SS12F SEMIPOWER | Alldatasheet

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Technical content

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A PINNING PIN

DESCRIPTION

Simplified outline SMAF and symbol Top View Marking Code: SS12 — SS120 Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current Typical Junction Capacitance 20 40 V 14 28 V V 1.0 0.3 -55 ~ +150 A A V mA pF Typical Thermal Resistance °C/W Units Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SS12F SS14F SS16F SS18F SS110F SS112F SS115F SS120F T = 25°Ca T =100°Ca VRRM VRMS VDC IF(AV) IFSM VF IR RθJA Cj Tj Symbols TstgStorage Temperature Range 100 100 0.55 0.70 0.85 110 -55 ~ +150 °C 120 120 150 105 150 200 140 200 0.90 0.2 0.1

FEATURES

  • Metal silicon junction, majority carrier conduction
  • For surface mounted applications
  • Low power loss, high efficiency
  • High forward surge current capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA
  • Case: SMAF
  • Terminals: Solderable per MIL-STD-750, Method 2026
  • A 27mg 0 00095ozpprox. Weight: / . Page 1 of 3 1 2 SS12F THRU SS120F （2） （1） Measured at 1 MHz and applied reverse voltage of 4 V D.C （2） （1） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

Fig.1 Forward Current Derating Curve 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 Average Forward Current (A) Single phase half-wave 60 Hz resistive or inductive load 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ /W）°C t, Pulse Duration（sec） 0.1 1 10 1000 Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C Fig.4 Typical Junction Capacitance 0.1 Junction Capacitance ( pF) Reverse Voltage (V) 100 200 500 1001 SS12F/SS14F SS16F-SS120F T =25J °C 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) SS12F-SS18F SS110F-SS120F 0.1 0 0.4 1.4 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 1.0 SS12F/SS14F SS16F/SS18F SS110F/SS112F SS115F/SS120F Page 2 of 3 Case Temperature (°C) SS12F THRU SS120F Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

Plastic surface mounted package; 2 leads SMAF A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ∠ALL ROUND E D A E pad pad The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ：mm (mil) SS12F THRU SS120F Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0