LM2736YMK TI | Alldatasheet
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www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 LM2736ThinSOT750mALoadStep-DownDC-DCRegulator Check forSamples: LM2736 1FEATURES DESCRIPTION The LM2736 regulatorisa monolithic,highfrequency, 23• Thin SOT-6 Package PWM step-down DC/DC converterin a 6-pinThin• 3.0Vto18V InputVoltageRange SOT package.Itprovidesallthe activefunctionsto
- 1.25Vto16V Output VoltageRange providelocalDC/DC conversionwithfasttransient response and accurateregulationin the smallest• 750mA Output Current possiblePCB area.• 550kHz (LM2736Y) and 1.6MHz (LM2736X) With a minimum of externalcomponents and onlineSwitchingFrequencies designsupportthroughWEBENCH ® , the LM2736 is• 350m Ω NMOS Switch easy touse.The abilitytodrive750mA loadswithan• 30nA Shutdown Current internal350m Ω NMOS switchusing state-of-the-art
- 1.25V,2% InternalVoltageReference 0.5µm BiCMOS technologyresultsinthebestpower densityavailable.The world classcontrolcircuitry• InternalSoft-Start allowsforon-timesas low as 13ns,thussupporting• Current-Mode,PWM Operation exceptionallyhigh frequencyconversionover the
- WEBENCH ® OnlineDesign Tool entire3V to 18V inputoperatingrange down to the minimum output voltage of 1.25V. Switching• Thermal Shutdown frequencyisinternallyset to 550kHz (LM2736Y) or 1.6MHz (LM2736X), allowingthe use of extremelyAPPLICATIONS smallsurfacemount inductorsand chip capacitors.
- LocalPointofLoad Regulation Even thoughtheoperatingfrequenciesareveryhigh, efficienciesup to90% are easy toachieve.External• Core Power inHDDs shutdown isincluded,featuringan ultra-lowstand-by• Set-TopBoxes currentof 30nA. The LM2736 utilizescurrent-mode
- BatteryPowered Devices controland internalcompensationto providehigh- performance regulationover a wide range of• USB Powered Devices operatingconditions.Additionalfeaturesinclude• DSL Modems internalsoft-startcircuitryto reduce inrushcurrent,• Notebook Computers pulse-by-pulsecurrentlimit,thermalshutdown,and outputover-voltageprotection. TypicalApplicationCircuit Efficiencyvs Load Current"X" VIN = 5V,VOUT = 3.3V Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2WEBENCH isa registeredtrademarkofTexas Instruments. 3Allothertrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2004–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com Connection Diagram Figure1.6-Lead SOT Figure2.Pin 1 Indentification See Package Number DDC (R-PDSO-G6) PIN DESCRIPTIONS Pin Name Function 1 BOOST BoostvoltagethatdrivestheinternalNMOS controlswitch.A bootstrapcapacitorisconnectedbetween the BOOST and SW pins. 2 GND Signaland Power groundpin.Placethebottomresistorofthefeedbacknetworkas closeas possibletothispin foraccurateregulation. 3 FB Feedback pin.ConnectFB totheexternalresistordividertosetoutputvoltage. 4 EN Enablecontrolinput.Logichighenablesoperation.Do notallowthispintofloatorbe greaterthanVIN + 0.3V. 5 VIN Inputsupplyvoltage.Connecta bypasscapacitortothispin. 6 SW Outputswitch.Connectstotheinductor,catchdiode,and bootstrapcapacitor. These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1) VIN -0.5Vto22V SW Voltage -0.5Vto22V BoostVoltage -0.5Vto28V BoosttoSW Voltage -0.5Vto6.0V FB Voltage -0.5Vto3.0V EN Voltage -0.5Vto(VIN + 0.3V) JunctionTemperature 150°C ESD Susceptibility(2) 2kV StorageTemp. Range -65°C to150°C Infrared/ConvectionReflow(15sec) 220°C SolderingInformation Wave SolderingLead Temp. (10sec) 260°C (1) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (2) Human body model,1.5kΩ inserieswith100pF.
