SS25HE3 VISHAY | Alldatasheet
Document overview
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Technical content
www.vishay.com Vishay General Semiconductor Revision: 27-Mar-12 1 Document Number: 88748 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Schottky Barrier Rectifier TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converte rs, and polarity protection applications.
FEATURES
- Low profile package
- Ideal for automated placement
- Guardring for overvoltage protection
- Low power losses, high efficiency
- Low forward voltage drop
- High surge capability
- Meets MSL level 1, per J-ST D-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V to 60 V IFSM 75 A VF 0.50 V, 0.70 V TJ max. 125 °C, 150 °C DO-214AA (SMB) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS22 SS23 SS24 SS25 SS26 UNIT Device marking code S2 S3 S4 S5 S6 Maximum repetitive peak reverse voltage V RRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Max. average forward rectified current at TL (fig. 1) I F(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 2.0 A, L = 10 mH EAS 20 mJ Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k VC 8.0 kV Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction temperature range TJ - 65 to + 125 - 65 to + 150 °C Storage temperature range TSTG - 65 to + 150 °C
www.vishay.com Vishay General Semiconductor Revision: 27-Mar-12 2 Document Number: 88748 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Note Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Surge Current ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL SS22 SS23 SS24 SS25 SS26 UNIT Maximum instantaneous forward voltage (1) 2.0 A V F 0.5 0.7 V Maximum DC reverse current at rated DC blocking voltage (1) TA = 25 °C IR 0.4 mA TA = 100 °C 10 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS22 SS23 SS24 SS25 SS26 UNIT Typical thermal resistance (1) RJA 75 °C/W RJL 17 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS24-E3/52T 0.096 52T 750 7" diameter plastic tape and reel SS24-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel SS24HE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel SS24HE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel 50 70 90 110 130 150 0.5 1.0 1.5 2.0 P. C . B . M ounted on Copper Pad Areas Resistive or Inductive Load SS22 thru SS24 SS25 and SS26 Lead Temperature (°C) Average For ward C urrent (A) 170 1 10 100 100 At Rated TL 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz Peak For ward S urge C urrent (A)
www.vishay.com Vishay General Semiconductor Revision: 27-Mar-12 3 Document Number: 88748 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Current Characteristics Fig. 5 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.01 0.1 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Instantaneous Forward Voltage (V) Instantaneo us For ward C urrent (A) SS22 thru SS24 SS25 and SS26 0 20 40 60 80 100 0.001 0.01 0.1 100 TA = 125 °C TA = 25 °C TA = 75 °C Percent of Rated Peak Reverse Voltage (%) Instantaneo us Re verse C urrent (mA) SS22 thru SS24 SS25 and SS26 100 1000 0.1 1 10 100 Reverse Voltage (V) Junction Capaci tance (pF) SS22 thru SS24 SS25 and SS26 TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0.180 (4.57) 0.160 (4.06) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) DO-214AA (SMB) 0 (0) Cathode Band 0.085 (2.159) MAX. 0.220 REF. 0.086 (2.18) MIN. 0.060 (1.52) MIN. Mounting Pad Layout
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