SS12T LUGUANG | Alldatasheet

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Dimensions in inches and (millimeters) Features■ ■ Mechanical data ■ Maximum ratings and electrical characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. O CElectrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(SS12AL~SS16AL). standard >10ΚV(SS110AL~SS120AL). Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix

  • "H" indicates Halogen-free part, ex.SS12TH.
  • Lead-free parts meet environmental standards of MIL- STD-19500 /228 SMA(DO-214AC)
  • Case : Molded plastic, DO-214AC / SMA
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity : Indicated by cathode band
  • Weight : 0.002 ounce, 0.055 gram
  • Epoxy:UL94-V0 rated flame retardant Marking code 0.09 8 (2.50 ) 0.06 7 (1.70 ) 0.06 7 (1.70 ) 0.04 7 (1.20 ) 0.114 (2.90 ) 0.08 3 (2.10 ) 0.18 1 (4.60 ) TYP. 0.22 4 (5.70 ) 0.18 5 (4.70 ) 0.06 1 (1.55 ) 0.03 0 (0.75 ) 0.008 (0.2 0) 0.004 (0.1 0) http://www.l gesem i.com mail:lge@lgesemi.comRevision:20181014-P1 SS SS SS SS SS Type Numger Symbol 12T 14 T 16 T 110T 120T UNITS Maximum Recurrent Peak Reverse Voltage V RRM 20 40 60 100 200 V Maxium RMS Voltage VRMS 14 28 42 70 140 V Maxium DC Blocking Voltage V DC 20 40 60 100 200 V Average Rectified Output Current (Note 1) @T L=100℃ IF(AV) 1.0 A Peak forward surge current:8.3ms single half-sine-wave IFSM 30 A superimposed on rated load (JEDEC Method) Peak Reverse Current @TA=25 ℃ IR 0.5 mA At Rated DC Blocking Voltage @TA=100℃ IR 20 mA Typical Junction Capacitance (Note 2) CJ 120 pF Typical Thermal Resistance Junction toAmbient(Note 1) RθJA 25 ℃/W Operating Temperature Range TJ -55 to +150 ℃ Storage Temperature Range T STG -55 to +150 ℃ Note: 1.Leads maintained at ambient temperature at a distance of 9.5mm from the case. 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. mensions in inches and (millimeters) SS 1 15T 150 105 150 -55 to +175S S12T-SS120T 1.0AMP. Low VF Schottky Barrier Rectifiers

■ Rating and characteristic curves 0.1 1.0 .01 FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.4-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,(V) JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) FORWARD VOLTAGE,(V) Pulse Width 300us 1% Duty Cycle 0.2 0.4 0.6 0.8 1.0 1.2 350 300 250 200 150 100 .01 .05 .1 .5 1 5 10 50 100 3.0 1.0 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE LEAKAGE CURRENT, (mA) 0 20 40 60 80 100 120 140 .01 T =125 J O CSS12T~SS1 10TSS16T SS12T~SS14T T =25J O C T =25J O CAMBIENT TEMPERATURE,( C) 0 20 40 60 80 100 120 140 160 180 200 FIG.2-TYPICAL FORWARD CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz SS115T~SS120TSS1 15T~SS120T 1 10 5 50 100 O T =25 CJ 8.3ms Single Half Sine Wave JEDEC method PEAK FORWARD SURGE CURRENT,(A) http://www.lgesem i.com mail:lge@lgesemi.comRevision:20181014-P2S S12T-SS120T 1.0AMP. Low VF Schottky Barrier Rectifiers SS110T

■ SMA foot print Dimensions in inches and (millimeters) A C B B 0.104 (2.60) A 0.068 (1.70) C 0.060 (1.50) PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG SMA 5000/REEL 80000 36X30.6X31 12.00 11.00 http://www.lgesem i.com mail:lge@lgesemi.comRevision:20181014-P3S S12T-SS120T 1.0AMP. Low VF Schottky Barrier Rectifiers