SS12G CHENDA | Alldatasheet
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The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 °C/10 seconds at terminals Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere Mechanical Data Case: JEDEC DO-214AC/SMA molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight : 0.0018 ounce, 0.064 grams Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum Ratings And Electrical Characteristics DO-214AC/SMA Dimensions in inches and (millimeters) 0.208(5.30) 0.067 (1.70) 0.051 (1.30) 0.177(4.50) 0.157(3.99) 0.1 10(2.80) 0.094(2.40) 0.060(1.52) 0.030(0.76) 0.188(4.80) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.42) 0.078(1.98) Parameter SYMBOLS SS12G SS13G SS14G SS15G SS16G SS18G SS110G SS1150G SS1200G UNITS Marking Code MDD SS12 MDD SS13 MDD SS14 MDD SS15 MDD SS16 MDD SS18 MDD SS110 MDD SS1150 MDD SS1200 Maximum repetitive peak reverse voltage VRMM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current at TL(see fig.1) I(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 25 A Maximum DCreverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 0.3 0.2 0.1 mA10.0 5.0 2.0 Typical junction capacitance (NOTE 1) CJ 110 80 pF Typical thermal resistance (NOTE 2) RJA 90.0 ℃/W Operating junction temperature range TJ -55 to +125 ℃ Storage temperature range TSTG -55 to +150 ℃ Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 3.The typica l data above is for reference only.
Rev:2019A0 Page :2 Typical Characterisitics The curve above is for r eference only. https://www.microdiode.com SS12G THRU SS1200G Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere Fig.4 Typical Junction Capacitance 0.1 Junction Capacitance (pF) Reverse Voltage (V) 100 200 1001 SS12/ SS14 SS16-SS1200 TJ=25°C Fig.1 F orward Current Derating Curve 0.5 1.0 1.5 0.0 25 50 75 100 125 150 Aver a ge Forward Current (A) Single phase half-wave 60 Hz resistive or inductive load 1001 Fig.5 Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Number of Cycles at 60Hz 8.3 ms Si ngle Half Sine Wave (JEDEC Method) Fig.2 Typical Reverse Characteristics Insta neous Reverse Current ( μ A) 20 40 6 0 800 TJ=25°C TJ=100° C Percent of Rated Peak Reverse Voltage（%） 100 10 0 101 10 2 10 3 10 4 TJ=75°C SS12/ SS14 SS16-SS1200 0.01 10 100 Fig.6- Typical Transient Thermal Impedance Trans ient Thermal Impedance（ °C/W） t, Pul s e Duration（sec） 0.1 1 10 Case T emperature (°C) 0.1 0 0.4 1.4 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 1.0 SS12/SS14 SS16/SS18 SS110/SS112 SS115/SS120
https://www.microdiode.com Rev:2019A0 Page :3 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). Suggested Pad Layout E B d F W PA D D1D2 C T Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing SS12G THRU SS1200G Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere Symbol Unit (mm) Unit (inch) A 1.68 0.066 B 1.52 0.060 C 3.90 0.154 D 2.41 0.095 E 5.45 0.215 SMA 7" 2,000 4.0 4,000 183*155*183 178 382*356*392 160,000 16.0 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) SMA 11" 5,000 4.0 10,000 290* 290*38 330 310*3 10*360 80,000 11.0 SMA 13" 7,500 4.0 15,000 335*335*38 330 350*330*360 120,000 14.5 unit:mm Item Symbol Tolerance SMA Carrier width A 0.1 2.80 Carrier length B 0.1 5.33 Carrier depth C 0.1 2.36 Sprocket hole d 0.05 1.50 13" Reel outside diameter D 2.0 330.00 13" Reel inner diameter D 1 min 50.00 7" Reel outside diameter D 2.0 178.00 7" Reel inner diameter D 1 min 62.00 Feed hole diameter D2 0.5 13.00 Sprocket hole position E 0.1 1.75 Punch hole position F 0.1 5.50 Punch hole pitch P 0.1 4.00 Sprocket hole pitch P0 0.1 4.00 Embossment center P1 0.1 2.00 Overall tape thickness T 0.1 0.28 Tape width W 0.3 12.00 Reel width W1 1.0 18.00