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! Sc hottk y Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical D ata ! Te rminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified 1 of 2 SS22 – SS2200 0.55 0.70 0. 85 0.90 V 2.0 A 14 21 28 35 42 56 70 105 140 V 20 30 40 50 60 80 100 150 200 V P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L = 75°C IO Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward Vo ltage @I F = 2. 0A V FM Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C IRM 0.5 20 mA T y pical Thermal Resistance (Note 1) R/G01JL R/G01JA 88 °C/W Operati ng Temperature Range Tj -65 to +125 °C St orage Temperature Range TSTG -65 to +150 °C Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Dim Min Max Min Max A 2.29 2.92 3.30 3.94 B 4.00 4.60 4.06 4.57 C 1.27 1.63 1.96 2.21 D 0.15 0.31 0.15 0.31 E 4.80 5.59 5.00 5.59 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 J 2.01 2.62 2.00 2.62 All Dimensions in mm A B C D GH E J SMA SMB W e ight:! SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Alldatasheet
SS22 – SS2200 SS22 – SS2200 0.01 0.1 1.0 0 0.4 0.8 1.2 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F SS22 - SS24 SS25 - SS26 T -25ºCj I Pu lse Width = 300 sF µ 100 1000 0.1 1 10 100 C , JUNCTION CAPACITANCE (pF) j V , REVERSE VOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1 MHz j 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA)R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5T ypical Reverse Characteristics T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 1.0 2.0 25 50 75 100 125 150 I AVERAGE FORWARD CURRENT (A)(AV), T, LEAD TEMPERA TURE (ºC) Fig. 1 Forward Current Derating Curve L SS28 - SS2100 2 of 2 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) T = 100 Cj ° SS2200 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet