SS24BF FUTUREWAFER | Alldatasheet

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Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 1. Synopsis 1-1. General Description These Devices Employ The Schottky Barrier Principle in a Metal−to−Silicon Power Rectifier. Features Epitaxial Construction With Oxide Passivation and Metal Overlay Contact. Ideally Suited For Low Voltage, High Frequency Switching Power Supplies; Free Wheeling Diodes and Polarity Protection Diodes. 1-2. Feature List

  • High Surge Current Capability
  • Low Power Loss, High Efficiency
  • Highly Stable Oxide Passivated Junction
  • Low Forward Voltage Drop 1-3. Applications
  • For Use In Low Voltage High Frequency Inverters, Freewheeling, DC/DC Converters, and Polarity Protection Applications. 1-4. Benefits
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction Of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway
  • Higher System Reliability Due To Lower Operating Temperatures 1-5. Mechanical Characteristics
  • Molded JEDEC Package : SMBF
  • Packing: Tape and Reel
  • Flammability rating UL 94V -0
  • Halogen Free
  • JEDEC MSL Classification: Level 1 Cathode Anode SMBF

Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 2. Contents

Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 3. Electrical Property 3-1. Absolute Maximum Ratings 3-2. Electrical Characteristics (TA=25°C)

Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 3-3. Ratings and Characteristics Curve (TA=25°C unless otherwise noted) Fig 2. Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage, VF (V) Instantaneous Forward Current (A) TM - Mount Temperature (°C) Average Forward Rectified Current (A) Fig 1. Maximum Forward Current Derating Curve Fig 3. Typical Reverse Current Characteristics Number of Cycles at 60Hz Percent of Rated Peak Reverse Voltage, VR (%) Peak Forward Surge Current (A) Instantaneous Reverse Current (uA) Fig 4. Maximum Non-Repetitive Forward Surge Current SS24BF / 26BF, T A=25°C SS210BF, T A=125°C SS210BF, T A=25°C SS24BF / 26BF, T A=125°C SS24BF / 26BF, T A=25°C SS24BF / 26BF, T A=125°C SS210BF, T A=25°C SS210BF, T A=125°C TM measured at cathode terminal mount typical values

Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 4. Soldering Parameters

Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 5. Package Information 5-1. Dimension 5-2. PCB Pad Layout Recommendation Unit:mm Unit:mm

Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 6. Packing 6-1. Taping and Reel Specification Taping Width Tape Orientation 12mm 6-2. Embossed Carrier Tape Specification Unit:mm Direction Of Feed

Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 6-3. Surface Mount Reel Specification 6-4. Tape Leader and Trailer Specification Unit:mm

Surface Mount Schottky Barrier Rectifier Document No.: F218288 07-NOV-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 7. Ordering Information 8. Version 8-1. History 8-2. Company Profile Futurewafer Tech Co., Ltd. 台灣未來芯科技股份有限公司 TEL: +886-3-3350161 / FAX: +886-3-3350172 cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan