SS5P9_11 VISHAY | Alldatasheet

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SS5P9, SS5P10 www.vishay.com Vishay General Semiconductor Revision: 28-Jun-11 1 Document Number: 88984 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Barrier Rectifiers TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application.

FEATURES

  • Very low profile - typical height of 1.1 mm
  • Ideal for automated placement
  • Guardring for overvoltage protection
  • Low forward voltage drop, low power losses
  • High efficiency
  • Low thermal resistance
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 90 V, 100 V IFSM 150 A VF at IF = 5.0 A 0.649 V IR 4.5 μA TJ max. 150 °C TO-277A (SMPC) Anode 1 Anode 2Cathode K K eSMP ® Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS5P9 SS5P10 UNIT Device marking code S59 S510 Maximum repetitive peak reverse voltage V RRM 90 100 V Maximum average forward rectified current (fig. 1) I F(AV) 5.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load I FSM 150 A Non-repetitive avalanche energy at I AS = 2.0 A, TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range T J, TSTG - 55 to + 150 °C

SS5P9, SS5P10 www.vishay.com Vishay General Semiconductor Revision: 28-Jun-11 2 Document Number: 88984 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Note (1) Units mounted on recommended PCB 1 oz. pad layout Note (1) Automotive grade ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage I F = 2.5 A TA = 25 °C VF (1) 0.708 - VIF = 5.0 A 0.832 0.88 IF = 2.5 A TA = 125 °C 0.571 - IF = 5.0 A 0.649 0.68 Reverse current Rated V R TA = 25 °C IR (2) 4.5 15 μA TA = 125 °C 2.7 5 mA Typical junction capacitance 4.0 V, 1 MHz C J 130 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL SS5P3 SS5P4 UNIT Typical thermal resistance RJA (1) 65 °C/W RJL 3 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS5P10-M3/86A 0.10 86A 1500 7" diam eter plastic tape and reel SS5P10-M3/87A 0.10 87A 6500 13" diam eter plastic tape and reel SS5P10HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS5P10HM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel

SS5P9, SS5P10 www.vishay.com Vishay General Semiconductor Revision: 28-Jun-11 3 Document Number: 88984 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance 1.0 2.0 3.0 4.0 5.0 6.0 80 90 100 110 120 130 140 150 Average Forward Re ctified C urrent (A) Lead Temperature (°C) Resistive or Inductive Load TL measured at the Cathode Band Terminal 0123456 D = 0.1 D = 0.2 D = 1.0 Average Forward Current (A) Average Power Loss (W) D = tp/T t p T 0.01 0.1 100 TA = 150 °C TA = 125 °C TA = 25 °C Instantaneous Forward Voltage (V) Instantaneo us Forward C urrent (A) 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Instantaneo us Reverse C urrent (mA) TA = 150 °C TA = 125 °C TA = 25 °C 100 1000 0.1 1 10 100 Reverse Voltage (V) Junction Capaci tance (pF) 0.01 0.1 1 10 100 100 t - Pulse Duration (s) Transient Thermal Impedance (°C/W) Junction to Ambient

SS5P9, SS5P10 www.vishay.com Vishay General Semiconductor Revision: 28-Jun-11 4 Document Number: 88984 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Conform to JEDEC TO-277A TO-277A (SMPC) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) NOM. 0.084 (2.13) NOM. 0.155 (3.94) NOM. Mounting Pad Layout 0.268 (6.80) 0.186 (4.72) MIN. 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. 0.189 (4.80) MIN. 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.171 (4.35) 0.167 (4.25) K

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