SS6611G

SS6610G SSC | Alldatasheet

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Technical content

www.SiliconStandard.com 1 of 16 High efficiency boost converter Output current up to 500mA No external diode required PRODUCT SUMMARY DESCRIPTION High-efficiency Synchronous Step-up DC/DC Converter SS6610/11G 4/21/2006 Rev.3.01 Quiescent supply current of 20mA. Power-saving shutdown mode (0.1µA typical). Internal synchronous rectifier On-chip low-battery detector. Low battery hysteresis

APPLICATIONS

Palmtop and notebook computers. PDAs Wireless phones Pocket organizers. Digital cameras. Hand-held devices with 1 to 3 cells of NiMH/NiCd batteries. The SS6610/11G are high-efficiency step-up DC/DC converters, with a start-up voltage as low as 0.8V, and an operating voltage down to 0.7V. Consuming only 20µA of quiescent current, these devices include a built-in synchronous rec- tifier that reduces size and cost by eliminating the need for an external Schottky diode, and improves overall efficiency by minimizing losses. The switching frequency can range up to 500KHz depending on the load and input volt- age. The output voltage can be easily set by: 1) two external resistors for 1.8V to 5.5V; 2) connecting FB to OUT to get 3.3V; or 3) connecting FB to GND to get 5.0V. The peak current of the internal switch is fixed at 1A (SS6610G) or 0.65A (SS6611G) for design flexibility. TYPICAL APPLICATION CIRCUIT Output 3.3V, 5.0V or adjustable from 1.8V to 5.5V up to 300mA output Low-battery Detect Out SS6610G SS6611G OUT FBGNDREF LBO SHDN LX LBI ON OFF Low Battery Detection 0.1µF VIN 22µH 47µF 47µF Pb-free, RoHS compliant MSOP-8

FEATURES

www.SiliconStandard.com 2 of 16 SS6610/11G 4/21/2006 Rev.3.01 ORDERING INFORMATION PIN CONFIGURATION SS6610GO TR SS6611GO TR MSOP-8 TOP V IEW GND OUT LBI LBO REF LX SHDN FB Example: SS6610GO TR Æ SS6610 in RoHS-compliant MSOP-8 package, shipped on tape and reel Packing TR: Tape and reel Package type GO: RoHS-compliant MSOP-8 ABSOLUTE MAXIMUM RATINGS Supply voltage (OUT to GND) 8.0V Switch voltage (LX to GND) VOUT+ 0.3V , LBO to GND 6.0V LBI, REF, FB, to GND VOUT+0.3V Switch current (LX) -1.5A to +1.5A Output current (OUT) -1.5A to +1.5A Operating temperature range -40°C ~ +85°C Storage temperature range -65°C ~150°C TEST CIRCUIT Refer to the typical application circuit on page 1. SHDN

www.SiliconStandard.com 3 of 16 SS6610/11G 4/21/2006 Rev.3.01

ELECTRICAL CHARACTERISTICS

(VIN = 2.0V, VOUT = 3.3V (FB = VOUT),RL = ¥ , unless otherwise specified.) PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Minimum input voltage 0.7 V Ope rating voltage 1.1 5.5 V Start-up voltage R L=3kΩ (Note1) 0.8 1.1 V Start-up voltage temp. coeff. -2 mV/°C Output voltage range V IN<VOUT 1.8 5.5 Output voltage FB = VOUT 3.17 3.3 3.43 V SS6610G 300 350 FB=OUT (VOUT =3.3V) SS6611G 150 300 SS6610G 180 230 Steady-state output current (Note 2) FB=GND (VOUT =5.0V) SS6611G 90 160 mA Refe ren ce voltage I REF= 0 1.199 1.23 1.261 V Reference voltage temp. coeff. 0.024 mV/°C Refe ren ce load regulation IREF = 0 to 100µA 10 30 mV Refe ren ce line regulation V OUT = 1.8V to 5.5V 5 10 mV/V FB , LBI input threshold 1.199 1.23 1.261 V Internal swit ch on-resistance I LX = 100mA 0.3 0.6 Ω SS6610G 0.80 1.0 1.25 LX switch current limit SS6611G 0.50 0.65 0.85 A LX leakage current V LX=0V~4V; VOUT=5.5V 0.05 1 µA Ope rating current into OUT (Note 3) VFB = 1.4V , VOUT = 3.3V 20 35 µA Shutdown current into OUT SHDN = GND 0.1 1 µA VOUT= 3.3V ,ILOAD = 200mA 90 Efficiency VOUT = 2V ,ILOAD = 1mA 85

