SS12 SSC | Alldatasheet
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Schottky Barrier Rectifiers 12/12/2007 Rev.1.00 www.SiliconStandard.com 1 SS12 thru SS115 PRODUCT SUMMARY 1.0AMP Surface Mount
FEATURES
For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current cap ability Plastic material used carriers Underwriters Laboratory Classification 94V- 0 Epitaxial construction High temperature soldering: 260 oC / 10 seconds at terminals MECANICAL DATA Case: JEDEC SMA/DO- 214AC Molded plastic Terminals: Pure t in plated, lead free Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS- 481 Weight: 0.066 gram Dimensions in inches and (millimeters) SMA/DO-214AC Pb-free; RoHS-compliant
12/12/2007 Rev.1.00 www.SiliconStandard.com 2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SS SS SS SS SS SS SS 110 SS 115 Units Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 150 V Maximum RMS Voltage VRMS 14 21 28 35 42 63 70 105 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 90 100 150 V Maximum Average Forward Rectified Current at TL(See Fig. 1) I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage (Note 1) I F= 1.0A @ 25 o C @ 100 oC VF 0.5 0.4 0.75 0.65 0.80 0.70 0.95 0.85 V 0.4 0. 1 Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=125 oC IR 10 5. 0 2.0 mA mA Maximum DC Reverse Current at VR=33V & TA=50 oC HTIR - 5.0 uA Typical Junction Capacitance (Note 3) Cj 5 0 pF Typical Thermal Resistance ( Note 2 ) R ΘJL R θJA oC/W Operating Temperature Range TJ -65 to +125 -65 to +150 oC Storage Temperature Range TSTG -65 to +150 oC Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. SS12 thru SS115
12/12/2007 Rev.1.00 www.SiliconStandard.com 3 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. RATINGS AND CHARACTERISTIC CURVES SS12-SS14 SS15-SS16 SS19-SS115 Tj=25 C f=1.0MHz Vsig=50mVp-p Tj=125 C0 Tj=25 C O Tj=75 C0 SS12-SS14 SS15-SS115 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FOR W ARD SURGE CURRENT .(A) 1 10 100 NUMBER OF CYCLES AT 60Hz AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FOR W ARD CURRENT .(A) 50 60 70 80 90 100 110 120 170160150140130 0.5 1.0 LEAD TEMPERATURE. ( C) o RESISTIVE OR INDUCTIVE LOAD SS15-SS115 SS12- SS14 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS FIG.3- TYPICAL FORWARD CHARACTERISTICS INST ANT ANEOUS FOR W ARD CURRENT .(A) 0.01 0.1 FORWARD VOLTAGE. (V) FIG.4- TYPICAL REVERSE CHARACTERISTICS INST ANT ANEOUS REVERSE CURRENT m 0 20 40 60 80 100 120 1400.001 0.01 0.1 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE JUNCTION CAP ACIT ANCE.(pF) 0.1 1.0 10 100 100 400 REVERSE VOLTAGE. (V) PULSE WIDTH=300 S 1% DUTY CYCLE FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE. (C/W)O 10.01 0.1 10 100 100 0.1 T, PULSE DURATION. (sec) SS12-SS14 SS19-SS110 SS15-SS16 SS115