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www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 OperatingRatings(1) VIN 3V to18V SW Voltage -0.5Vto18V BoostVoltage -0.5Vto23V BoosttoSW Voltage 1.6Vto5.5V JunctionTemperatureRange −40°C to+125°C ThermalResistanceθJA (2) 118°C/W (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur.OperatingRatingsindicateconditionsfor whichthedeviceisintendedtobe functional,butspecificperformanceisnotensured.Forspecificspecificationsand thetestconditions, see ElectricalCharacteristics. (2) Thermalshutdownwilloccurifthejunctiontemperatureexceeds165°C. The maximum power dissipationisa functionofTJ(MAX) ,θJA and TA .The maximum allowablepower dissipationatany ambienttemperatureisPD = (TJ(MAX) – TA)/θJA .Allnumbers applyfor packagessoldereddirectlyontoa 3”x 3”PC boardwith2oz.copperon 4 layersinstillair.Fora 2 layerboardusing1 oz.copperinstill air,θJA = 204°C/W. ElectricalCharacteristics SpecificationswithstandardtypefaceareforTJ = 25°C, and thoseinboldfacetypeapplyoverthefullOperating Temperature Range (TJ = -40°C to125°C).VIN = 5V,VBOOST -VSW = 5V unlessotherwisespecified.Datasheetmin/max specificationlimitsareensuredby design,test,orstatisticalanalysis. Symbol Parameter Conditions Min (1) Typ (2) Max (1) Units VFB Feedback Voltage 1.225 1.250 1.275 V ΔVFB /ΔVIN Feedback VoltageLineRegulation VIN = 3V to18V 0.01 % /V IFB Feedback InputBiasCurrent Sink/Source 10 250 nA UndervoltageLockout VIN Rising 2.74 2.90 UVLO UndervoltageLockout VIN Falling 2.0 2.3 V UVLO Hysteresis 0.30 0.44 0.62 LM2736X 1.2 1.6 1.9 FSW SwitchingFrequency MHz LM2736Y 0.40 0.55 0.66 LM2736X 85 92 D MAX Maximum DutyCycle % LM2736Y 90 96 LM2736X 2 D MIN Minimum DutyCycle % LM2736Y 1 R DS(ON) SwitchON Resistance VBOOST -VSW = 3V 350 650 m Ω ICL SwitchCurrentLimit VBOOST -VSW = 3V 1.0 1.5 2.3 A IQ QuiescentCurrent Switching 1.5 2.5 mA QuiescentCurrent(shutdown) VEN = 0V 30 nA LM2736X (50% DutyCycle) 2.2 3.3 IBOOST BoostPinCurrent mA LM2736Y (50% DutyCycle) 0.9 1.6 Shutdown ThresholdVoltage VEN Falling 0.4 VEN_TH V EnableThresholdVoltage VEN Rising 1.8 IEN EnablePinCurrent Sink/Source 10 nA ISW SwitchLeakage 40 nA (1) SpecifiedtoTexas Instruments'AverageOutgoingQualityLevel(AOQL). (2) Typicalsrepresentthemost likelyparametricnorm. Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:LM2736
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics AllcurvestakenatVIN = 5V,VBOOST -VSW = 5V,L1 = 4.7µH ("X"),L1 = 10 µH ("Y"),and TA = 25°C, unlessspecified otherwise. Efficiencyvs Load Current-"X" VOUT = 5V Efficiencyvs Load Current-"Y" VOUT = 5V Figure3. Figure4. Efficiencyvs Load Current-"X" VOUT = 3.3V Efficiencyvs Load Current-"Y" VOUT = 3.3V Figure5. Figure6. Efficiencyvs Load Current-"X" VOUT = 1.5V Efficiencyvs Load Current-"Y" VOUT = 1.5V Figure7. Figure8.
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www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 TypicalPerformance Characteristics(continued) AllcurvestakenatVIN = 5V,VBOOST -VSW = 5V,L1 = 4.7µH ("X"),L1 = 10 µH ("Y"),and TA = 25°C, unlessspecified otherwise. OscillatorFrequency vs Temperature -"X" OscillatorFrequency vs Temperature -"Y" Figure9. Figure10. CurrentLimitvs Temperature VIN = 18V,VIN = 5V VFB vs Temperature Figure11. Figure12. R DSON vs Temperature IQ Switchingvs Temperature Figure13. Figure14. Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:LM2736
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics(continued) AllcurvestakenatVIN = 5V,VBOOST -VSW = 5V,L1 = 4.7µH ("X"),L1 = 10 µH ("Y"),and TA = 25°C, unlessspecified otherwise. LineRegulation-"X" VOUT = 1.5V,IOUT = 500mA LineRegulation-"Y" VOUT = 1.5V,IOUT = 500mA Figure15. Figure16. LineRegulation-"X" VOUT = 3.3V,IOUT = 500mA LineRegulation-"Y" VOUT = 3.3V,IOUT = 500mA Figure17. Figure18.
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L D BOOST Output Control Logic Current Limit Thermal Shutdown Under Voltage Lockout Corrective Ramp Reset Pulse PWM Comparator Current-Sense Amplifier RSENSE Internal Regulator and Enable Circuit Oscillator Driver 0.3: Switch Internal Compensation SW EN FB GND Error Amplifier - + VREF 1.25V C OUT ON OFF VBOOST VSW C BOOST VOUT C IN VIN VIN ISENSE + - - 1.375V OVP Comparator Error Signal IL LM2736 www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 Block Diagram Figure19.
APPLICATION INFORMATION
The LM2736 isa constantfrequencyPWM buck regulatorIC thatdeliversa 750mA loadcurrent.The regulator has a presetswitchingfrequencyof either550kHz (LM2736Y) or 1.6MHz (LM2736X).These highfrequencies allowtheLM2736 tooperatewithsmallsurfacemount capacitorsand inductors,resultinginDC/DC converters thatrequirea minimum amount ofboard space.The LM2736 isinternallycompensated,so itissimpletouse, and requiresfew externalcomponents.The LM2736 uses current-modecontroltoregulatetheoutputvoltage. The followingoperatingdescriptionoftheLM2736 willrefertotheSimplifiedBlockDiagram (Figure19) and to thewaveforms inFigure20.The LM2736 suppliesa regulatedoutputvoltageby switchingtheinternalNMOS controlswitchatconstantfrequencyand variabledutycycle.A switchingcyclebeginsatthefallingedge ofthe resetpulsegeneratedby theinternaloscillator.When thispulsegoes low,theoutputcontrollogicturnson the internalNMOS controlswitch.Duringthison-time,theSW pinvoltage(VSW )swingsup toapproximatelyVIN,and the inductorcurrent(IL) increaseswitha linearslope.IL ismeasured by the current-senseamplifier,which generatesan outputproportionalto the switchcurrent.The sense signalis summed with the regulator’s correctiveramp and compared totheerroramplifier’s output,whichisproportionaltothedifferencebetween the feedbackvoltageand VREF .When thePWM comparatoroutputgoes high,theoutputswitchturnsoffuntilthe nextswitchingcyclebegins.Duringtheswitchoff-time,inductorcurrentdischargesthroughSchottkydiodeD1, which forcestheSW pintoswing below ground by theforwardvoltage(VD ) ofthecatchdiode.The regulator loopadjuststhedutycycle(D)tomaintaina constantoutputvoltage. Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:LM2736
L C OUT C BOOST VOUT C IN VINVIN VBOOST VIN VD TON t t Inductor Current D = TON /TSW VSW TOFF TSW IL IPK SW Voltage LM2736 SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com Figure20. LM2736 Waveforms ofSW Pin Voltageand InductorCurrent BOOST FUNCTION CapacitorC BOOST and diodeD2 inFigure21 are used togeneratea voltageVBOOST .VBOOST - VSW isthegate drivevoltagetotheinternalNMOS controlswitch.To properlydrivetheinternalNMOS switchduringitson-time, VBOOST needs tobe atleast1.6V greaterthanVSW .AlthoughtheLM2736 willoperatewiththisminimum voltage, itmay nothave sufficientgatedrivetosupplylargevaluesofoutputcurrent.Therefore,itisrecommended that VBOOST be greaterthan 2.5V above VSW forbest efficiency.VBOOST – VSW shouldnot exceed the maximum operatinglimitof5.5V. 5.5V> VBOOST – VSW > 2.5Vforbestperformance. Figure21. VOUT Charges C BOOST When theLM2736 startsup,internalcircuitryfromtheBOOST pinsuppliesa maximum of20mA toC BOOST .This currentchargesC BOOST to a voltagesufficientto turnthe switchon. The BOOST pinwillcontinueto source currenttoC BOOST untilthevoltageatthefeedbackpinisgreaterthan1.18V. Therearevariousmethods toderiveVBOOST : 1. From theinputvoltage(VIN) 2. From theoutputvoltage(VOUT ) 3. From an externaldistributedvoltagerail(VEXT ) 4. From a shuntorserieszenerdiode IntheSimplifedBlockDiagram ofFigure19,capacitorC BOOST and diodeD2 supplythegate-drivecurrentforthe NMOS switch.CapacitorC BOOST ischarged viadiodeD2 by VIN. Duringa normal switchingcycle,when the internalNMOS controlswitchisoff(TOFF )(refertoFigure20),VBOOST equalsVIN minus theforwardvoltageofD2 (VFD2 ),duringwhich thecurrentintheinductor(L)forwardbiasestheSchottkydiodeD1 (VFD1 ).Thereforethe voltagestoredacrossC BOOST is VBOOST -VSW = VIN -VFD2 + VFD1 (1)
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L VBOOSTVIN C IN C OUT VOUT LM2736 www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 When theNMOS switchturnson (TON ),theswitchpinrisesto VSW = VIN – (RDSON x IL), (2) forcingVBOOST torisethusreversebiasingD2. The voltageatVBOOST isthen VBOOST = 2VIN – (RDSON x IL)– VFD2 + VFD1 (3) whichisapproximately 2VIN -0.4V (4) formany applications.Thus thegate-drivevoltageoftheNMOS switchisapproximately VIN -0.2V (5) An alternatemethod forchargingC BOOST isto connectD2 to the outputas shown inFigure21. The output voltageshouldbe between 2.5V and 5.5V,so thatpropergatevoltagewillbe appliedtotheinternalswitch.In thiscircuit,C BOOST providesa gatedrivevoltagethatisslightlylessthanVOUT . In applicationswhere both VIN and VOUT are greaterthan 5.5V,or lessthan 3V, C BOOST cannotbe charged directlyfrom thesevoltages.IfVIN and VOUT are greaterthan 5.5V,C BOOST can be charged from VIN or VOUT minus a zener voltageby placinga zener diodeD3 inserieswithD2, as shown inFigure22. When usinga serieszenerdiodefromtheinput,ensurethattheregulationoftheinputsupplydoesn’tcreatea voltagethatfalls outsidetherecommended VBOOST voltage. (VINMAX – VD3 )< 5.5V (VINMIN – VD3 )> 1.6V Figure22. Zener Reduces Boost Voltagefrom VIN An alternativemethod istoplacethezenerdiodeD3 ina shuntconfigurationas shown inFigure23.A small 350mW to 500mW 5.1V zener in a SOT or SOD package can be used forthispurpose.A smallceramic capacitorsuch as a 6.3V,0.1µF capacitor(C4) shouldbe placedinparallelwiththe zener diode.When the internalNMOS switchturnson,a pulseofcurrentisdrawn tochargetheinternalNMOS gatecapacitance.The 0.1µF parallelshuntcapacitorensuresthattheVBOOST voltageismaintainedduringthistime. ResistorR3 shouldbe chosen toprovideenough RMS currenttothezenerdiode(D3)and totheBOOST pin.A recommended choiceforthezenercurrent(IZENER )is1 mA. The currentIBOOST intotheBOOST pinsuppliesthe gate currentof the NMOS controlswitchand variestypicallyaccordingto the followingformulaforthe X - version: IBOOST = 0.49x (D + 0.54)x (VZENER – VD2 )mA (6) IBOOST can be calculatedfortheY versionusingthefollowing: IBOOST = 0.20x (D + 0.54)x (VZENER -VD2 )µA (7) where D isthedutycycle,VZENER and VD2 areinvolts,and IBOOST isinmilliamps.VZENER isthevoltageappliedto theanode oftheboostdiode(D2),and VD2 istheaverageforwardvoltageacrossD2. Note thatthisformulafor IBOOST givestypicalcurrent.For theworstcase IBOOST ,increasethecurrentby 40%. Inthatcase,theworstcase boostcurrentwillbe IBOOST-MAX = 1.4x IBOOST (8) R3 willthenbe givenby R3 = (VIN -VZENER )/(1.4x IBOOST + IZENER ) (9) For example,usingtheX-versionletVIN = 10V, VZENER = 5V, VD2 = 0.7V,IZENER = 1mA, and dutycycleD = 50%. Then Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:LM2736
L D2D3 VBOOST C BOOST VZ VIN C IN C OUT VOUT LM2736 SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com Figure23. Boost VoltageSuppliedfrom theShunt Zener on VIN ENABLE PIN /SHUTDOWN MODE The LM2736 has a shutdown mode thatiscontrolledby theenablepin(EN).When a logiclow voltageisapplied to EN, the partisinshutdown mode and itsquiescentcurrentdrops to typically30nA. Switchleakageadds another40nA fromtheinputsupply.The voltageatthispinshouldneverexceed VIN + 0.3V. SOFT-START ThisfunctionforcesVOUT toincreaseata controlledrateduringstartup.Duringsoft-start,theerroramplifier’s referencevoltageramps from0V toitsnominalvalueof1.25V inapproximately200µs.Thisforcestheregulator outputtoramp up ina more linearand controlledfashion,whichhelpsreduceinrushcurrent. OUTPUT OVERVOLTAGE PROTECTION The overvoltagecomparatorcompares the FB pin voltageto a voltagethatis10% higherthan the internal referenceVref.Once the FB pin voltagegoes 10% above the internalreference,the internalNMOS control switchisturnedoff,whichallowstheoutputvoltagetodecreasetowardregulation. UNDERVOLTAGE LOCKOUT Undervoltagelockout(UVLO) preventstheLM2736 fromoperatinguntiltheinputvoltageexceeds2.74V(typ). The UVLO thresholdhas approximately440mV of hysteresis,so the partwilloperateuntilVIN drops below 2.3V(typ).Hysteresispreventsthepartfromturningoffduringpower up ifVIN isnon-monotonic. CURRENT LIMIT The LM2736 uses cycle-by-cyclecurrentlimitingto protectthe outputswitch.Duringeach switchingcycle,a currentlimitcomparatordetectsiftheoutputswitchcurrentexceeds 1.5A (typ),and turnsofftheswitchuntilthe nextswitchingcyclebegins. THERMAL SHUTDOWN Thermalshutdown limitstotalpower dissipationby turningofftheoutputswitchwhen theIC junctiontemperature exceeds 165°C. Afterthermalshutdown occurs,theoutputswitchdoesn’tturnon untilthejunctiontemperature dropstoapproximately150°C.