www.SiliconStandard.com 4 of 16 SS6610/11G 4/21/2006 Rev.3.01 ELECTRICAL CHARACTERISTICS (Continued) PAR AME TER TEST COND ITIONS MIN. TYP. MAX. UN IT LX switch on-time V FB =1V , VOUT = 3.3V 2 4 7 µs LX switch off-time V FB =1V , VOUT = 3.3V 0.6 0.9 1.4 µs FB input current V FB = 1.4V 0.03 50 nA LBI input current V LBI = 1.4V 1 50 nA SHDN input current V SHDN = 0 or VOUT 0.07 50 nA LBO low output voltage V LBI = 0, ISINK = 1mA 0.2 0.4 µA LBO off leakage current V LBO = 5.5V, VLBI = 5.5V 0.07 1 mA LBI hystereisis 50 mV VIL 0.2VOUT SHDN input voltage VIH 0.8V OUT V Note 1: Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the input and output. Note 2: Steady-state output current indicates that the device maintains output voltage regulation under load. Note 3: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual battery supply.

www.SiliconStandard.com 5 of 16 SS6610/11G 4/21/2006 Rev.3.01 TYPICAL PERFORMANCE CHARACTERISTICS Input Battery Current (µA) Input battery voltage (V) Fig. 1 No-Load Battery Current vs. Input Battery 100 120 140 160 VOUT=5V (FB=GND) VOUT=3.3V (FB=OUT) Shutdown Current (µA) Supply Voltage (V) Fig. 2 Shutdown Current vs. Supply Voltage 0.1 0.2 0.3 0.4 0.5 Fig. 3 Start-Up Voltage vs. Output Current Start-Up Voltage (V) 0.01 0.1 1 10 1000.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VOUT=5.0V (FB=GND) Output Current (mA) VOUT=3.3V (FB=OUT) Fig. 4 Turning Point between CCM & DCM CCM/DCM Boundary Output Current (mA) Input Voltage (V) 100 150 200 250 300 350 400 VOUT=5.0V (FB=GND) VOUT=3.3V (FB=OUT) L=22µH CIN=100µF COUT=100µF Fig. 5 Efficiency vs. Load Current (ref. to Fig.33) Efficiency (%) 0.01 0.1 1 10 100 10000 100 VIN=3.6V Output Current (mA) VIN=2.4V VIN=1.2V SS6610 (I LIMIT =1A) VOUT=5.0V (FB=GND) Fig. 6 Ripple Voltage (ref. to Fig.33) Ripple Voltage (mV) Output Current (mA) 0 50 100 150 200 250 300 350 400 450 500 550 600 650 100 120 140 160 180 200 220 VIN=2.4V VIN=1.2V VOUT=5.0V L=22µH CIN=47µF COUT=47µF VIN=3.6V SS6610 (I LIMIT =1A)

www.SiliconStandard.com 6 of 16 SS6610/11G 4/21/2006 Rev.3.01 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Fig. 7 Ripple Voltage (ref. to Fig.33) Ripple Voltage (mV) Output Current (mA) 0 100 200 300 400 500 600 700 800 120 160 200 240 VIN=2.4V VOUT=5.0V L=22µH CIN=100µF COUT=100µF VIN=3.6V VIN=1.2V SS6610 (ILIMIT =1A) Fig. 8 Efficiency vs. Load Current (ref. to Fig.33) Efficiency (%) Output Current (mA) 0.01 0.1 1 10 100 1000 100 VIN=3.6V VIN=1.2V VIN=2.4V SS6611 (ILIMIT =0.65A) VOUT=5.0V (FB=GND) Fig. 9 Ripple Voltage (ref. to Fig.33) Ripple Voltage (mV) Output Current (mA) 0 50 100 150 200 250 300 350 400 450 500 550 100 120 140 160 VOUT=5.0V L=22µH CIN=47µF COUT=47µF VIN=3.6V VIN=2.4V VIN=1.2V SS6611 (ILIMIT =0.65A) Fig. 10 Ripple Voltage (ref. to Fig.33) Ripple Voltage (mV) Output Current (mA) 0 100 200 300 400 500 600 100 120 VIN=2.4V VIN=1.2V VOUT=5.0V L=22µH CIN=100µF COUT=100µF VIN=3.6V SS6611 (ILIMIT =0.65A) Fig. 11 Efficiency vs. Load Current (ref. to Fig.32) (V) Efficiency (%) Output Current (mA) 0.01 0.1 1 10 100 1000 100 VIN=2.4V VIN=1.2V SS6610 (ILIMIT =1A) VOUT=3.3V (FB=OUT) Fig. 12 Ripple Voltage (ref. to Fig.32) Ripple Voltage (mV) Output Current (mA) 0 50 100 150 200 250 300 350 400 450 500 550 600 100 120 140 160 180 200 220 240 260 VIN=1.2V VOUT=3.3V L=22µH CIN=47µF COUT=47µF VIN=2.4V SS6610 (ILIMIT =1A)

