SS6563

SS6563 SSC | Alldatasheet

Document overview

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Technical content

www.SiliconStandard.com 1 of 10 SS6563 Versatile DC/DC Converter

FEATURES

Operates from 3V to 30V input voltage Internal 2A peak current switch. Continuous output current of 1.5A Bootstrapped driver. High-side current sense capability. High efficiency (up to 90%). Internal ±2% reference. Low quiescent current at 1.6mA. Operating frequency from 100Hz to 100KHz.

APPLICATIONS

Constant Current Source for Battery Chargers. Saver for Cellular phones. Step-Down DC/DC Converter Module.

DESCRIPTION

The SS6563 is a monolithic control circuit that provides the primary functions required for DC to DC converters and high-side -sensed co nstant current sources. The device consists of an inter- nal te mperature compensated reference, co m- parator, co ntrolled duty -cycle oscillator with an active cu rrent-sense circuit, bootstrapped driver, and hig h-current output switch. This device is specifically designed to construct a constant cu r- rent source for battery chargers with a min imum number of exte rnal components. A bootstrapped driver can drive the NPN output switch to satur a- tion for higher efficiency and less heat dissipation. The SS6563 can deliver 1.5A continuous cu rrent without requiring a heat sink. TYPICAL APPLICATION CIRCUIT + C3 1µF 470µF + C1 100µF 1000pF 470 RB 2.2M RS 0.22 RA 390K 1N5819 1N4148 300µH SS6563 5 4 BOOST FB GND IS DC DE CF VCC + C4 5V/1A 8V~25V VIN When VIN>15V make R1=1K 1N4148 Line Regulation VIN = 10V~20V @ IO=1A 40mV Load Regulation VIN = 15V, @ IO=100mA~1A 20mV Short Circuit Current VIN =15V, @ RL = 0.1Ω 1.3A Step-Down Converter Rev.2.02 4/06/2004

www.SiliconStandard.com 2 of 10 SS6563 ORDERING INFORMATION PIN CONFIGURATION Example: SS6563CSTR à in SO-8 package shipped in tape and reel PDIP-8, SO-8 TOP VIEW VCC BOOST DE CF GND IS FB DC 1 SS6563-CXXX Packing TR: Tape and reel TB: Tubes Package type N: PDIP-8 (only available in tubes) S: SO-8 ABSOLUTE MAXIMUM RATINGS Power Dissipation and Thermal Characteristics Rev.2.02 4/06/2004

www.SiliconStandard.com 3 of 10 SS6563 TEST CIRCUIT BOOST SS6563 5 4 1 DC IS DE CF GND FB VCC R 1 1 K CT 1nF Current Source VCC 1.275V VCC 50mA Current Source 4.55V @VCC=5V 4.75V 2V/0V IDISCHG/ ICHG 1.225V ELECTRICAL CHARACTERISTICS (VCC= 5V, TA=25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Oscillator Charging Current 5.0V≤ VCC≤ 30V ICHG 10 25 40 µA Discharge Current 5.0V≤ VCC≤ 30V IDISCHG 100 150 200 µA Voltage Swing PIN 3 VOSC 0.6 V Discharge to Charge Cur- rent Ratio VIS =VCC IDISCHG / ICHG 6.0 Current Limit Sense Voltage ICHG=IDISCHG VCC – VIS 250 300 350 mV Output Switch Saturation Voltage, Emitter Follower Connection IDE=1.0A; VBOOST =VDC = VCC VCE(SAT) 1.5 1.8 V Saturation Voltage IDC=1.0A; IBOOST =50mA, (Forced β≅ 20) VCE (SAT) 0.4 0.7 V DC Current Gain ISC =1.0A; VCE=5.0V hFE 35 120 Collector Off-State Current VCE=30V IC(OFF) 10 nA Rev.2.02 4 /06/2004