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L = VO + VD IO x r x fS x (1-D) r = 'iL lO D = VO + VD VIN + VD - VSW D = VO VIN LM2736 www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 Design Guide INDUCTOR SELECTION The DutyCycle(D)can be approximatedquicklyusingtheratioofoutputvoltage(VO )toinputvoltage(VIN): (12) The catchdiode(D1)forwardvoltagedropand thevoltagedropacrosstheinternalNMOS must be includedto calculatea more accuratedutycycle.CalculateD by usingthefollowingformula: (13) VSW can be approximatedby: VSW = IO x R DS(ON) (14) The diodeforwarddrop(VD )can rangefrom0.3V to0.7V dependingon thequalityofthediode.The lowerVD is, thehighertheoperatingefficiencyoftheconverter. The inductorvaluedeterminestheoutputripplecurrent.Lower inductorvaluesdecreasethesizeoftheinductor, butincreasetheoutputripplecurrent.An increaseintheinductorvaluewilldecreasetheoutputripplecurrent. The ratioofripplecurrent(ΔiL)tooutputcurrent(IO )isoptimizedwhen itissetbetween 0.3and 0.4at750mA. The ratiorisdefinedas: (15) One must alsoensurethattheminimum currentlimit(1.0A)isnotexceeded,so thepeak currentintheinductor must be calculated.The peak current(ILPK )intheinductoriscalculatedby: ILPK = IO + ΔIL/2 (16) Ifr= 0.7atan outputof750mA, thepeak currentintheinductorwillbe 1.0125A.The minimum ensuredcurrent limitoveralloperatingconditionsis1.0A.One can eitherreducer to0.6resultingina 975mA peak current,or make theengineeringjudgementthat12.5mA overwillbe safeenough witha 1.5A typicalcurrentlimitand 6 sigma limits.When thedesignedmaximum outputcurrentisreduced,theratiorcan be increased.Ata currentof 0.1A,rcan be made as highas 0.9.The rippleratiocan be increasedatlighterloadsbecause thenetrippleis actuallyquitelow,and ifrremainsconstanttheinductorvaluecan be made quitelarge.An equationempirically developedforthemaximum rippleratioatany currentbelow2A is: r= 0.387x IOUT -0.3667 (17) Note thatthisisjusta guideline. The LM2736 operatesat frequenciesallowingthe use of ceramic outputcapacitorswithoutcompromising transientresponse.Ceramic capacitorsallowhigherinductorripplewithoutsignificantlyincreasingoutputripple. See theOUTPUT CAPACITOR sectionformore detailson calculatingoutputvoltageripple. Now thattheripplecurrentorrippleratioisdetermined,theinductanceiscalculatedby: (18) where fs istheswitchingfrequencyand IO istheoutputcurrent.When selectingan inductor,make surethatitis capableof supportingthe peak outputcurrentwithoutsaturating.Inductorsaturationwillresultin a sudden reductionininductanceand preventtheregulatorfromoperatingcorrectly.Because ofthespeed oftheinternal currentlimit,thepeak currentoftheinductorneed onlybe specifiedfortherequiredmaximum outputcurrent.For example,ifthedesignedmaximum outputcurrentis0.5A and thepeak currentis0.7A,thentheinductorshould Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:LM2736
IRMS-OUT = IO x r 'VO = 'iL x (RESR + 1 8 x fS x CO IRMS-IN = IO x D x r2 121-D + LM2736 SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com be specifiedwitha saturationcurrentlimitof>0.7A.There isno need tospecifythesaturationorpeak currentof theinductoratthe1.5A typicalswitchcurrentlimit.The differenceininductorsizeisa factorof5.Because ofthe operatingfrequencyoftheLM2736, ferritebased inductorsarepreferredtominimizecorelosses.Thispresents littlerestrictionsincethevarietyofferritebased inductorsishuge.Lastly,inductorswithlowerseriesresistance (DCR) willprovidebetteroperatingefficiency.Forrecommended inductorssee Example Circuits. INPUT CAPACITOR An inputcapacitorisnecessaryto ensure thatVIN does not drop excessivelyduringswitchingtransients.The primaryspecificationsoftheinputcapacitorare capacitance,voltage,RMS currentrating,and ESL (Equivalent SeriesInductance).The recommended inputcapacitanceis10µF, although4.7µF works wellforinputvoltages below 6V. The inputvoltageratingisspecificallystatedby thecapacitormanufacturer.Make suretocheck any recommended deratingsand alsoverifyifthereisany significantchange incapacitanceattheoperatinginput voltageand theoperatingtemperature.The inputcapacitormaximum RMS inputcurrentrating(IRMS-IN )must be greaterthan: (19) Itcan be shown from theabove equationthatmaximum RMS capacitorcurrentoccurswhen D = 0.5.Always calculatetheRMS atthepointwhere thedutycycle,D, isclosestto0.5.The ESL ofan inputcapacitorisusually determinedby theeffectivecrosssectionalareaofthecurrentpath.A largeleadedcapacitorwillhave highESL and a 0805 ceramicchipcapacitorwillhave verylow ESL. At theoperatingfrequenciesoftheLM2736, certain capacitorsmay have an ESL so largethatthe resultingimpedance (2πfL)willbe higherthan thatrequiredto providestableoperation.As a result,surfacemount capacitorsare stronglyrecommended. Sanyo POSCAP, Tantalumor Niobium,PanasonicSP or CornellDubilierESR, and multilayerceramiccapacitors(MLCC) are all good choicesforbothinputand outputcapacitorsand have verylow ESL. For MLCCs itisrecommended touse X7R or X5R dielectrics.Consultcapacitormanufacturerdatasheetto see how ratedcapacitancevariesover operatingconditions. OUTPUT CAPACITOR The outputcapacitorisselectedbased upon thedesiredoutputrippleand transientresponse.The initialcurrent ofa loadtransientisprovidedmainlyby theoutputcapacitor.The outputrippleoftheconverteris: (20) When usingMLCCs, theESR istypicallyso low thatthecapacitiveripplemay dominate.When thisoccurs,the outputripplewillbe approximatelysinusoidaland 90° phase shiftedfrom the switchingaction.Given the availabilityand qualityofMLCCs and theexpectedoutputvoltageofdesignsusingtheLM2736, thereisreallyno need toreviewany othercapacitortechnologies.Anotherbenefitofceramiccapacitorsistheirabilitytobypass highfrequencynoise.A certainamount ofswitchingedge noisewillcouplethroughparasiticcapacitancesinthe inductorto the output.A ceramiccapacitorwillbypass thisnoisewhilea tantalumwillnot.Since the output capacitorisone of the two externalcomponents thatcontrolthe stabilityof the regulatorcontrolloop,most applicationswillrequirea minimum at10 µF ofoutputcapacitance.Capacitancecan be increasedsignificantly withlittledetrimenttotheregulatorstability.Liketheinputcapacitor,recommended multilayerceramiccapacitors areX7R orX5R. Again,verifyactualcapacitanceatthedesiredoperatingvoltageand temperature. Check theRMS currentratingofthecapacitor.The RMS currentratingofthecapacitorchosen must alsomeet thefollowingcondition: (21)
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R 1 = VO - 1 VREF x R2 LM2736 www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 CATCH DIODE The catchdiode(D1)conductsduringtheswitchoff-time.A Schottkydiodeisrecommended foritsfastswitching timesand lowforwardvoltagedrop.The catchdiodeshouldbe chosen so thatitscurrentratingisgreaterthan: ID1 = IO x (1-D) (22) The reversebreakdown ratingofthediodemust be atleastthemaximum inputvoltageplusappropriatemargin. To improveefficiencychoose a Schottkydiodewitha lowforwardvoltagedrop. BOOST DIODE A standarddiodesuch as the1N4148 typeisrecommended. For VBOOST circuitsderivedfromvoltageslessthan 3.3V,a small-signalSchottkydiodeisrecommended forgreaterefficiency.A good choiceisthe BAT54 small signaldiode. BOOST CAPACITOR A ceramic0.01µF capacitorwitha voltageratingofatleast6.3V issufficient.The X7R and X5R MLCCs provide thebestperformance. OUTPUT VOLTAGE The outputvoltageissetusingthefollowingequationwhere R2 isconnectedbetween theFB pinand GND, and R1 isconnectedbetween VO and theFB pin.A good valueforR2 is10kΩ. (23) PCB Layout Considerations When planninglayoutthereare a few thingstoconsiderwhen tryingtoachievea clean,regulatedoutput.The most importantconsiderationwhen completingthelayoutistheclosecouplingoftheGND connectionsoftheC IN capacitorand thecatchdiodeD1. These groundends shouldbe closetoone anotherand be connectedtothe GND planewithat leasttwo through-holes.Place thesecomponents as closeto the IC as possible.Next in importanceis the locationof the GND connectionof the C OUT capacitor,which should be near the GND connectionsofC IN and D1. There shouldbe a continuousgroundplaneon thebottomlayerofa two-layerboardexceptundertheswitching node island. The FB pinisa highimpedance node and careshouldbe takentomake theFB traceshorttoavoidnoisepickup and inaccurateregulation.The feedbackresistorsshouldbe placedas closeas possibletotheIC,withtheGND ofR2 placedas closeas possibletotheGND oftheIC.The VOUT tracetoR1 shouldbe routedaway fromthe inductorand any othertracesthatareswitching. High AC currentsflowthroughtheVIN,SW and VOUT traces,so theyshouldbe as shortand wide as possible. However, making thetraceswide increasesradiatednoise,so thedesignermust make thistrade-off.Radiated noisecan be decreasedby choosinga shieldedinductor. The remainingcomponents shouldalsobe placedas closeas possibletotheIC.Pleasesee ApplicationNote AN-1229 SNVA054 forfurtherconsiderationsand theLM2736 demo boardas an example ofa four-layerlayout. Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:LM2736
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com LM2736X CircuitExamples Figure24. LM2736X (1.6MHz) VBOOST Derivedfrom VIN 5V to1.5V/750mA Table1.BillofMaterialsforFigure24 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736X TI C1, InputCap 10µF,6.3V,X5R C3216X5ROJ106M TDK C2, OutputCap 10µF,6.3V,X5R C3216X5ROJ106M TDK C3, BoostCap 0.01uF,16V,X7R C1005X7R1C103K TDK D1, CatchDiode 0.3VF Schottky1A,10VR MBRM110L ON Semi D2, BoostDiode 1VF @ 50mA Diode 1N4148W Diodes,Inc. L1 4.7µH, 1.7A, VLCF4020T- 4R7N1R2 TDK R1 2kΩ,1% CRCW06032001F Vishay R2 10kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay
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www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 Figure25. LM2736X (1.6MHz) VBOOST Derivedfrom VOUT 12V to3.3V/750mA Table2.BillofMaterialsforFigure25 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736X TI C1, InputCap 10µF,25V,X7R C3225X7R1E106M TDK C2, OutputCap 22µF,6.3V,X5R C3216X5ROJ226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK D1, CatchDiode 0.34VF Schottky1A,30VR SS1P3L Vishay D2, BoostDiode 30V,200 mA Schottky BAT54 DiodesInc. L1 4.7µH, 1.7A, VLCF4020T- 4R7N1R2 TDK R1 16.5kΩ,1% CRCW06031652F Vishay R2 10.0kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:LM2736
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com Figure26. LM2736X (1.6MHz) VBOOST Derivedfrom VSHUNT 18V to1.5V/750mA Table3.BillofMaterialsforFigure26 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736X TI C1, InputCap 10µF,25V,X7R C3225X7R1E106M TDK C2, OutputCap 22µF,6.3V,X5R C3216X5ROJ226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK C4, ShuntCap 0.1µF,6.3V,X5R C1005X5R0J104K TDK D1, CatchDiode 0.4VF Schottky1A,30VR SS1P3L Vishay D2, BoostDiode 1VF @ 50mA Diode 1N4148W Diodes,Inc. D3, ZenerDiode 5.1V250Mw SOT BZX84C5V1 Vishay L1 6.8µH, 1.6A, SLF7032T-6R8M1R6 TDK R1 2kΩ,1% CRCW06032001F Vishay R2 10kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay R4 4.12kΩ,1% CRCW06034121F Vishay
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www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 Figure27. LM2736X (1.6MHz) VBOOST Derivedfrom SeriesZener Diode (VIN) 15V to1.5V/750mA Table4.BillofMaterialsforFigure27 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736X TI C1, InputCap 10µF,25V,X7R C3225X7R1E106M TDK C2, OutputCap 22µF,6.3V,X5R C3216X5ROJ226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK D1, CatchDiode 0.4VF Schottky1A,30VR SS1P3L Vishay D2, BoostDiode 1VF @ 50mA Diode 1N4148W Diodes,Inc. D3, ZenerDiode 11V 350Mw SOT BZX84C11T Diodes,Inc. L1 6.8µH, 1.6A, SLF7032T-6R8M1R6 TDK R1 2kΩ,1% CRCW06032001F Vishay R2 10kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:LM2736
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com Figure28. LM2736X (1.6MHz) VBOOST Derivedfrom SeriesZener Diode (VOUT ) 15V to9V/750mA Table5.BillofMaterialsforFigure28 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736X TI C1, InputCap 10µF,25V,X7R C3225X7R1E106M TDK C2, OutputCap 22µF,16V,X5R C3216X5R1C226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK D1, CatchDiode 0.4VF Schottky1A,30VR SS1P3L Vishay D2, BoostDiode 1VF @ 50mA Diode 1N4148W Diodes,Inc. D3, ZenerDiode 4.3V350mw SOT BZX84C4V3 Diodes,Inc. L1 6.8µH, 1.6A, SLF7032T-6R8M1R6 TDK R1 61.9kΩ,1% CRCW06036192F Vishay R2 10kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay
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www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 LM2736Y CircuitExamples Figure29. LM2736Y (550kHz) VBOOST Derivedfrom VIN 5V to1.5V/750mA Table6.BillofMaterialsforFigure29 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736Y TI C1, InputCap 10µF,6.3V,X5R C3216X5ROJ106M TDK C2, OutputCap 22µF,6.3V,X5R C3216X5ROJ226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK D1, CatchDiode 0.3VF Schottky1A,10VR MBRM110L ON Semi D2, BoostDiode 1VF @ 50mA Diode 1N4148W Diodes,Inc. L1 10µH, 1.6A, SLF7032T-100M1R4 TDK R1 2kΩ,1% CRCW06032001F Vishay R2 10kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:LM2736