www.SiliconStandard.com 7 of 16 SS6610/11G 4/21/2006 Rev.3.01 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Fig. 13 Ripple Voltage (ref. to Fig.32) Ripple Voltage (mV) Output Current (mA) 0 50 100 150 200 250 300 350 400 450 500 550 100 120 140 VOUT=3.3V CIN=100µF COUT=100µF VIN=1.2V VIN=2.4V SS6610 (ILIMIT =1A) SS6610 (ILIMIT =1A) Fig. 14 Efficiency vs. Load Current (ref. to Fig.32) Efficiency (%) Output Current (mA) 0.01 1 10 100 1000 100 VIN=1.2V VIN=2.4V SS6611 (ILIMIT =0.65A) VOUT=3.3V (FB=OUT) Fig. 15 Ripple Voltage (ref. to Fig.32) Ripple Voltage (mV) Output Current (mA) 0 50 100 150 200 250 300 350 400 450 500 100 120 140 VOUT=3.3V L=22µH CIN=47µF COUT=47µF VIN=1.2V VIN=2.4V SS6611 (ILIMIT =0.65A) Fig. 16 Ripple Voltage (ref. to Fig.32) Ripple Voltage (mV) Output Current (mA) 0 50 100 150 200 250 300 350 400 450 500 100 110 120 VOUT=3.3V L=22µH CIN=100µF COUT=100µF VIN=1.2V VIN=2.4V SS6611 (ILIMIT =0.65A) Fig. 17 Reference Voltage vs. Temperature Reference Voltage (V) Temperature (°C) -40 -20 0 20 40 60 80 1.20 1.21 1.22 1.23 1.24 1.25 1.26 IREF=0 Fig. 18 Switch Resistance vs. Temperature Resistance (Ω) Temperature (°C) -60 -40 -20 0 20 40 60 80 100 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 P-Channel N-Channel VOUT=3.3V ILX=100mA

www.SiliconStandard.com 8 of 16 SS6610/11G 4/21/2006 Rev.3.01 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Fig. 19 Maximum Output Current vs. Input Voltage Maximum Output Current (mA) 100 200 300 400 500 600 700 800 Input Voltage (V) SS6611 (ILIMIT=0.65A) SS6610 (ILIMIT=1A) VOUT=3.3V (FB=OUT) Input Voltage (V) Fig. 20 Maximum Output Current vs. Input Voltage Maximum Output Current (mA) 100 200 300 400 500 600 700 800 900 SS6611 (ILIMIT=0.65A) SS6610 (ILIMIT=1A) VOUT=5.0V (FB=GND) Fig. 21 Inductor Current vs. Output Voltage ILIM (A) Output Voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 SS6610 (ILIMIT=1A) SS6611 (ILIMIT=0.65A) Supply Voltage (V) Fig. 22 Switching Frequency vs. Supply Voltage Switching Frequency fosc (KHz) 100 120 140 160 IOUT=100mA VOUT=5.0V VOUT=3.3V Switching Frequency Fosc (KHz) Output Current (mA) 1 10 100 1000 100 120 140 160 180 200 220 VIN=2.4V VOUT=3.3V VIN=1.2V VOUT=3.3V VIN=2.4V VOUT=5V VIN=3.6V VOUT=5V Fig. 23 Switching Frequency vs. Output Current VIN=2.4V VOUT=3.3V Fig. 24 LX Switching Waveform