www.SiliconStandard.com 4 of 10 SS6563 ELECTRICAL CHARACTERISTICS (VCC= 5V, TA=25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Comparator Threshold Voltage TA=25°C 0°C ≤ TA ≤ 70°C VFB 1.225 1.21 1.25 1.275 1.29 V V Threshold Voltage Line Regulation 3.0V≤ VCC≤ 30V REGLINE 0.1 0.3 mV/V Input Bias Current VIN=0V IIB 0.4 1 µA Supply Current VIS =VCC, pin 5>VFB 5.0V≤ VCC ≤ 30V CT=1nF PIN 2=GND Remaining pins open ICC 1.6 3 mA TYPICAL PERFORMANCE CHARACTERISTICS CT, Oscillator Timing Capacitor (nF) tON-OFF, Output Switch ON-OFF Time (µS) Fig. 1 Output Switch ON-OFF Time vs. Oscillator Timing Capacitor 0.1 1 10 100 1 10 100 1000 OFF-TIME ON -TIME VCC=5V VIS =VCC PIN 5=GND Fig. 2 Standby Supply Current vs. Supply Voltage VCC, Supply Voltage (V) ICC, Supply Current (mA) 0 5 10 15 20 25 30 0.4 0.8 1.2 1.6 CT = 1nF VIS = VCC PIN 2 =GND Rev.2.02 4 /06/2004

www.SiliconStandard.com 5 of 10 SS6563 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) VFB, Threshold Voltage (V) Temperature (°C) Fig. 3 VFB, Threshold Voltage vs. Temperature 1.2 1.22 1.24 1.26 1.28 1.3 0 10 20 30 40 50 60 70 80 VCC = 5V, CT = 1nF, PIN 2 = GND VCC-VIS Threshold Voltage (mV) Temperature (°C) Fig. 4 IS Threshold Voltage vs. Temperature 250 260 270 280 290 300 0 10 20 30 40 50 60 70 80 VCC = 5V, CT = 1nF, PIN 2 = GND 310 320 330 340 350 Fig. 5 Emitter Follower Configuration Output Switch Saturation Voltage vs. Emitter Current IE, Emitter Current (A) 1.2 1.3 1.4 1.5 1.6 1.7 1.8VCE(SAT), Saturation Voltage (V) 0 0.5 1 1.5 VCC = 5V PIN 1, 7, 8 = VCC PIN 3, 5 = GND Fig. 6 Common Emitter Configuration Output Switch Saturation Voltage vs. Collector Current IC, Collector Current (A) VCE(SAT), Saturation Voltage (V) 0 0.5 1 1.50 0.2 0.4 0.6 0.8 VCC = 5V PIN 7 = VCC PIN 2, 3, 5 = GND Forced Beta = 20 BLOCK DIAGRAM Q R S BOOST IS VCC FBGND CF DC DE Oscillator IsCT Comparator +1.25V Reference Voltage Rev.2.02 4 /06/2004

www.SiliconStandard.com 6 of 10 SS6563 PIN DESCRIPTIONS PIN 1: DC - The collector of the switch - 2A. PIN 2: DE - Darlington switch emitter. PIN 3: CF - Oscillator timing capacitor. PIN 4: GND - Power ground. PIN 5: FB - Feedback comparator inverting input. PIN 6: VCC - Power supply input. PIN 7: IS - Highside current sense input. VCC - VIS=300mV. PIN 8: BOOST - Bootstrapped driver collector.

APPLICATION INFORMATION

CALCULATION STEP-DOWN STEP-UP t t ON OFF V + V V - V - V OUT F IN(MIN) SAT OUT V + V V V - V OUT F IN(MIN) IN(MIN) SAT (tON + tOFF) MAX 1 FMIN FMIN CT 4x10 tON 4 x 10 tON IC (SWITCH) 2IOUT(MAX) 2IOUT(MAX) ( )t + t t ON OFF OFF RS 0.3/IC(SW ITCH) 0.3/ IC (SWITCH) L(MIN) ( )V - V - V I t IN(MIN) SAT OUT C(SWITCH) ON(MAX) ( )V - V I t IN(MIN) SAT C(SWITCH) ON(MAX) Co I (t + t C( SWITCH) ON OFF RIPPLE ( P - P ) ) I t V OUT ON RIPPLE(P - P) VSAT = Saturation voltage of the output switch. VF = Forward voltage of the ringback rectifier The following power supply charact eristics must be chosen: VIN - Nominal input voltage. VOUT - Desired output voltage, VOUT = 1.25 (1 + RB/RA) IOUT - Desired output current. FMIN - Minimum desired switching frequency at selected values for VIN and IOUT. VRIPPLE (P-P) - Desired peak-to-peak output ripple voltage. In practice, the calculated value will need to be increased due to the capacitor equivalent series resistance and board l ay- out. The r ipple voltage should be kept to a low value since it will directly affect the line and load regulation. Rev.2.02 4 /06/2004

www.SiliconStandard.com 7 of 10 SS6563 APPLICATION EXAMPLES PEAK VBT DIS VTS VCC ADJ 6 SEL3 7 TMR 8 MODE 9 SEL2 10 SEL1 11 GND 12 LED1 13 LED2 14 ICON 15 DSW 16 SS6781 300K 91K R10 100K 4.7µF 0.1µF C10 47nF R15 680 270 R2 20/5W SW1 PB SW R12 100K R16 680 R17 680 R14 200K 0.1µF C11 100µF RX R11 100K RY 0.1µF R13 470K MMBT2222A 50K LED2 GREEN LED3 RED LED1 YELLOW MPS2222A 220µF 0.1µF C12 1µF C13 10µF R5 120/0.5W BAT1 BATTERY THERMISTOR VIN 11~15V 220µH C2 1µF 470P RS 0.3/1W GND 4 FB VCC DC DE CF 6 IS BOOST SS6563 + C3 220µF 390K IN4148 IN4148 D2 IN5819 1N5819 VIN VOUT GND U3 78L05 3~5 NiMH/NiCd cells. Note: Charge Current=0.3/RS Ampere Safety Timer: 80min Fig. 1 Battery Charger Circuit for Fluctuating Charging Current Applications BOOST IS DC DE CF GND *RS VIN L 220µH 1N4148 R B 33K 1N5819 CO 1N5821 1µF CT 470pF RA 5.6K 220µF SS6563 10µF *IO=300mV/RS IO 120 220µF VCC FB (%) Io (A) 0 0.5 1 1.5 2 100 VIN= 16 V, VO= 8V VIN= 16 V, VO= 12 V Efficiency vs Output Current Fig. 2 Battery Charge Circuit Rev.2.02 4/06/2004

www.SiliconStandard.com 8 of 10 SS6563 APPLICATION EXAMPLES (Continued) 16V~25V 1µF 470µF + C1 100µF 470pF RB 13K RA RS 0.22 1N5819 1N5819 300µH SS6563 5 4 BOOST FB GND IS DC DE CF VCC 12V/1A VIN Fig. 3 Step-Down Converter with External 5V Bootstrap BOOST SS6563 IS 5 4 FB VCC 200µH RB 47K RA 2K2 C 1 CT 680pF RS 0.22 VOUT VIN 28V/200mA 1N5819 100µF 220µF 150 DC DE GND CF 8~16V Line Regulation VIN = 8V~16V @ IO=200mA 100mV Load Regulation VIN = 12V, @ IO=80mA~200mA 40mV Fig. 4 Step-Up Converter Rev.2.02 4 /06/2004

www.SiliconStandard.com 9 of 10 SS6563 APPLICATION EXAMPLES (Continued) BOOST IS 5 4 FB VCC DC DE CF GND VOUT VIN CT RB RS L RA Fig. 5 Step-Up Converter with External NPN Switch 1N5819 100µH RA 8.2K 953 RB CT RS 0.26 5 4 CF GND 100µF VOUT -12V/100mA VIN 4.5V~6V 560pF 470µF DC DE VCC FB BOOST IS Line Regulation VIN = 4.5V~6V @ IO=100mA 20mV Load Regulation VIN = 5V, @ IO=10mA~100mA 100mV Fig. 6 Inverting Converter SS6563 SS6563 Rev.2.02 4 /06/2004

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infri ngement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. PHYSICAL DIMENSIONS

8 LEAD PLASTIC SO (unit: mm)

A 1.35 1.75 A1 0.10 0.25 B 0.33 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27(TYP) H 5.80 6.20 L 0.40 1.27 D H e A B C E L

8 LEAD PLASTIC DIP (unit: mm)

A1 0.381 — A2 2.92 4.96 b 0.35 0.56 C 0.20 0.36 D 9.01 10.16 E 7.62 8.26 E1 6.09 7.12 e 2.54 (TYP) eB — 10.92 b e L eB E C D L 2.92 3.81 www.SiliconStandard.com 10 of 10 SS6563 Rev.2.02 4/06/2004