SS12F YFWDIODE | Alldatasheet

Document overview

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Technical content

SSuurrffaaccee MMoouunntt SScchhoottttkkyy BBaarrrriieerr RReeccttiiffiieerr RReevveerrssee VVoollttaaggee -- 2200 ttoo 220000 VV FFoorrwwaarrdd CCuurrrreenntt -- 11..00 AA PPIINNNNIINNGG PIN

DESCRIPTION

Simplified outline SMAF and symbol Top View Marking Code: SS12 — SS120 Maximum DC Blocking Voltage PPaarraammeetteerr Maximum Repetitive Peak Revers e Voltage Maximum RMS voltage Maximum Average Forward Rectified Current 1）Typical Junction Capacitance 20 40 V 14 28 V V 1.0 0.3 115 -55 ~ +125 A A V mA pF Typical Thermal Resistance °C/W UUnniittss AAbbssoolluuttee MMaaxxiimmuumm RRaattiinnggss aanndd EElleeccttrriiccaall cchhaarraacctteerriissttiiccss Ratings at ambient temperature unless otherwise specified.Sing le phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forwar d Voltage at 1 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range SSSS1122FF SSSS1144FF SSSS1166FF SSSS1188FF SSSS111100FF SSSS111122FF SSSS111155FF SSSS112200FF T = 25 °Ca T =100 °Ca VRRM VRMS VDC IF(AV) IFSM VF IR RθJA Cj Tj SSyymmbboollss TstgStorage Temperature Range 100 100 0.55 0.70 0.85 110 -55 ~ +150 °C 1） Measured at 1MHz and applied reverse voltage o f 4 V D.C. 120 120 150 105 150 200 140 200 0.90 0.2 0.1 SSSS1122FF TTHHRRUU SSSS112200FF

FEATURES

  • Metal silicon junction, majority carrier conduction
  • For surface mounted applications
  • Low power loss, high efficiency
  • High forward surge current capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA
  • Case: SMAF
  • Terminals: Solderable per MIL-STD-750, Method 2026
  • A 27mg 0 00086ozpprox. Weight: . 1 2

SSSS1122FF TTHHRRUU SSSS112200FF FFiigg..11 FFoorrwwaarrdd CCuurrrreenntt DDeerraattiinngg CCuurrvvee 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 Average Forward Current (A) Ambient Temperature ( °C) Single phase half-wave 60 Hz resistive or inductive load 0.01 100 100 FFiigg..66-- TTyyppiiccaall TTrraannssiieenntt TThheerrmmaall IImmppeeddaannccee Transient Thermal Impedance （ /W）°C t, Pulse Duration （sec） 0.1 1 10 1000 FFiigg..22 TTyyppiiccaall RReevveerrssee CChhaarraacctteerriissttiiccss Instaneous Curren t ( μA)Reverse 20 40 60 800 T= 2 5J °C T =100J °C Percent of Rated Peak Reverse Voltage （%） 100 10 0 101 10 2 10 3 10 4 T= 7 5J °C FFiigg..44 TTyyppiiccaall JJuunnccttiioonn CCaappaacciittaannccee 0.1 Junction Capacitance ( p F ) Reverse Voltage (V) 100 200 500 1001 SS12F/SS14F SS16W-SS120F T= 2 5J °C 10 100 FFiigg..55 MMaaxxiimmuumm NNoonn--RReeppeettiittiivvee PPeeaakk FFoorrwwaarrdd SSuurraaggee CCuurrrreenntt Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) SS12F-SS18F SS110F-SS120F 0.1 0 0.4 1.4 FFiigg..33 TTyyppiiccaall FFoorrwwaarrdd CChhaarraacctteerriissttiicc Instaneous Forward Curren t (A) Instaneous Forwar d Voltage (V) 1.0 SS12F/SS14F SS16F/SS18F SS110F/SS112F SS115F/SS120F

PPAACCKKAAGGEE OOUUTTLLIINNEE PPllaassttiicc ssuurrffaaccee mmoouunntteedd ppaacckkaaggee;; 22 lleeaaddss SSMMAAFF A CC ∠ALL ROUND V AM e UNIT mm max min mil max min 9.1 7.1 146 130 106 193 173 ACDE HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.3 1.0 g g ∠ALL ROUND E D A E pad pad SSSS1122FF TTHHRRUU SSSS112200FF MMaarrkkiinngg Type number Marking code SS12F SS14F SS16F SS12 SS18F SS110F SS112F SS115F SS120F SS14 SS16 SS18 SS110 SS112 SS115 SS120 TThhee rreeccoommmmeennddeedd mmoouunnttiinngg ppaadd ssiizzee Unit ：mm(mil) 2.8(110)1.6(63) 1.8(71) 1.6(63)