SS54A FUTUREWAFER | Alldatasheet

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SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode Maximum Ratings@25°C Unless Otherwise Specified Parameter Symbol Value Units SS54A/B/C SS56A/B/C SS510A/B/C Peak Reverse Current V RRM 40 60 100 V Reverse Current V R Average Forward Current I O 5 A Non-Repetitive Peak Forward Current (tp≤8.3ms) I FSM 120 Operating Temperature T J °C -55 ~ +150 Storage Temperature T STG Maximum Ratings@25°C Unless Otherwise Specified Parameter Symbol Condition Value Units SS54A/B/C SS56A/B/C SS510A/B/C Reverse Leakage Current I R TA = 25°C 0.5 mA TA = 125°C 10 Forward Voltage V F IF = 5.0A 0.50 0.70 0.85 V 5. Electrical Characteristics (TA=25°C) 4. Absolute Maximum Ratings 2. Feature List

  • High Surge Current Capability
  • Low Power Loss, High Efficiency
  • Highly Stable Oxide Passivated Junction
  • Low Forward Voltage Drop 3. Mechanical Characteristics
  • Mold JEDEC Package - SMAJ/SMBJ/SMCJ
  • Packing: Tape and Reel
  • Flammability Rating UL 94V-0
  • Halogen Free
  • JEDEC MSL Classification :Level 1 1. General Description These Devices Employ The Schottky Barrier Principle in a Metal−to−Silicon Power Rectifier. Features Epitaxial Construction With Oxide Passivation and Metal Overlay Contact. Ideally Suited For Low Voltage, High Frequency Switching Power Supplies; Free Wheeling Diodes and Polarity Protection Diodes. SMBJ SMAJ SMCJ

SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode 6. Rating and Characteristic Number of cycles at 60Hz Percent of rated peak reverse voltage(%) Fig 1. Typical Reverse Characteristics Instantaneous Reverse Current (mA) Percent Of Rated Peak Reverse Voltage,VR (%) Fig 5. Maximum Non-Repetitive Forward Surge Current Number of Cycles at 60HZ Peak Forward Surge Current,IFSM(A) Reverse Voltage:VR(V) Capacitance Cj(pf) Fig. 6 VR-CJ Characteristics Fig 3. Typical Transient Thermal Characteristics TM - Mount Temperature (°C) Average For ward Rectified Current (A) T-Pulse Duration (S) Transient Thermal Impedance(°C/W) Fig 4. Maximum Forward Current Derating Curve Fig 2. Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage (V) Instantaneous For ward Current (A) SS54 SS56-510 SS54 SS54 SS56-510 SS56-510 TJ=25°C TJ=25°C TJ=75°C TJ=75°C TJ=125°C TJ=125°C SS54,TJ=125°C SS54,TJ=25°C SS56,TJ=125°C SS56,TJ=25°C SS510,TJ=25°C SS54 SS510 SS56 f=1MHZ

SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode 7. Soldering Parameters

SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode 9. Suggest Pad Layout-SMAJ Unit:mm Unit:mm 8. Dimensions and Packing-SMAJ SMAJ Dim Min Max A 4.75 5.25 B 2.55 2.85 C 2.00 2.50 D 0.85 1.55 E 1.35 1.65 F - 0.40 G 4.25 4.55 H 0.15 0.30 Dimensions Value (in mm) C 4.00 G 1.50 X 2.50 X1 6.50 Y 1.70

SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode 11. Suggest Pad Layout-SMBJ Dimension Value C 4.30 G 1.80 X 2.50 X1 6.80 Y 2.30 Unit:mm Unit:mm 10. Dimensions and Packing-SMBJ SMBJ Dim Min Max A 2.00 2.60 A1 0.05 0.20 b 1.85 2.20 c 0.15 0.31 D 3.30 3.94 E 5.00 5.59 E1 4.05 4.75 L 0.76 1.52

SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode 13. Suggest Pad Layout-SMCJ Unit:mm Unit:mm 12. Dimensions and Packing-SMCJ SMCJ (DO-214AB) Dim Min Max A 5.85 6.15 B 6.75 7.05 C 2.80 3.10 D 0.10 0.20 E 7.65 8.15 G 0.04 0.16 H 0.90 1.60 J 2. 05 2.55 Dimensions Value(in mm) C 6.90 G 4.40 X 2.50 X1 9.40 Y 3.30

SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode 14.Taping and Reel Specification Taping Width Tape Orientation 12mm Direction Of Feed 15. Embossed Carrier Tape Specifications Dimension W B1 D D1 E F K P P0 P2 t W Value 12 mm 8.2 Max 1.5+ 0.1/- 1.5 Min. 1.75 ±0.10 5.5 ±0.05 4.5 Max. 8.0 ±0.10 4.0 ±0.10 2.0 ±0.05 0.4 Max. ±0.3 A0 / B0 / Determined by Component Size. The Clearance Between the Component And The Cavity Must Comply to The Rotational And Lateral Movement Requirement Provided in Figures in The “Maximum Component Movement in Tape Pocket” Section.

SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode 16. Surface Mount Reel Specification Dimension Tape Width Reel Size A B C D N G T Value 12 mm 13” 330 2.0 +0.5-0 +0.5-0.2 20.5 ±0.2 100 12.4 +2.0 -0.0 18.4 17. Tape Leader and Trailer Specification

SS52 A / B / C -SS510 A / B / C Document Number:F41806G 09-Aug-21 V 2.1 www.futurewafer.com.tw Schottky Barrier Diode 19. History Version Date File No. Recording Basis A 23-Feb-2018 F41806G New Create Market B 17-Apr-2019 F41806G Update Company Information System V2.1 09-Aug-2021 F41806G Update Version System Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司 Tel ：+886-3-3350161/FAX ：+886-3-3350172 cherry@futurewafer.com.tw No. 286-11, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan 18. Ordering Information Part No. Marking Quantity Package Type Taping SS54A 54A 5,000pcs SMAJ 13” Reel SS56A 56A SS510A 510A SS54B S54 3,000pcs SMBJ SS56B S56 SS510B S110 SS54C SS54 SMCJ SS56C SS56 SS510C SS510