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com Figure30. LM2736Y (550kHz) VBOOST Derivedfrom VOUT 12V to3.3V/750mA Table7.BillofMaterialsforFigure30 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736Y TI C1, InputCap 10µF,25V,X7R C3225X7R1E106M TDK C2, OutputCap 22µF,6.3V,X5R C3216X5ROJ226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK D1, CatchDiode 0.34VF Schottky1A,30VR SS1P3L Vishay D2, BoostDiode 30V,200 mA Schottky BAT54 DiodesInc. L1 10µH, 1.6A, SLF7032T-100M1R4 TDK R1 16.5kΩ,1% CRCW06031652F Vishay R2 10.0kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay
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www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 Figure31. LM2736Y (550kHz) VBOOST Derivedfrom VSHUNT 18V to1.5V/750mA Table8.BillofMaterialsforFigure31 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736Y TI C1, InputCap 10µF,25V,X7R C3225X7R1E106M TDK C2, OutputCap 22µF,6.3V,X5R C3216X5ROJ226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK C4, ShuntCap 0.1µF,6.3V,X5R C1005X5R0J104K TDK D1, CatchDiode 0.4VF Schottky1A,30VR SS1P3L Vishay D2, BoostDiode 1VF @ 50mA Diode 1N4148W Diodes,Inc. D3, ZenerDiode 5.1V250Mw SOT BZX84C5V1 Vishay L1 15µH, 1.5A SLF7045T-150M1R5 TDK R1 2kΩ,1% CRCW06032001F Vishay R2 10kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay R4 4.12kΩ,1% CRCW06034121F Vishay Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:LM2736
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com Figure32. LM2736Y (550kHz) VBOOST Derivedfrom SeriesZener Diode (VIN) 15V to1.5V/750mA Table9.BillofMaterialsforFigure32 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736Y TI C1, InputCap 10µF,25V,X7R C3225X7R1E106M TDK C2, OutputCap 22µF,6.3V,X5R C3216X5ROJ226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK D1, CatchDiode 0.4VF Schottky1A,30VR SS1P3L Vishay D2, BoostDiode 1VF @ 50mA Diode 1N4148W Diodes,Inc. D3, ZenerDiode 11V 350Mw SOT BZX84C11T Diodes,Inc. L1 15µH, 1.5A, SLF7045T-150M1R5 TDK R1 2kΩ,1% CRCW06032001F Vishay R2 10kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay
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www.ti.com SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 Figure33. LM2736Y (550kHz) VBOOST Derivedfrom SeriesZener Diode (VOUT ) 15V to9V/750mA Table10.BillofMaterialsforFigure33 PartID PartValue PartNumber Manufacturer U1 750mA Buck Regulator LM2736Y TI C1, InputCap 10µF,25V,X7R C3225X7R1E106M TDK C2, OutputCap 22µF,16V,X5R C3216X5R1C226M TDK C3, BoostCap 0.01µF,16V,X7R C1005X7R1C103K TDK D1, CatchDiode 0.4VF Schottky1A,30VR SS1P3L Vishay D2, BoostDiode 1VF @ 50mA Diode 1N4148W Diodes,Inc. D3, ZenerDiode 4.3V350mw SOT BZX84C4V3 Diodes,Inc. L1 22µH, 1.4A, SLF7045T-220M1R3-1PF TDK R1 61.9kΩ,1% CRCW06036192F Vishay R2 10kΩ,1% CRCW06031002F Vishay R3 100kΩ,1% CRCW06031003F Vishay Copyright© 2004–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 23 ProductFolderLinks:LM2736
SNVS316F –SEPTEMBER 2004–REVISED APRIL 2013 www.ti.com
REVISION HISTORY
Changes from RevisionE (April2013)toRevisionF Page
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www.ti.com 11-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples LM2736XMK ACTIVE SOT DDC 6 1000 TBD Call TI Call TI -40 to 125 SHAB LM2736XMK/NOPB ACTIVE SOT DDC 6 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SHAB LM2736XMKX ACTIVE SOT DDC 6 3000 TBD Call TI Call TI -40 to 125 SHAB LM2736XMKX/NOPB ACTIVE SOT DDC 6 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SHAB LM2736YMK ACTIVE SOT DDC 6 1000 TBD Call TI Call TI -40 to 125 SHBB LM2736YMK/NOPB ACTIVE SOT DDC 6 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SHBB LM2736YMKX ACTIVE SOT DDC 6 3000 TBD Call TI Call TI -40 to 125 SHBB LM2736YMKX/NOPB ACTIVE SOT DDC 6 3000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SHBB (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
www.ti.com 11-Apr-2013 Addendum-Page 2 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 Pack Materials-Page 1
*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM2736XMK SOT DDC 6 1000 210.0 185.0 35.0 LM2736XMK/NOPB SOT DDC 6 1000 210.0 185.0 35.0 LM2736XMKX SOT DDC 6 3000 210.0 185.0 35.0 LM2736XMKX/NOPB SOT DDC 6 3000 210.0 185.0 35.0 LM2736YMK SOT DDC 6 1000 210.0 185.0 35.0 LM2736YMK/NOPB SOT DDC 6 1000 210.0 185.0 35.0 LM2736YMKX SOT DDC 6 3000 210.0 185.0 35.0 LM2736YMKX/NOPB SOT DDC 6 3000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 Pack Materials-Page 2
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