SS52BF_V01 CHENDA | Alldatasheet
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Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss,high efficiency High forward surge current capability For use in low voltage,high frequency inverters, free wheeling,and polarity protection applicatlons Dimensions in inches and (millimeters) Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere SMBF 0.216(5.50) 0.200(5.10) 0.048(1.20) 0.031(0.80) 0.010(0.26) 0.007(0.18) 0.051(1.30) 0.043(1.10) 0.173(4.40) 0.165(4.20) 0.086 (2.20) 0.075 (1.90) 0.146(3.70) 138(3.50) Mechanical Data Case: JEDEC 60B) molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.002 ounce, 0.057 grams Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum Ratings And Electrical Characteristics Parameter SYMBOLS SS52BF SS53BF SS54BF SS55BF SS56BF SS58BF SS510 BF SS5150BF SS520 0BF UNITSMarking Code MDD SS52BF MDD SS53BF MDD SS54BF MDD SS55BF MDD SS56BF MDD SS58BF MDD SS510BF MDD SS5150BF MDD SS5200BF Maximum repetitive peak reverse voltage VRMM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current at TL(see fig.1) I(AV) 5.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 150 A Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 1.0 mA50.0 Typical junction capacitance (NOTE 1) CJ 800 500 pF Typical thermal resistance (NOTE 2) RJA 40.0 ℃/W Operating junction temperature range TJ - 5 5t o+ 1 2 5 ℃ Storage temperature range TSTG - 5 5t o+ 1 5 0 ℃ 3.The typical data above is for reference only.
Rev:2019A0 Page :2 Typical Characterisitics The curve above is for reference only. https://www.microdiode.com SS52BF THRU SS5200BF Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μ A) 20 40 60 800 TJ=25°C TJ=100°C Percent of Rated Peak Reverse Voltage（%） 100 10 0 101 10 2 10 3 10 4 TJ=75°C Fig.4 Typical Junction Capacitance Junction Capacitance (pF) Reverse Voltage (V) Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ °C/W） t, Pulse Duration（sec） 0.1 1 10 0.1 0 0.5 1.0 1.5 2.0 SS52BF SS54BF SS56BF/SS58BF SS510BF/SS5200BF 0.1 10 100 500 1001 1000 TJ=25°C SS52BF-SS54BF SS56BF-SS5200BF Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 4.0 5.0 6.0 0.0 25 50 75 100 125 Average Forward Current (A) 100LFM Single phase half wave resistive or inductive P.C.B mounted on 2.0×2.0"(5×5cm) pad areas Lead Temperature (°C) 150 100 Fig.5 Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 125 175 150 100
https://www.microdiode.com Rev:2019A0 Page :3 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). Suggested Pad Layout 0.118 0.260 Symbol Unit (mm) A C D 0.071 6.6 3.0 E B Unit (inch) 0.189 1.8 0.1002.54 E B d F W PA D D1D2 C T Item Tolerance SMBF Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width P E B C d F T W P A D D Symbol 0.1 0.1 0.1 min 0.5 0.1 0.3 1.0 0.1 0.05 0.1 0.1 0.1 0.1 2.0 unit:mm 1 . 50 330.00 50.00 13.00 1.75 5.50 4.00 4.00 2.00 0.30 12.00 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 3.81 5.61 .60 Reel packing SMBF 13" 5,000 4.0 10,000 190*190*41 330 365*365* 360 80,000 14.0 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(mm)(mm)(mm)(pcs)(mm)(pcs) 4.8 12.30W1Reel width SS52BF THRU SS5200BF Reverse Voltage - 20 to 200 Volts Forward Current - 5.0 Ampere