SS5817 SEMTECH_ELEC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- Plastic package has Underwriters Laboratory Classification 94V-0
- Metal silicon junction, majority carrier conduction
- For surface mount applications
- Guard ring for overvoltage protection
- Low power loss, high efficiency
- High current capability, Low forward voltage drop
- High surge capability Mechanical Data
- Case: SMA (DO-214AC) molded plastic case
- Terminals: Solder plate, solderable per MIL-STD -750, method 2026
- Polarity: Color band denotes cathode end
- Mounting Position: Any Maximum Ratings and Electrical Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, for capacitive load, derate by 20% Parameter Symbols SS5817 SS5818 SS5819 Units Maximum Repetitive Peak Reverse Voltage V RRM 20 30 40 V Maximum RMS Voltage V RMS 14 21 28 V Maximum DC Blocking Voltage V DC 20 30 40 V Maximum Average Forward Rectified Current 0.375" (9.5 mm) Load Length at TL = 90 OC I(AV) 1 A Peak Forward Surge Current 8.3mS Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) at TL = 70 OC IFSM 25 A Maximum Instantaneous Forward Voltage at 1 A V F 0.45 0.55 0.6 V at TA = 25 OC 0.5 mA Maximum Instantaneous Reverse Current at Rated DC Blocking Voltage at TA =100 OC IR 10 mA Typical Junction Capacitance 1) C J 110 pF Typical Thermal Resistance 2) RθJA 88 OC/W Operating and Storage Temperature Range T J ,TS - 65 to + 125 OC 1) Measured at 1 MHz and reverse voltage of 4 volts.
Dated : 01/07/2008 J SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) SS5817 THRU SS5819