SS52F SEMIPOWER | Alldatasheet
Document overview
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Technical content
Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A
FEATURES
- Metal silicon junction, majority carrier conduction
- For surface mounted applications
- Low power loss, high efficiency
- High forward surge current capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C PINNING PIN
DESCRIPTION
Marking Code: SS52 — SS520 Simplified outline SMAF and symbol MECHANICAL DATA pprox. Weight:
- Case: SMAF
- Terminals: Solderable per MIL-STD-750, Method 2026
- A 27mg / 0.00095oz Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current Typical Junction Capacitance 20 40 V 14 28 V V 5.0 -55 ~ +150 A A V mA pF Units 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SS52F SS54F SS56F SS58F SS510F SS512F SS515F SS520F T = 25°Ca T =100°Ca VRRM VRMS VDC IF(AV) IFSM VF IR Cj Tj Symbols TstgStorage Temperature Range 100 100 0.55 0.70 0.85 700 -55 ~ +150 °C 120 120 150 105 150 200 140 200 1.0 500 50Typical Thermal Resistance RθJA °C/W 150 70 84 0.45 1 2 Page 1 of 3 SS52F THRU SS520F （1） （2） 175 Measured at 1 MHz and applied reverse voltage of 4 V D.C （2） （1） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) Fig.1 Forward Current Derating Curve 1.0 2.0 3.0 4.0 5.0 6.0 0.0 25 50 75 100 125 Average Forward Current (A) 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ /W）°C t, Pulse Duration（sec） 0.1 1 1010 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 0.1 0 0.5 1.0 1.5 2.0 SS52F SS54F SS56F/SS58F SS510F/SS520F 0.1 10 100 500 1001 1000 T =25J °C SS54F/SS520F SS52F/SS54F SS56F-SS520F 125 180 Page 2 of 3 Case Temperature (°C) 150 150 100 175 SS52F~SS58F SS510F~SS520F SS52F THRU SS520F Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
Plastic surface mounted package; 2 leads SMAF A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ∠ALL ROUND E D A E pad pad The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ：mm (mil) SS52F THRU SS520F Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0