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! Schottk y Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical Da ta ! T erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Rat ings and Electrical Characteristics @TA=25°C unl ess otherwise specified Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Average Rec tified Output Current @T L = 75°C IO Non-Repeti t ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward V oltage @I F = 2 .0A V FM Peak Revers e Current @T A = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.5 20 mA R/G01JL R/G01JA 88 °C/W Operati ng T emperature Range Tj -65 to +125 °C S torage T emperature Range TSTG -65 to +150 °C Note: 1. M ounted on P.C. Board with 5.0mm2 copper pad area. 1 of 2 SS22F - SS220F Ty pi cal Thermal Resistance (Note 1) jC 110 30 110 pF Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SMAF 3.603.20 2.802.40 Dim M i n Max A B C D E F G All Dim ensions in mm 0.200.10 4.804.40 1.100.90 0.90 - 1.431.38 A B C DF E G Alldatasheet
0.01 0.1 1.0 0 0.4 0.8 1.2 I, INST ANTANEOUS FORWARD CURRENT (A) F V , INSTA NTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F T - 25ºCj I Pulse Width = 300 sF µ 100 1000 0.1 1 10 100 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOL T AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C
1 MHz
j 0 20 40 60 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A)FSM NUMBER OF CYCLES A T 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) T =
100 Cj °
1.0 2.0 25 50 75 100 125 150 I A VERAGE FOR WARD CURRENT (A) (AV), T, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L SS22F- SS24F SS25F- SS26F SS28F- SS210F SS215F- SS220F Alldatasheet