SS52C BILIN | Alldatasheet
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FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified SS54C SS55C SS56C S2C S4C S5C S6C Maximum recurrent peak reverse voltage V RRM 40 50 60 V Maximum RMS voltage V RWS 28 35 42 V Maximum DC blocking voltage V DC 40 50 60 V Maximum average forw ord rectified current at c TL(SEE FIG.1) (NOTE 2) I(AV) A Peak forw ard surge current 8.3ms single half- sine-w ave superimposed on rated load(JEDEC c Method) I FSM A Maximum instantaneous forw ard voltage at v 5.0A(NOTE.1) VF V Maximum DC reverse current @TA=25℃ at rated DC blockjing voltage(NOTE1) @TA=100℃ RθJA RθJL Operating junction and storage temperature range T STG ℃ Storage temperature range T J ℃ 0.5 IR NOTE: 1.Pulse test:300μS pulse width,1%duty cycle SS52C- - -SS56C REVERSE VOLTAGE: 20 --- 60 V CURRENT: 5.0 A ◇ Built-in strain relief ◇ Case:JEDEC DO-214AB,molded plastic over 1111passivated chip Device marking code ◇ Low power loss,high effciency ◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
Typical thermal resitance (NOTE2) ℃ /W SS53C ◇ High temperature soldering guaranteed:250 oC/10 1 11 seconds at terminals SS52C ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.007 ounces, 0.21 gram mA UNITS DO - 214AB(SMC) ◇ Low profile package ◇ For surface mounted applications 14 21 ◇ Terminals:Solder Plated, solderable per MIL-STD-750, 1111Method 2026 ◇ High current capability,low forward voltage drop 175 5.0 ◇ For use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ◇ Guardring for overvoltage protection S3C GALAXY ELECTRICAL -65--- +150 0.55 0.70 20 10 ◇ Metal silicon junction, majority carrier conduction ◇ High surge capability www.galaxycn.com BL Document Number 0281012 BLGALAXY ELECTRICAL 1. inch(mm) BARRIER RECTIFIERS SURFACE MOUNT SCHOTTKY
BLGALAXY ELECTRICALDocument Number 0281012 2. Resistive or inductive Load 2.0 4.0 60 70 80 90 100 110 120 130 140 150 160 6.0
8.0 SS52C-SS54C
P.C.B.MOUNTED ON COPPERPAD AREAS 0.01 0.1 10.0 30.0 1.6 TJ=125 C TJ=150 C TJ=25 C Puise Width=300 S 1%DUTY CYCLE SS52C-SS54C SS55C-SS56C O O O TJ=125 C TJ=25 C TJ=75 C SS52C-SS54C SS55C-SS56C 0.001 0.01 0.1 200 4 06 08 0 1 0 0 TJ=25 C f=1.0MHz Vsig=50mVp-p SS52C-SS54C SS55C-SS56C O 1000 100 1000.1 1.0 10 0.1 0.1 1 100 100 0.01 www.galaxycn.com AVERAGE FORWARD RECTIFIED CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES REVERSE VOLTAGE,VOLTS PULSE DURATION,SEC FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.6-- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE ℃/ W JUNCTION CAPACLTANCE pF NUMBER OF CYCLES AT 60HZ INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,％ AMBIENT TEMPERATURE ℃ RATINGS AND CHARACTERISTIC CURVES SS52C- - -SS56C FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2-- PEAK FORWARD SURGE CURRENT 200 0 15 10 125 100 150 175 50 100 TJ=TJMAX. 8.3ms Single Half Sine-Wave (JEDEC Method)