SS52F SAMYANG | Alldatasheet

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Technical content

Surface Mount Schottky Barrier Rectifier Reverse Vo ltage - 20 to 200V Forward Current - 5.0A

FEATURES

  • Metal silicon junction, majority carrier conduction
  • For surface mounted applications
  • Low power loss, high ef ficiency
  • High forward surge current capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Absolute Maximum Ratings and Electrical characteristics Ratings at ambient t emperat ure unless ot herwise specif ied. Single phase, h alf wave, 6 0Hz resist ive or induct ive load, for capacit ive load, d erate by 20 % 25 °C PINNING PIN

DESCRIPTION

Marking Code: SS52 — SS520 Simplified outline SMAF and symbol MECHANICAL D ATA pprox. W eight:

  • Case: SMAF
  • Terminals: Solderable per MIL-STD-750, Method 2026
  • A 27mg / 0.00095oz Maximum DC Blocking Vo ltage Parameter Maximum Repetitive Peak Reverse Vo ltage Maximum RMS voltage Maximum Average Forward Rectified Current Typical Junction Capacitance 20 40 V 14 28 V V 5.0 -55 ~ +150 A A V mA pF Units 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Vo ltage at 5 A Maximum DC Reverse Current at Rated DC Reverse Vo ltage Operating Junction T emperature Range S S52F SS54F SS56F S S58F SS510F SS512F SS515F SS520F T = 25 °Ca T =100 °Ca VRRM VRMS VDC IF(AV) IFSM VF IR Cj Tj Symbols TstgStorage T emperature Range 100 100 0.55 0.70 0.85 700 -55 ~ +150 °C 120 120 150 105 150 200 140 200 1.0 500 50Typical Thermal Resistance RθJA °C/W 150 70 84 0.45 1 2 （1） （2） 175 Measured at 1 MHz and applied reverse voltage of 4 V D.C （2） （1） SAM YANG SS52F --- SS520FSAMYANG ELECTRONICS 1 - 3 www.diode.co.kr All d ata sheet.com

Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Vo ltage （%） 100 10 0 101 10 2 10 3 10 4 T =75J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Vo ltage (V) Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 4.0 5.0 6.0 0.0 25 50 75 100 125 Average Forward Current (A) 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance （ /W）°C t, Pulse Duration （sec） 0.1 1 1010 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine W ave (JEDEC Method) 0.1 0 0.5 1.0 1.5 2.0 SS52F SS54F SS56F/SS58F SS510F/SS520F 0.1 10 100 500 1001 1000 T =25J °C SS54F/SS520F SS52F/SS54F SS56F-SS520F 125 180 Case Temperature ( °C) 150 150 100 175 SS52F~SS58F SS510F~SS520F 2 - 3 www.diode.co.kr SAM YANG SS52F --- SS520FSAMYANG ELECTRONICS All d ata sheet.com

Plastic surface mounted package; 2 leads SMAF A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ∠ALL ROUND E D A E pad pad The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ：mm (mil) SAM YANG SS52F --- SS520FSAMYANG ELECTRONICS 3 - 3 www.diode.co.kr All d ata sheet.com