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! Schottk y Barrier Chip ! Low Power Loss, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical Da ta ! T erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Rat ings and Electrical Characteristics @TA=25°C unl ess otherwise specified 1 of 2 SS12W – SS1200W 1.00.2 2.80.1 1.9± 0.1 Cat hode Band Top View 3.70.2 0.60.25 1.4± 0. 0.10-0.30 SOD - 123FL Dimensions in millimeters Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Typi cal Junction Capacitance 0.55 0.70 0.85 0.95 V 1.0 A 14 21 28 35 42 56 70 105 140 V 20 30 40 50 60 80 100 150 200 V Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Average Rec tified Output Current @T L = 75°C IO Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 20 A Forward V oltage @I F = 1 .0A V FM Peak Revers e Current @T A = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.5 20 mA R/G01JL R/G01JA 88 °C/W Operat ing T emperature Range Tj -65 to +125 °C S torage T emperature Range TSTG -65 to +150 °C Typi cal Thermal Resistance (Note 1) jC 110 30 110 pF Cha racteristic Alldatasheet
0.01 0.1 1.0 0 0.4 0.8 1.2 I, INST ANTANEOUS FORWARD CURRENT (A) F V , INSTA NTANEOUS FWD VOLTAGE (V) Fig. 2 Typ. Forward Characteristics F T - 25ºCj I Pulse Width = 300 sF µ 100 1000 0.1 1 10 100 C , JUNCTION CAP ACITANCE (pF) j V , REVERSE VOL T AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C
1 MHz
j 0 20 40 60 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100ºCj T = 75ºCj T = 25ºCj 100 1.0 0.1 0.01 0.001 1.0 25 50 75 100 125 150 I A VERAGE FOR WARD CURRENT (A) (AV), T, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L 2 of 2 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A)FSM NUMBER OF CYCLES A T 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) T =
100 Cj °
SS12W – SS1200W 12 - 14 15 - 16 18 - 110 SS12 – SS1200W Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 1150 - 1200 Alldatasheet