SS22 TAYCHIPST | Alldatasheet
Document overview
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Technical content
Features
For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260 o C / 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093gram
2.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings* T A = 25°C unless otherwise noted These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Device mounted on FR-4 PCB 0.013 mm. Symbol Parameter Value Units I O Average Rectified Current .375 " lead length @ T A = 75°C 2.0 A i f(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 50 A P D Total Device Dissipation Derate above 25°C 1.3 W mW/ °C R θJA Thermal Resistance, Junction to Ambient ** 75 °C/W T stg Storage Temperature Range -65 to +150 °C T J Operating Junction Temperature -65 to +125 °C
Electrical Characteristics
T A = 25°C unless otherwise noted Parameter Device Units 22 23 24 25 26 28 29 210 Peak Repetitive Reverse Voltage 20 30 40 50 60 80 90 100 V Maximum RMS Voltage 14 21 28 35 42 56 64 80 V DC Reverse Voltage (Rated V R ) 20 30 40 50 60 80 90 100 V Maximum Reverse Current T A = 25°C (Note 1) @ rated V R T A = 100°C 0.4 mA mA Maximum Forward Voltage @ 2.0 A 500 700 850 mV Note:Pulse Test:Pulse widthÿ300ÿs,Duty:cycleÿ2.0%
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS E-mail: sales@taychipst.com Web Site: www.taychipst.com 20V-100V 2.0A 2 of 2 SS22 THRU SS210 RATINGSAND CHARACTERISTIC CURVES (SS22THRU SS210) FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT .(A) 1 10 100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave JEDEC Method AT RATEDTL FIG.1- MAXIMUM FORWARD CURRENT DERATING CUR VE 50 60 70 80 90 100 110 120 160 150140130 0.5 1.0 2.0 1.5 LEADTEMPERATURE.( C) O RESISTIVE OR INDUCTIVE LOAD SS22-SS24 SS25-SS210 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS AVERAGE FORWARD CURRENT .(A) TJ=150 C O FIG.3-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT .(A) 0.01 0.1 FORWARD VOLTAGE.(V) TJ=125 O C TJ=25 O C PULSE WIDTH=300 S 1% DUTY CYCLE SS22-SS24 SS25-SS26 SS29-SS210 FIG.4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT .(mA) 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) TJ=125 O C TJ=75 O C TJ=25 O C 0.001 0.01 0.1 100 SS22-SS24 SS25-SS210 FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) 0.1 1 10 100 100 400 REVERSE VOLTAGE.(V) SS29-SS210 SS22-SS24 SS25-SS26 Tj=25 C O f=1.0MHz Vsig=50mVp-p C,CAPACITANCE (pF) 320 280 240 200 160 120 0 4 8 1 21 6 2 02 4 2 8 3 2 V R ,REVERSE VOL T AGE (VOLTS) 36 40 360 400 NOTE:TYPICAL CAPACITANCE AT 0 V = 320 pF FIG.6-TYPICAL CAPACITANCE