www.SiliconStandard.com 9 of 16 SS6610/11G 4/21/2006 Rev.3.01 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) VIN=2.4V VOUT=3.3V Loading=200mA LX Pin Waveform Inductor Current VOUT AC Couple Fig. 25 Heavy Load Waveform Loading: 1mA ↔ 200mA VIN=2.4V VOUT=3.3V VOUT: AC Couple Fig. 26 Load Transient Response VIN=2.0V~3.0V VOUT=3.3V, IOUT=100mA VOUT Fig. 27 Line Transient Response VIN Fig. 28 Exiting Shutdown VOUT VSHDN VOUT=3.3V CIN=COUT=47µF Fig. 29 Exiting Shutdown VSHDN VOUT VOUT=3.3V CIN=COUT=100µF Fig. 30 Exiting Shutdown VSHDN VOUT VOUT=5.0V CIN=COUT=47µF

www.SiliconStandard.com 10 of 16 SS6610/11G 4/21/2006 Rev.3.01 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Fig. 31 Exiting Shutdown VOUT VSHDN VOUT=5.0V CIN=COUT=100µF BLOCK DIAGRAM 47µF 47µF 0.1µF VIN OUT L 47µH LX FB REF GND OUT 0.1µF LBO LBI SHDN F/ F Q R S Reference Voltage MirrorMax. On-Time One Shot Minimum Off-Time One Shot

www.SiliconStandard.com 11 of 16 SS6610/11G 4/21/2006 Rev.3.01 PIN DESCRIPTIONS PIN 1: FB Connect to pin 8:OUT to get +3.3V output, connect to pin 6:GND to get +5.0V output, or use a resistor network to set the output voltage between +1.8V and +5.5V. PIN 2: LBI Low-battery co mparator input. Internally set at +1.23V to trip. PIN 3: LBO Open-drain low-battery comparator output. Output is low when V LBI is <1.23V. LBO is high-impedance during shutdown. PIN 4: REF 1.23V reference voltage. Bypass with a 0.1µF capacitor. PIN 5: SHDN Shutdown input. High = operating, low = shutdown. PIN 6: GND Ground PIN 7: LX N-channel and P-channel power MOSFET drain. PIN 8: OUT Power output. OUT provides the bootstrap power to the IC.

APPLICATION INFORMATION

The SS6610/11 series are high-efficiency, step-up DC/DC converters, featuring a built-in synchronous rectifier, which reduces size and cost by eliminating the need for an external Schottky diode. The start-up voltage of the SS6610 and SS6611 is as low as 0.8V and they operate with an input voltage down to 0.7V. Quiescent supply current is only 20 µA. The internal P-MOSFET on-resistance is typically 0.3 Ω to improve overall efficiency by minimizing AC losses. The output voltage can be easily set using two external resistors for 1.8V to 5.5V; connecting FB to OUT to get 3.3V; or connecting to GND to get 5.0V. The peak current of the internal switch is fixed at 1.0A (SS6610) or 0.65A (SS6611) for design flexibility. The current limits of the SS6610 and SS6611 are 1.0A and 0.65A respectively. The lower current limit allows the use of a physically smaller inductor in space-sensitive applications. PFM Control Scheme A key feature of the SS6610 series is a unique minimum-off-time, constant-on-time, current-limited, pulse-frequency-modulation (PFM) control scheme (see BLOCK DIAGRAM) with ultra-low quiescent current. The peak current of the internal N-MOSFET power switch can be fixed at 1.0A (SS6610) or 0.65A (SS6611). The switch frequency depends on either loading conditions or input voltage, and can range up to 500KHz. It is governed by a pair of one- shots that set a minimum off-time (1 µs) and a maximum on-time (4µs). Synchronous Rectification Using the internal synchronous rectifier eliminates the need for an external Schottky diode, reducing the cost and board space. During the cycle of off- time, the P-MOSFET turns on and shuts the N- MOSFET off. Due to the low turn-on resistance of the MOSFET, the synchronous rectifier signif- cantly improves efficiency without an additional ex- ternal Schottky diode. Thus, the conversion effi- ciency can be as high as 93%. Reference Voltage The reference voltage (REF) is nominally 1.23V for excellent T.C. performance. In addition, the REF pin can source up to 100 µA to an external circuit with good load regulation (<10mV). A bypass capacitor of 0.1 µF is required for proper operation and good performance.

www.SiliconStandard.com 12 of 16 SS6610/11G 4/21/2006 Rev.3.01 Shutdown The whole circuit is shutdown when SHDNV is low. In shutdown mode, the current can flow from the battery to the output due to the body diode of the P-MOSFET. VOUTfalls to approximately (Vin - 0.6V) and LX remains high impedance. The capacitance and load at OUT de- termine the rate at which V OUT decays. Shutdown can be pulled as high as 6V. Regardless of the volt- age at OUT. Selecting the Output Voltage VOUT can be simply set to 3.3V/5.0V by connecting the FB pin to OUT/GND due to the use of an internal resis- tor divider in the IC (Fig.32 and Fig.33). In order to adjust output voltage, a resistor divider is connected to V OUT, FB, GND (Fig.34). Vout can be calculated by the following equation: where V REF =1.23V and VOUT ranges from 1.8V to 5.5V. The recommended R6 is 240kΩ. Low-Battery Detection The SS6610 series contains an on-chip comparator with 50mV internal hysteresis (REF, REF+50mV) for low battery detection. If the voltage at LBI falls below the internal reference voltage, LBO ( an open-drain out- put) sinks current to GND. Component Selection 1. Inductor Selection An inductor value of 22µH performs well in most applications. The SS6610 series also work with inductors in the 10µH to 47µH range. An inductor with higher peak inductor current creates a higher output voltage ripple (I PEAK X output filter capaci- tor ESR). The inductor’s DC resistance signifi- cantly affects efficiency. We can calculate the maximum output current as follows: −−= L2 VVtIV VI INOUT OFFLIM OUT IN )MAX(OUT where I OUT(MAX)=maximum output current in amps VIN=input voltage L=inductor value in µH h =efficiency (typically 0.9) tOFF=LX switch’ off-time in µs ILIM=1.0A or 0.65A 2. Capacitor Selection The output ripple voltage is related to the peak inductor current and the output capacitor ESR. Besides output ripple voltage, the output ripple current may also be of concern. A filter capacitor with low ESR is helpful to the efficiency and the steady state output current of the SS6610 series. Therefore a NIPPON MCM Series tantalum capacitor of 100µF/6V is recommended. A smaller capacitor (down to 47 μF with higher ESR) is ac- ceptable for light loads or in applications that can tolerate higher output ripple. 3. PCB Layout and Grounding Since the SS6610/11’s switching frequency can range up to 500kHz, the SS6610/11 can be very sensitive. Careful printed circuit layout is im- portant for minimizing ground bounce and noise. The OUT pin should be as clear as possible, and the GND pin should be placed close to the ground plane. Keep the IC’s GND pin and the ground leads of the input and output filter capaci- tors less than 0.2in (5mm) apart. In addition, keep all connections to the FB and LX pins as short as possible. In particular, when using ex- ternal feedback resistors, locate them as close to the FB pin as possible. To maximize output power and efficiency, and minimize output ripple voltage, use a ground plane and solder the IC’s GND di- rectly to the ground plane. Fig. 35 to 37 are the recommended layout diagrams.

www.SiliconStandard.com 13 of 16 SS6610/11G 4/21/2006 Rev.3.01 Ripple Voltage Reduction Two or three parallel output capacitors can sig- nificantly improve the output ripple voltage of the SS6610/11. The addition of an extra input capacitor results in a stable output voltage. Fig.38 shows the application circuit with the above features. Figures 39 to 46 show the performance of the circuit in Figure 38. APPLICATION EXAMPLES VOUT VIN 100KΩ SS6610/11 L 22µH 47µF 47µF0.1µF 0.1µF C4 LOW BATTERY OUTPUT LX OUT FBGND REF LBI LBO SHDN L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER VOUT VIN 100KΩ SS6610/11 47µF 47µF0.1µF 0.1µF C4 LOW BATTERY OUTPUT OUT FBGND REF LBI LBO SHDN L 22µH LX L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER VOUT VIN 100KΩ 47µF 47µF0.1µF 0.1µF LOW BATTERY OUTPUT SS6610/11 R6 R5 R2 SHDN LX FB LBO GND REF LBI OUT L 22µH L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER VOUT=VREF*(1+R5/R6) Fig. 34 An Adjustable Output Application Circuit

www.SiliconStandard.com 14 of 16 SS6610/11G 4/21/2006 Rev.3.01 R3 R4 100K VIN LBI LBO VIN R5=0Ω, R6=open; for VOUT=3.3V R5=open, R6=0Ω; for VOUT=5.0V VOUT=1.23(1+R5/R6); for adjustable output voltage L1 22µH 100µF 0.1µF 10k 100µF 0.1µF FB1 LBI2 LBO3 REF4 SHDN 5 GND 6 LX 7 OUT 8 SS6610/11C4 100nF VOUT ShutDown 100µF 100µF 100µF L1: TDK SLF7045T-22OMR90 C1~C2, C6~8: NIPPON Tantalum Capacitor 6MCM107MCTER Fig. 38 SS6610/11 application circuit with small ripple voltage. Fig. 39 Effi ciency (ref. to Fig.38) Efficiency (%) Output Current (mA) 0.01 0.1 1 10 100 1000 100 VOUT=5.0V L=22µH VIN=1.2V VIN=2.4V VIN=3.6V SS6610 (ILIMIT =1A) Fig. 40 Ripple Voltage (ref. to Fig.38) Ripple Voltage (mV) Output Current (mA) 0 100 200 300 400 500 600 700 VOUT=5.0V L=22µH VIN=2.4V VIN=3.6V VIN=1.2V SS6610 (ILIMIT =1A) IIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII

www.SiliconStandard.com 15 of 16 SS6610/11G 4/21/2006 Rev.3.01 Fig. 41 Efficiency (ref. to Fig.38) Efficiency (%) Output Current (mA) 0.01 0.1 1 10 100 1000 VOUT=5.0V L=22mH VIN=2.4V VIN=3.6V VIN=1.2V SS6611 (ILIMIT =0.65A) Fig. 42 Ripple Voltage (ref. to Fig.38) Ripple Voltage (mV) Output Current (mA) 0 100 200 300 400 500 VOUT=5.0V L=22µH VIN=2.4V VIN=3.6V VIN=1.2V SS6611 (ILIMIT =0.65A) Fig. 43 Efficiency (ref. to Fig.38) Efficiency (%) Output Current (mA) 0.01 0.1 1 10 100 1000 100 VIN=2.4V VIN=1.2V VOUT=3.3V L=22µH SS6610 (ILIMIT =1A) Fig. 44 Ripple Voltage (ref. to Fig.38) Ripple Voltage (mV) Output Current (mA) 0 50 100 150 200 250 300 350 400 450 500 550 600 VIN=2.4V VIN=1.2V VOUT=3.3V L=22µH SS6610 (ILIMIT =1A) Fig. 45 Efficiency (ref. to Fig.38) Efficiency (%) Output Current (mA) 0.01 0.1 1 10 100 1000 100 VOUT=3.3V L=22µH VIN=2.4V VIN=1.2V SS6611 (ILIMIT =0.65A) Fig. 46 Ripple Voltage (ref. to Fig.38) Ripple Voltage (mV) Output Current (mA) 0 50 100 150 200 250 300 350 400 VOUT=3.3V L=22µH VIN=2.4V VIN=1.2V SS6611 (ILIMIT =0.65A)

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. www.SiliconStandard.com 16 of 16 SS6610/11G 4/21/2006 Rev.3.01 PHYSICAL DIMENSIONS

8 LEAD MSOP

A1 -- 0.20 A2 0.76 0.97 b 0.28 0.38 C 0.13 0.23 D 2.90 3.10 E 4.80 5.00 E1 2.90 3.10 e 0.65 L 0.40 0.66 D E e b C L PART MARKING PACKING: Moisture sensitivity level MSL3 3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB). Dimensions do not include mold protrusions. SSSYM Date/lot code: M = month (1-9,A,B,C) SSS = lot code sequence 1610PO All dimensions in millimeters. SS6610G = 1610PO, SS6611G = 1611PO