SS52-SMC HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
H igh Diode Semiconductor SS52 THRU SS520 Electrical Characteristics (T =25℃ Unless otherwise specified） Item Symbol Unit Test Conditions SS5 2 3 4 5 6 8 10 15 20 Repetitive Peak Reverse Voltage V RRM V 20 30 40 50 60 80 100 150 200 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, TL(Fig.1) 5.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 150 Junction Temperature T J Storage Temperature T STG ℃ -65 ~ +150 a Item Symbol Unit Test Condition SS5 Peak Forward Voltage V F V I F =5.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ I RRM2 Ta =100℃ 20 10 Thermal Resistance(Typical) R θJ-A W Between junction and ambient 55 R θJ-L Between junction and terminal 17 2 3 4 5 6 8 10 15 20 0.55 0.85 0.7 0.5 V 14 21 28 35 42 56 70 105 140 Maximum RMS V RMS Voltage 0.95 0.2 Limiting Values (Absolute Maximum Rating)
H igh Diode Semiconductor Characteristics(Typical) 0 25 50 75 100 125 150 175 150 120 0.01 0.1 1 10 100 100 0.1 t,PULSE DURATION,sec. FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG. 1- FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERESINSTANTANEOUS FORWARD CURRENT,AMPERES £PEAK FORWARD SURGE CURRENT, AMPERES INSTANTANEOUS FORWARD VOLEAGE, VOLTS Single Phase Half Wave 60Hz Resistive or inductive Load 1 10 100 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0.01 0.1 TJ=25 C PULSE WIDTH=300 ms 1%DUTY CYCLE TRANSIENT THERMAL IMPEDANCE, C/W AMBIENT TEMPERATURE, C SS55-SS520 SS52-SS54 SS55-SS56 SS52-SS54 SS58-SS510 0.1 1.0 10 100 REVERSE VOLTAGE,VOLTS FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF TJ=25 C 100 1000 2000 SS55-SS520 SS52-SS54 SS515-SS520 0 20 40 60 80 100 1,00 0.1 0.01 0.001 TJ=25 C TJ=100 C PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES TJ=75 C
0.108 (2.75) 0.123 (3.25) 0.256(6.50) 0.280(7.10) 0.217(5.50) 0.240(6.10) 0.087(2.2) 0.106(2.7) 0.035(0.90) 0.055(1.40) 0.291(7.40) 0.331(8.40) 0.012(0.30) 0.007(0.17) 0.008(0.203)MAX. Dimensions in inches and (millimeters) Package Outline Dimensions SMC Suggested Pad Layout SMC 6.5 3.5 1.8 JSHD JSHD H igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMC H igh Diode Semiconductor