SS52BF GXELECTRONICS | Alldatasheet
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Technical content
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A
FEATURES
- Metal silicon junction, majority carrier conduction
- For surface mounted applications
- Low power loss, high efficiency
- High forward surge current capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C MECHANICAL DATA pprox. Weight: 57
- Case: SMBF
- Terminals: Solderable per MIL-STD-750, Method 2026
- A mg / 0.002oz Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current Typical Junction Capacitance 20 40 V 14 28 V V 5.0 -55 ~ +125 A A V mA pF Units 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SS52BF SS54BF SS56BF SS58BF SS510BF SS512BF SS515BF SS520BF T = 25°Ca T =100°Ca VRRM VRMS VDC IF(AV) IFSM VF IR Cj Tj Symbols TstgStorage Temperature Range 100 100 0.55 0.70 0.85 800 -55 ~ +150 °C 120 120 150 105 150 200 140 200 1.0 500 2） 40Typical Thermal Resistance RθJA °C/W 150 70 84 0.45 1） Measured at 1MHz and applied reverse voltage of 4 V D.C. SS52BF THRU SS520BF SMBF 0.201(5.10) 0.217(5.50) 0.166(4.20) 0.174(4.40) 0.137(3.50) 0.145(3.70) 0.075(1.90) 0.087(2.20) Dimensions in inches and (millimeters) Cathode Band Top View 0.055(1.40) 0.043(1.10) 0.012(0.30) 0.006(0.15) 0.047(1.20) 0.028(0.70) 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM
Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ /W）°C t, Pulse Duration（sec） 0.1 1 10 0.1 0 0.5 1.0 1.5 2.0 SS52BF SS54BF SS56BF/SS58BF SS510BF/SS520BF 0.1 10 100 500 1001 1000 T =25J °C SS54F/SS520F SS52BF/SS54BF SS56BF-SS520BF Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 4.0 5.0 6.0 0.0 25 50 75 100 125 Average Forward Current (A) 100LFM Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7 ) ×12.7mm pad areas Lead Temperature (°C) 150 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 125 175 150 100 Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A SS52BF THRU SS520BF 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM