SS12P4C VISHAY | Alldatasheet
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Document Number: 89141 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 13-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Barrier Rectifier SS12P4C Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications.
FEATURES
- Very low profile - typical height of 1.1 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency Low thermal impedance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area PRIMARY CHARACTERISTICS IF(AV) 2 x 6.0 A VRRM 40 V IFSM 150 A EAS 20 mJ VF at IF = 6.0 A 0.40 V TJ max. 125 °C TO-277A (SMPC) K Anode 1 Anode 2 Cathode K eSMP TM Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS12P4C UNIT Device marking code S124C Maximum repetitive peak reverse voltage V RRM 40 V Maximum average forward rectified current (fig. 1) (1) total device IF(AV) 12 A per diode 6.0 Maximum average forward rectified current (2) total device I F(AV) 3.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Non-repetitive avalanche energy at T J = 25 °C, L = 60 mH per diode EAS 20 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, at TJ = 25 °C per diode IRRM 1.0 A Operating junction and storage temperature range T J, TSTG - 55 to + 125 °C
www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 89141 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS12P4C Vishay General Semiconductor New Product Notes (3) Pulse test: 300 µs pulse width, 1 % duty cycle (4) Pulse test: Pulse width 40 ms Notes (1) Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient. (2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance RJM - junction to mount. Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Notes Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink, T M measured at the terminal of cathode band (RJM = 3 °C/W) Free air, mounted on recommended copper pad area (RJA = 100 °C/W) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Instantaneous forward voltage per diode I F = 1 A TA = 25 °C VF (1) 0.34 - V IF = 3 A 0.40 - IF = 6 A 0.46 0.52 IF = 1 A TA = 100 °C 0.24 - IF = 3 A 0.31 - IF = 6 A 0.40 0.45 Reverse current per diode Rated V R TA = 25 °C IR (2) 129 500 µA TA = 100 °C 11.9 25 mA Typical junction capacitance per diode 4.0 V, 1 MHz C J 400 - pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS12P4C UNIT Typical thermal resistance R JA (1) 100 °C/WRJM (2) 3 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS12P4C-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel SS12P4C-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS12P4CHM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS12P4CHM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel 0 25 50 75 125 150 DC Fo rward C urrent (A) Ambient Temperature (°C) 100 TM = 100 °C (1) TA = 25 °C (2)
Document Number: 89141 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 13-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS12P4C Vishay General Semiconductor New Product Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient IThermal mpedance Per Diode D = 0.5 Average Forward Current (A) Average Po wer Loss ( W 0 1 2 3 4 5 6 7 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 D = tp/T t p T D = 1.0 D = 0.8 D = 0.1 D = 0.2 D = 0.3 0.1 100 Instantaneous Forward Voltage (V) Instantaneo us For ward C urrent (A) TA = 25 °C TA = 125 °C TA = 100 °C 0.01 100 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Instantaneo us Re verse C urrent (mA) 0.1 TA = 125 °C TA = 100 °C TA = 25 °C 100 1000 10 000 0.1 1 10 100 Reverse Voltage (V) Junction Capaci tance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 100 1000 10 000 0.1 1 10 100 Reverse Voltage (V) Junction Capacitance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p
www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 89141 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS12P4C Vishay General Semiconductor New Product PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Conform to JEDEC TO-277A TO-277A (SMPC) 0.016 (0.40) 0.006 (0.15) 0.047 (1.20) 0.039 (1.00) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) 0.173 (4.40) 0.049 (1.24) 0.037 (0.94) 0.053 (1.35) 0.041 (1.05) 0.030 (0.75) NOM. 0.084 (2.13) NOM. 0.155 (3.94) NOM. Mounting Pad Layout 0.268 (6.80) 0.186 (4.72) MIN. 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. 0.189 (4.80) MIN. 0.187 (4.75) 0.175 (4.45) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 0.171 (4.35) 0.167 (4.25) K
Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1 Disclaimer Legal Disclaimer Notice Vishay ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA AR E SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of pro ducts for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in gene ric applications. Such statements are not binding statements about the suitability of products for a partic ular application. It is the customer’s responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. Parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s term s and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product co uld result in person al injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.