SS52BF_V01 YFWDIODE | Alldatasheet
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1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 5 A
FEATURES
Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMBF Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 57mg / 0.00 2oz Pinning 1.Cathode 2.Anode 1 2 SMBF Absolute Maximum Ratings and Electrical characteristics Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbols SS52BF SS54BF SS56BF SS58BF SS510BF SS512BF SS515BF SS520BF Units Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current IF(AV) 5.0 A Peak Forward Surge Current, 8.3ms Single Half Sine- wave Superimposed On Rated Load (JEDEC method) IFSM 150 A Maximum Instantaneous Forward Voltage at 5 A VF 0.55 0.70 0.85 0.95 V Maximum Instantaneous Reverse Current TA = 25°C at Rated DC Reverse Voltage TA = 100°C IR 1.0 50 mA Typical Junction Capacitance （1） Cj 800 500 pF Typical Thermal Resistance （2） RθJA 45 °C/W Operating Junction Temperature Range Tj -55 ~ +150 °C Storage Temperature Range Tstg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C Marking Code SS52BF S52B SS54BF S54B SS56BF S56B SS58BF S58B SS510BF S510B SS512BF S512B SS515BF S515B SS520BF S520B
2 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ /W）°C t, Pulse Duration（sec） 0.1 1 10 0.1 0 0.5 1.0 1.5 2.0 SS52BF/SS54BF SS56BF/SS58BF SS510BF/SS520BF 0.1 10 100 500 1001 1000 T =25J °C SS54F/SS520F SS52BF/SS54BF SS56BF-SS520BF Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 4.0 5.0 6.0 0.0 25 50 75 100 125 Average Forward Current (A) Case Temperature (°C) 150 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 125 175 150 100
3 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Tape/Reel,13”reelSMBF SMBF 5000 Package Outline Plastic surface mounted package; 2leads The recommended mounting pad size Summary of Packing Options Package Packing Description Packing Quantity Industry Standard EIA-481-1 A C ∠ALL ROUND V AM e UNIT mm max min mil max min A C D E HE ∠ 2.2 1.9 e Bottom View HE g Top View 1.0 g g ∠ALL ROUND E D A E pad pad 51 10 173 146 216 43 7 165 138 200 Unit：mm(mil) 3.0(118)1.8(71) 2.54(100) 1.8(71)