SS12_1 TSC | Alldatasheet
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/cuspopen For surface mounted application /cuspopen Metal to silicon rectifier, majority carrier conduction /cuspopen Low forward voltage drop /cuspopen Easy pick and place /cuspopen High surge current capability /cuspopen Plastic material used carriers Underwriters Laboratory Classification 94V-O /cuspopen Epitaxial construction /cuspopen High temperature soldering: 260oC/ 10 seconds at terminals Mechanical Data /cuspopen Case: Molded plastic /cuspopen Terminals: Solder plated /cuspopen Polarity: Indicated by cathode band /cuspopen Packaging: 12mm tape per EIA STD RS-481 /cuspopen Weight: 0.064 gram SMA/DO-214AC Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unle ss otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SS SS SS SS SS SS SS 110 Units Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 V Maximum RMS Voltage VRMS 14 21 28 35 42 63 70 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 90 100 V Maximum Average Forward Rectified Current at TL(See Fig. 1) I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A VF 0.5 0.75 0.80 V 0.4 0.05 Maximum DC Reverse Current @ T A =25℃ at Rated DC Blocking Voltage @ T A=100℃ IR 10 5.0 0.5 mA mA Maximum DC Reverse Current at VR=33V & TA=50℃ HTIR - 5.0 uA Typical Junction Capacitance (Note 3) Cj 50 pF Typical Thermal Resistance (Note 2) RθJL RθJA ℃/W ℃/W Operating Temperature Range TJ -65 to +125 -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
-5 3- RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS110) FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FOR WARD SURGE CURRENT . (A) 1 10 100 NUMBER OF CYCLES AT 60Hz AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FOR WARD CURRENT . (A) 50 60 70 80 90 100 110 120 170 160150140130 .50 1.0 LEAD TEMPERATURE. ( C) o RESISTIVE OR INDUCTIVE LOAD SS15-SS110SS12- SS14 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS FIG.3- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FOR WARD CURRENT . (A) 0.01 0.1 10.0 FORWARD VOLTAGE. (V) Tj=125 C0 Tj=25 C0 PULSE WIDTH=300 S 1% DUTY CYCLE SS12-SS14 SS15-SS16 SS19-SS110 Tj=150 C0 FIG.4- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT . (mA) 0 20 40 60 80 100 120 1400.001 0.01 0.1 100 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=125 C0 Tj=25 C O Tj=75 C0 SS12-SS14 SS15-SS110 FIG.5- TYPICAL JUNCTION CAPACITANCE JUNCTION CAP ACITANCE.(pF) .1 1.0 10 100 100 400 REVERSE VOLTAGE. (V) SS12-SS14 SS15-SS16 SS19-SS110 Tj=25 C f=1.0MHz Vsig=50mVp-p C, CAP ACITANCE (pF) 160 140 120 100 04 8 1 2 1 6 2 0 2 4 2 8 3 2 VR , REVERSE VOLTAGE (VOLTS) 36 40 180 200 NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF FIG.6- TYPICAL CAPACITANCE