SS52F GXELECTRONICS | Alldatasheet

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Technical content

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A

FEATURES

  • Metal silicon junction, majority carrier conduction
  • For surface mounted applications
  • Low power loss, high efficiency
  • High forward surge current capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C MECHANICAL DATA pprox. Weight:
  • Case: SMAF
  • Terminals: Solderable per MIL-STD-750, Method 2026
  • A 27mg 0.00086oz Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current 1）Typical Junction Capacitance 20 40 V 14 28 V V 5.0 -55 ~ +125 A A V mA pF Units 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SS52F SS54F SS56F SS58F SS510F SS512F SS515F SS520F T = 25°Ca T =100°Ca VRRM VRMS VDC IF(AV) IFSM VF IR Cj Tj Symbols TstgStorage Temperature Range 100 100 0.55 0.70 0.85 800 -55 ~ +150 °C 120 120 150 105 150 200 140 200 1.0 500 2） 55Typical Thermal Resistance RθJA °C/W 1） Measured at 1MHz and applied reverse voltage of 4 V D.C. 150 70 84 0.45 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM 0.179(4.40) 0.199(5.05) 0.150(3.80) 0.035(0.90) Dimensions in inches and (millimeters) SMAF Cathode Band Top View 0.128(3.25) 0.110(2.80) 0.094(2.40) 0.051(1.30) 0.059(1.50) 0.055(1.40) 0.012(0.30) 0.006(0.15) 0.047(1.20) 0.028(0.70)

Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 4.0 5.0 6.0 0.0 25 50 75 100 125 150 Average Forward Current (A) Ambient Temperature (°C) SS54F/SS520F 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ /W）°C t, Pulse Duration（sec） 0.1 1 10 200 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 100 SS54F~SS520F Single phase half-wave 60 Hz resistive or inductive load 7.0 100LFM 0.01 0 0.4 1.4 0.1 1.0 SS52F SS54F SS56F/SS58F SS510F/SS520F 0.1 10 100 200 500 1001 SS54F/SS520F T =25J °C 1000 SS52F/SS54F SS56F-SS520F T =25J °C SS52F THRU SS520F Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM