SS22-J HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM
- High surge current capability
Applications
- Rectifier From 2 To 20X Marking Polarity: Color band denotes cathode SS2X H igh Diode Semiconductor SMAJ SS22 THRU SS220 Schottky Rectifier 20V-200V Notes: pad areas Item Symbol Unit Test Conditions SS2 Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, TL(Fig.1) 2.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 50 Junction Temperature T J Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified) Item Symbol Unit Test Condition SS2 Peak Forward Voltage V F V I F =2.0A Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ I RRM2 Ta =100℃ 10 5.0 Thermal Resistance(Typical) R θJ-A W Between junction and ambient 75 R θJ-L Between junction and terminal 17 2 3 4 6 8 10 15 20 20 30 40 60 80 100 150 200 -55~+125 -55~+150 2 3 4 6 8 10 15 20 0.55 0.7 0.85 0.95 0.5 0.1 Maximum RMS V RMS V Vo ltage 14 21 28 42 56 70 105 140
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 100 0.5 1.0 1.5 2.0 2.5 25 75 125 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 0.20 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) 0 20 40 60 80 100 0.001 Tj=25 Tj=75 100 1.0 0.1 0.01 Tj=125 SS22-SS2 4 SS25-SS220 SS22-SS24 SS25-SS26 SS22 - SS24 SS25 -SS220 SS28-SS210 SS215-SS220
H igh Diode Semiconductor SMAJ SMAJ Dimensions in inches and (millimeters) 0.177(4.50) 0.157(3.99) 0.110(2.80) 0.098(2.50) 0.060(1.52) 0.030(0.76) 0.222(5.66) 0.194(4.93) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.42) 0.078(1.98) 0.067 (1.70) 0.047 (1.20) 4.12 2.0 1.8
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA