SS26-E3 VISHAY | Alldatasheet
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Technical content
Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier
FEATURES
- Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop High surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Solder dip 260 °C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V to 60 V IFSM 75 A VF 0.50 V, 0.70 V TJ max. 125 °C, 150 °C DO-214AA (SMB) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS22 SS23 SS24 SS25 SS26 UNIT Device marking code S2 S3 S4 S5 S6 Maximum repetitive peak reverse voltage V RRM 20 30 40 50 60 V Maximum RMS voltage V RMS 14 21 28 35 42 V Maximum DC blocking voltage V DC 20 30 40 50 60 V Max. average forward rectified current at TL (Fig. 1) I F(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 2.0 A, L = 10 mH EAS 20 mJ Electrostatic discharge capacitor voltage Human body model: C = 100 pF , R = 1.5 kΩ VC 8.0 KV Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction temperature range T J - 65 to + 125 - 65 to + 150 °C Storage temperature range T STG - 65 to + 150 °C
Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Current Characteristics Figure 5. Typical Junction Capacitance