SS22F GXELECTRONICS | Alldatasheet
Document overview
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Technical content
Features
- Metal silicon junction, majority carrier conduction
- For surface mounted applications
- Low power loss, high efficiency
- High forward surge current capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM SMBF 0.201(5.10) 0.217(5.50) 0.166(4.20) 0.174(4.40) 0.137(3.50) 0.145(3.70) 0.075(1.90) 0.087(2.20) Dimensions in inches and (millimeters) Cathode Band Top View 0.055(1.40) 0.043(1.10) 0.012(0.30) 0.006(0.15) 0.047(1.20) 0.028(0.70)
- Terminals: Solderable per MIL-STD-750, Method 2026
- pprox. Weight: 57mg / 0.002oz Case: SMBF A
Fig.4 Typical Junction Capacitance 0.1 Junction Capacitance ( pF) Reverse Voltage (V) 100 200 500 1001 SS22W/SS24W SS26W-SS220W T =25J °C 0.1 0 0.4 1.4 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 1.0 SS22W/SS24W SS26W/SS28W SS210W/SS212W SS215W/SS220W Fig.1 Forward Current Derating Curve 0.5 1.0 1.5 2.0 2.5 3.0 0.0 25 50 75 100 125 150 Average Forward Current (A) Ambient Temperature (°C) Single phase half-wave 60 Hz resistive or inductive load 100LFM 10 1001 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) SS22W-SS28W SS210W-SS220W Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C DS22W/DS24W DS26W-DS220W SS22F THRU SS220F Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM