SS12L_14 TSC | Alldatasheet

Document overview

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Technical content

  • Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test 12L 13L 14L 15L 16L 19L 10L A5L V RRM 20 30 40 50 60 90 100 150 V VRMS 14 21 28 35 42 63 70 105 V VDC 20 30 40 50 60 90 100 150 V IF(AV) A 8.0 dV/dt V/ μs TJ OC TSTG OC Document Number: DS_D1308028 Version: N13 SS12L thru SS115L Taiwan Semiconductor Surface Mount Schottky Barrier Rectifier

FEATURES

  • Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: Sub SMA Sub SMA Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Polarity: Indicated by cathode band Weight: 0.019 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) Marking code SS 15L SS 16L SS 19L 0.4 0.05 Maximum average forward rectified current 1 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 Typical thermal resistance RθJL RθJA 100 OC/W Maximum instantaneous forward voltage (Note 1) @ 0.5A @ 1.0A V F V Maximum reverse current @ rated VR TJ=25 ℃ TJ=100 ℃ TJ=125 ℃ IR mA Operating junction temperature range Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle PARAMETER SYMBOL SS 12L SS 13L SS 14L Voltage rate of change (Rated VR) SS 110L SS 115L UNIT 0.385 0.45 0.43 0.50 0.51 0.55 0.58 0.70 0.70 0.80 0.75 0.90 A 6.0 - - 0.5 - 55 to +125 - 55 to +150 10000

PART NO. PART NO. SS16L SS16L SS16L (TA=25℃ unless otherwise noted) Document Number: DS_D1308028 Version: N13 PACKAGE RT Sub SMA 7,500 / 13" Plastic reel (8mm tape) RU Suffix "G" Sub SMA RQ R3 Sub SMA RF Sub SMA 1,800 / 7" Plastic reel (12mm tape) PREFERRED P/N R2 Sub SMA M2 Sub SMA Sub SMA MQ Sub SMA RATINGS AND CHARACTERISTICS CURVES SS16L RUG SS16LHRU H RU RV Sub SMA MT Sub SMA 10,000 / 13" Plastic reel (8mm tape) PACKING 7,500 / 13" Paper reel (8mm tape) 7,500 / 13" Paper reel (12mm tape) SS1XL (Note 1) 1,800 / 7" Plastic reel (8mm tape) MH 3,000 / 7" Plastic reel (12mm tape) 10,000 / 13" Paper reel (8mm tape) PACKING CODE GREEN COMPOUND CODE Prefix "H" PACKING CODE Taiwan Semiconductor 10,000 / 13" Plastic reel (12mm tape) 10,000 / 13" Paper reel (12mm tape) 7,500 / 13" Plastic reel (12mm tape) RH Sub SMA 3,000 / 7" Plastic reel (8mm tape)

DESCRIPTION

ORDERING INFORMATION

Note 1: "x" defines voltage from 20V (SS12L) to 150V (SS115L) AEC-Q101 QUALIFIED G Sub SMA AEC-Q101 qualified GREEN COMPOUND CODE AEC-Q101 QUALIFIED Green compound 0.2 0.4 0.6 0.8 1.2 0 25 50 75 100 125 150 AVERAGE FORWARD CURRENT (A) LEAD TEMPERATURE (oC) FIG.1 FORWARD CURRENT DERATING CURVE SS12L-SS14L SS15L-SS115L 1 10 100 PEAK FORWARD SURGE CURRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 2 MAXUMUM FORWARD SURGE CURRENT 8.3ms Single Half Sine-Wave 0.1 100 1000 10000 0 20 40 60 80 100 120 140 INTANTANEOUS REVERSE CURRENT. (uA) PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FIG. 4 TYPICAL REVERSE CHARACTERISTICS TJ=25℃ TJ=75℃ TJ=100℃ 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 3 TYPICAL FORWARD CHARACTERISTICS SS13L-SS14L SS12L SS15L-SS16L SS115L SS19L-SS110L

B 1.70 1.90 0.067 0.075 C 2.70 2.90 0.106 0.114 D 0.16 0.30 0.006 0.012 E 1.23 1.43 0.048 0.056 F 0.80 1.20 0.031 0.047 G 3.40 3.80 0.134 0.150 H 2.45 2.60 0.096 0.102 I 0.35 0.85 0.014 0.033 J 0.00 0.10 0.000 0.004 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1308028 Version: N13 SS12L thru SS115L Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) SUGGESTED PAD LAYOUT Symbol Unit (mm) A1 . 4 B1 . 2 Unit (inch) 0.055 0.047 0.122 0.075 0.169 MARKING DIAGRAM C3 . 1 D1 . 9 E4 . 3 100 1000 0.1 1 10 100 JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vslg=50mVp-p 0.1 100 0.01 0.1 1 10 100 TRANSIENT THERMAL IMPEDANCE (℃/W) T-PULSE DURATION(s) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE

assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308028 Version: N13 SS12L thru SS115L Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,