SS12F_V01 CHENDA | Alldatasheet
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The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications M etal silicon junction,majority carrier conduction Low power loss,high efficiency B uilt-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260 °C/10 seconds at terminals Dimensions in inches and (millimeters) Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere SMAF 0.193(4.90) 0.173(4.40) 0.047(1.20) 0.031(0.80) 0.008(0.20) 0.005(0.12) 0.047(1.20) 0.035(0.90) 0.146(3.70) 0.130(3.30) 0.063 (1.60) 0.051 (1.30) 0.106(2.70) 0.094(2.40) Mechanical Data Case: JEDEC SMAF molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight : 0.0018 ounce, 0.064 grams Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum Ratings And Electrical Characteristics Parameter SYMBOLS SS12F SS13F SS14F SS15F SS16F SS18F SS110F SS1150F SS1200F UNITS Marking Code MDD SS12F MDD SS13F MDD SS14F MDD SS15F MDD SS16F MDD SS18F MDD SS110F MDD SS1150F MDD SS1200F Maximum repetitive peak reverse voltage VRMM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current at TL(see fig.1) I(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 30 A Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 0.5 0.2 mA10.0 5.0 2.0 Typical junction capacitance (NOTE 1) CJ 110 90 pF Typical thermal resistance (NOTE 2) RJA 88.0 ℃/W Operating junction temperature range TJ -55 to +125 ℃ Storage temperature range TSTG -55 to +150 ℃ 3.The typical data above is for reference only.
Rev:2019A0 Page :2 Typical Characterisitics The curve above is for reference only. https://www.microdiode.com SS12F THRU SS1200F Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 175 0.1 1.0 10 100 0.01 0.1 1 10 100 100 0.1 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. FIG. 5-TYPICAL JUNCTION CAPACITANCE FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE NUMBER OF CYCLES AT 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG. 1- FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERESJUNCTION CAPACITANCE, pF PEAK FORWARD SURGE CURRENT, AMPERES 1 10 100 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 200 400 0 20 40 60 80 100 100 0.1 0.01 0.001 TJ=75 C TJ=25 C TJ=100 C PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES TRANSIENT THERMAL IMPEDANCE, C/W AMBIENT TEMPERATURE, C SS12F-SS16F SS18F-SS1200F Single Phase Half Wave 60Hz Resistive or inductive Load FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ=25 C SS12F-SS14F SS15F-SS1200F 10.0 0.1 0.01 SS12F-SS14F SS15F-SS16F SS18F-SS1150F TJ=25 C SS1200F
https://www.microdiode.com Rev:2019A0 Page :3 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). Suggested Pad Layout 0.087 0.213 Symbol Unit (mm) A C D 0.063 5.4 2.2 E B Unit (inch) 0.150 1.6 0.0711.8 E B d F W PA D D1D2 C T Item Tolerance SMAF Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width P E B C d F T W P A D D Reel width W1 Symbol 0.1 0.1 0.1 min 0.5 0.1 0.3 1.0 0.1 0.05 0.1 0.1 0.1 0.1 2.0 unit:mm 1.50 178.00 54.40 13.00 1.75 5.05 4.00 4.00 2.00 0.30 8.00 12.30 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 2.80 4.75 1.42 Reel packing SMAF 7" 3,000 4.0 6,000 210 *208 *203 178 400*265 *400 120,000 10.0 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) 3.8 SS12F THRU SS1200F Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere