SS52F_V01 YFWDIODE | Alldatasheet
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1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 5 A
FEATURES
Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMAF Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 27mg / 0.000 95oz Pinning 1.Cathode 2.Anode 1 2 SMAF Absolute Maximum Ratings and Electrical characteristics Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbols SS52F SS54F SS56F SS58F SS510F SS512F SS515F SS520F Units Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current IF(AV) 5.0 A Peak Forward Surge Current, 8.3ms Single Half Sine- wave Superimposed On Rated Load (JEDEC method) IFSM 175 150 A Maximum Instantaneous Forward Voltage at 5 A VF 0.45 0.55 0.70 0.85 V Maximum Instantaneous Reverse Current TA = 25°C at Rated DC Reverse Voltage TA = 100°C IR 1.0 50 mA Typical Junction Capacitance（1） Cj 700 500 pF Typical Thermal Resistance （2） RθJA 50 °C/W Operating Junction Temperature Range Tj -55 ~ +150 °C Storage Temperature Range Tstg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C Marking Code SS52F SS52 SS54F SS54 SS56F SS56 SS58F SS58 SS510F SS510 SS512F SS512 SS515F SS515 SS520F SS520
2 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 4.0 5.0 6.0 0.0 25 50 75 100 125 Average Forward Current (A) 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ /W）°C t, Pulse Duration（sec） 0.1 1 1010 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 0.1 0 0.5 1.0 1.5 2.0 SS52F SS54F SS56F/SS58F SS510F/SS520F 0.1 10 100 500 1001 1000 T =25J °C SS54F/SS520F SS52F/SS54F SS56F-SS520F 125 180 Case Temperature (°C) 150 150 100 175 SS52F~SS58F SS510F~SS520F
3 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Tape/Reel,13”reel 10000 SMAF SMAF Package Outline Plastic surface mounted package; 2leads The recommended mounting pad size Summary of Packing Options Package Packing Description Packing Quantity Industry Standard EIA-481-1 Tape/Reel,7”reel 3000 EIA-481-1 A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ∠ALL ROUND E D A E pad pad 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ：mm (mil)