SS12G UNSEMI | Alldatasheet

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 Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications  Case: SMA  Quantity Per Reel : 2,000pcs  Approx. Weight : 60mg / 0.0021oz  Terminals: Solderable per MIL-STD-750, Method 2026 1ğCathode 2ğAnode Parameter Symbol SS12G SS14G SS16G SS18G SS110G SS112G SS115G SS120G Units VRRM VRMS VDC IF(AV) VF IR IR Cj RθJA TJ Tstg V V V A V pF ℃/W Ta=25℃ Ta=100℃ č1Ď Note:(1) Measured at 1 MHz and applied reverse voltage of 4VDC. Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Max Instantaneous Forward Voltage at 1A Typical Junction Capacitance Typical Thermal Resistance Operating Junction Temperature Range Storage Temperature Range 100 100 120 120 150 105 150 200 140 200 SMA Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Maximum DC Reverse Current at Rated DC Reverse Voltage č2Ď IFSM A 1.0 0.55 0.70 0.85 0.90 0.2 5.0 0.1 2.0 0.3 -55 ~ +150 -55 ~ +150 110 mA Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%. Maximum Average Forward Rectified Current at Tc=100℃

Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.2/3 SS12G~SS120G Surface Mount Schottky Barrier Rectifier Electrical Characteristics Curves Fig. 2 Typical Reverse CharacteristicsFig.1 Forward Current Derating Curve Fig. 4 Typical Junction CapacitanceFig.3 Typical Forward Characteristic Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig. 6 Typical Transient Thermal Impedance 0.5 1.0 1.5 25 50 75 100 125 150 Average Forward Current (A) Case Temperature (°C) Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C T =100J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C SS12G/SS14G SS16G ~SS120G 0.1 0 0.4 1.4 Instaneous Forward Current (A) Instaneous Forward Voltage (V) 1.0 SS12G /SS14G SS16G /SS18G SS110G /SS112 SS115G /SS120 0.1 Junction Capacitance ( pF) Reverse Voltage (V) 100 200 500 1001 SS12G /SS14G SS16G ~SS120G T =25J °C 10 1001 Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 0.01 100 100 t, Pulse Duration（sec） 0.1 1 10 Transient Thermal Impedance（ /W）°C Single phase half-wave 60Hz resistive or inductive load

Revision March 1,2022 www.unsemi.com.tw Surface Mount Schottky Barrier Rectifier ROHS For technical questions, contact: tech@unsemi.com.tw Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.3/3 SS12G~SS120G Package Outline & Dimensions Marking Dimensions Min. Max. Max.Min. Inches Type Number Type Number SS120GSS12G SS14G SS16G SS18G SS110G SS112G SS115G Millimeters Cathode Band A B C D E F G H I J K L DO-214AC (SMA) 0.049 0.162 0.099 0.077 0.030 0.192 0.006 0.070 0.082 0.082 0.064 0.179 0.109 0.089 0.060 0.008 0.206 0.012 0.090 1.230 4.10 2.510 1.960 0.750 4.87 0.152 1.800 2.100 2.100 1.630 4.550 2.760 2.260 1.510 0.203 5.220 0.305 2.300 Making SS12 SS14 SS16 SS18 SS110 SS112 SS120SS115

Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Disclaimer ROHS UNSEMI RESERVES THE RIGHT TO MAKE CHANGE ON OUR PRODUTS , PRODUCTS SPECIFICATION AND DATA WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. UN SEMICONDUCTOR LIMITED its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “UNSEMI”)does not give any representations or warranties for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. In no event shall UNSEMI be liable for any indirect, incidental, punitive, special or consequential damages (including any and all implied warranties, warranties of fitness for particular purpose, non-infringement and merchantability.) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Statements regarding the suitability of products for certain types of applications are based on UNSEMI knowledge of typical requirements that are often placed on UNSEMI products in generic applications. Such statements are not binding, statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify UNSEMI's terms and conditions of purchase, including but not limited to the warranty expressed therein. Unless otherwise agreed in writing, UNSEMI product is not designed, authorized or warranted to be suitable for use in medical life-saving, or life-sustaining application , nor in applications where failure or malfunction of a UNSEMI product can reasonably be expected to result in personal injury, death or severe property or environmental damage. UNSEMI and its suppliers accept no liability for inclusion or use of UNSEMI products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. All referenced brands, product names, service names and trademarks are the property of their respective owners.