SS210

SS210 VBSEMI | Alldatasheet

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FEATURES

• TrenchFET ® Power MOSFET  100 % R g and UIS Tested

APPLICATIONS

 Primary Side Switch  Isolate d DC/DC Converter Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a Qg (Typ.) 100 0.0185 at VGS = 10 V 60 38 nC SGD Top View TO-252 N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unle ss otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltag e VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 60a A TC = 100 °C 45 TA = 25 °C 9.2b TA = 100 °C 6.8b Pulsed Drain Current IDM 140 Continuous Source-Drain Diode Current TC = 25 °C IS 60a TA = 25 °C 2b Single Pulse Avalanche Current L = 0.1 mH IAS 45 Avalanche Energy EAS 101 mJ Maximum Pow er Dissipation TC = 25 °C PD 136.4 W TC = 100 °C 68.2 TA = 25 °C 3b TA = 100 °C 1.5b Operating Junction and St orage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxim u m Unit Maximum Junction-to-Ambientb Steady State RthJA 40 50 °C/W Maximum Junction-to-Case RthJC 0.85 1.1 N-Channel 100-V (D-S) MOSFET SS210 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: a. P ulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, u nless otherwise noted) Parameter Symb ol T est Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 110 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 12.5 Gate-Source Threshold V oltage VGS(th) VDS = VGS, ID = 250 µA 2.5 5 V Gate-Sou rce Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate V oltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 On-State Drain Currenta ID(on) V DS 5 V, VGS = 10 V 50 A Drain-Source On-State Resista ncea RDS(on) VGS = 10 V, ID = 15 A 0.0185  Forward Transconductancea gfs VDS = 15 V, ID = 15 A 33 S Dynamicb Input Capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 2400 pFOutput Capacitance Coss 230 Reverse Transfe r Capacitance Crss 80 Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 50 A nCGate-Sou rce Charge Qgs 14 Gate-Drain Charge Qgd Gate Resistan ce Rg f = 1 MHz 1.6 2.5  Turn -On Delay Time td(on) VDD = 50 V, RL = 1  ID  50 A, VGEN = 10 V, Rg = 1  12 20 ns Rise Time tr 10 20 Turn-Off Dela y Time td(off) 18 35 Fall T ime tf 81 5 Drain-Source Bo dy Diode Characteristics Continuous Source-Drain Diode IS TC = 25 °C 50 A Pulse Diode Forw ard Currenta ISM 100 Body Diode Voltage VSD IS = 15 A 0.85 1.5 V Body Diode Rev erse Recovery Time t rr IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C 80 120 n s Body Diode Re verse Recovery Charge Q rr 160 240 nC Reve rse Recovery Fall Time ta 57 ns Reverse Recover y Rise Time tb 23 SS210 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

S (25 °C, unless otherwise note) Output Character istics Transconductance On-Resistance vs. Gate-to-Source Voltage 100 012345 VDS - Drain-to-So urce Voltage (V) - Drain Current (A)I D VGS =1 0V thru8V VGS =6V VGS =7V 0 1 02 03 04 0 5 0 ID - Drain Current (A) - Transconductance ( S)gfs TC = 25 °C TC = 125 °C TC = - 55 °C 0.00 0.02 0.04 0.06 0.08 0.10 4567 8 91 0 - On-Resistance (Ω )RDS(on) VGS - Gate-to- Source Voltage (V) TA = 25 °C TA = 150 °C ID =1 5A Transfer Ch aracteristics On-Resistance vs. Drain Current Capacitance 0.0 0.4 0.8 1.2 1.6 2.0 0246 8 10 VGS - Gate-to- Source Voltage (V) - Drain Current (A)I D TC = 125 °C TC = - 55 °C TC = 25 °C 0.000 0.009 0.018 0.027 0.036 0 2 04 06 0 8 0 100 - On-Resistance (Ω )RDS(on) ID - Drain Current (A) VGS =1 0V Crss0 700 1400 2100 2800 3500 02 0 4 0 6 0 8 0 100 Coss Ciss VDS - Drain-to-So urce Voltage (V) C - Capacitance (pF) SS210 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) Gate Charge Source-Drain D iode Forward Voltage Single Pulse Power, Junction-to-Ambient 0 2 04 06 08 0 100 ID =2 0A - Gate-to-Sou rce Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 80 V VDS =5 0 V 1.2 VSD -S ource-to- Drain Voltage (V) - Source Current (A)I S 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C 120 180 240 300 Power (W) Time (s) 10 10000.10.010.001 1001 TA = 25 °C On-Resistance vs. Junction Te mperature Threshold Voltage Single Pulse Power, Junction-to-Case 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) ID =1 5A VGS =1 0V - 2.3 - 1.8 - 1.3 - 0.8 - 0.3 0.2 0.7 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) ID =5m A 100 200 300 400 500 600 1011 0 0 .00 .01 Time (s) Power (W) 0.1 TC = 25 °C SS210 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

S (25 °C, unless otherwise noted) The power dissipation P D is based on T J(max.) = 175 °C, using junction-to-case ther mal resistance, and is more usef ul in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Safe Operating Area, Junction-to-Ambient Current Derating, Junction-to-Ambient 0.01 0.1 100 1000 0.1 1.0 10 100 1000 - Drain Current (A)ID VDS - Drain-to-So urce Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms 10 ms 1m s TA = 25 °C Single Pulse Limited byR DS(on)* 10 s 100 s, DC 10 µs, 100 µs 0 25 50 75 100 125 150 175 TA -A mbient Temperatu re (°C) ID - Drain Current (A) Safe Operating Area, Junctio n-to-Case Current Derating**, Junction-to-Case 0.01 0.1 100 1000 0.1 1.0 10 100 1000 - Drain Current (A)ID VDS - Drain-to-So urce Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1m s 10 µs 100 µs TC = 25 °C Single Pulse Limited byR DS(on)* 100 ms, DC 10 ms 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Package Limited ID - Drain Current (A) SS210 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 ° C, unless otherwise noted) The power dissipation P D is based on T J(max) = 175 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Power Derating, Junction-to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 175 TA -A mbient Temperatu re (°C) Power (W) Power Derating**, Junction-to-Case 100 120 140 160 180 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Power (W) SS210 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

S (25 °C, unless otherwise noted) Normalized Thermal T ransient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =5 0 ° C /W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 Normalized Therm al Transient Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective T ransient Thermal Impedance Single Pulse 0.1 10-3 10-2 110-110-4 0.02 0.05 SS210 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. SS210 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com