / 240 = 520mW where (TJ – TA) is the temperature difference between the SS8014 die and the ambient air, and θ JA, is the thermal resistance of the chosen package to the ambient air. For surface mount devices, heat sinking is accomplished by using the heat spreading capabilities of the PC board and its copper traces. In the case of a SOT23-5 package, the thermal resistance is typ ically 240 oC/Watt. (See Re c- ommended Minimum Footprint) [Figure 2]. Refer to Fi g- ure 3 for the SS8014 valid operating region (Safe Op- erating Area) & refer to Figure 4 for the maximum power dissipation of the SOT-23-5. The die attachment area of the SS8014’s lead frame is connected to pin 2, which is the GND pin. Therefore, the GND pin of SS8014 can carry away the heat of the SS8014 die very effectively. To improve the power dissipation, connect the GND pin to ground using a large ground plane near the GND pin. Applications Information Capacitor Selection and Regulator Stability Normally, use a 1µF capacitor on the input and a 1µF capacitor on the output of the SS8014. Larger input capacitor values and lower ESR provide better su p- ply-noise rejection and transient response. A higher - value input capacitor (10µF) may be necessary if large, fast transients are anticipated and the device is located several inches from the power source. For stable opera- tion over the full temperature range, with load currents up to 120mA, a minimum of 1µF is recommended. Power-Supply Re jection and Operation from Sources Other than Batteries The SS8014 is designed to deliver low dropout volt- ages and low quiescent currents in battery powered sys- tems. Power-supply rejection is 57dB at low fr equencies as the frequency increases above 20 kHz ; t he ou tput capacitor is the major contributor to the rejection of power-supply noise. When operating from sources other than batteries, im- prove supply-noise rejection and transient response by increasing the values of the input and output capacitors, and using passive filtering techniques. Load Transient Considerations The SS8014 load-transient response graphs show two components of the output response: a DC shift of the output voltage due to the different load currents, and the transient response. Typical overshoot for step changes in the load current from 0mA to 100mA is 12mV. Increasing the output capacitor's value and decreasing its ESR at- tenuates transient spikes. Input-Output (Dropout) Voltage A regulator's minimum input-output voltage differential (or dropout voltage) determines the lowest usable supply voltage. In battery-powered systems, this will determine the useful end -of-life battery voltage. Because the SS8014 uses a P-channel MOSFET pass transistor, the dropout voltage is a function of R DS(ON) multiplied by the load current. 1/12/2005 Rev.2.10

www.SiliconStandard.com 10 of 10 SS8014-xxG Physical Dimensions Note: 1. Package body sizes exclude mold flash protrusions or gate burrs 2. Tolerance ±0.1000 mm (4mil) unless otherwise specified 3. Coplanarity: 0.1000mm 4. Dimension L is measured in gage plane DIMENSIONS IN MILLIMETERS SYMBOLS MIN NOM MAX A 1.00 1.10 1.30 A1 0.00 ----- 0.10 A2 0.70 0.80 0.90 b 0.35 0.40 0.50 C 0.10 0.15 0.25 D 2.70 2.90 3.10 E 1.40 1.60 1.80 H 2.60 2.80 3.00 ?1 1º 5º 9º Tape/package orientation E e D H θ 1 L C b A E e D H θ 1 L C b A SOT23-5 package orientation Feed Direction Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 1/12/2005 Rev.2.10