SS1020F KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Dio des Schottky Diodes SS1020F ~ SS10100F ■ Features
- Fast switching speed
- Low power loss, high efficieucy
- Surface mount package ideally suited for autonatic insertion SOD-123F Unit:mm 0.8± 0.1 2.8 ± 0.1 1.85 ± 0.1 Cathode Band Top View 3.7 ± 0.1 0.65 0.1 ± 1.20 ~ 1.35 0.20 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol SS1020F SS1030F SS1040F SS1060F SS10100F Unit Repetitive Peak Reverse Voltage VRRM Reverse Breakdown Voltage @ IR =500μA VBR Reverse Voltage VR Forward Voltage Ta=65℃ VF 0.7 0.85 Averaged Forward Current.Ta=75℃ IFAV Peak Forward Surge Current @ t=8.3ms IFSM Reverse Voltage Leakage Current IR μA Typical Junction Capacitance Cj 50 40 pF Junction Temperature Tj Storage Temperature Tstg 125 -55 to 125 A 500 0.55 20 30 40 V 60 100 ■ Marking NO. SS1020F SS1030F SS1040F SS1060F SS10100F Marking G2 G3 G4 G6 G10
www.kexin.com.cn2 Diod es Schottky Diodes SS1020F ~ SS10100F ■ Typical Characterisitics 0 25 50 75 100 125 150 175 0.75 0.5 0.25 LEA D TEMPER ATURE , C O D EIFITI C E R D R A W R OF E G A R E VA S E R E P M A T N E R R U C 0 20 40 60 0.1 REVERS E VOLTAGE, V (V)R A ,TNERRUC ESREVER SINGL E PHAS E HAL F WAVE 60H z RESTSTIV E OR INDUCTIV E LOA D P.C. B MOUNTE D ON 0.2x0. 2 (5.0x5.0mm ) COPPE R PAD AREA S TJ 75 C O TJ 25 C O FIG . 1-FO RWARD CURREN T DER ATIN G CURVE FIG . 2-TYPICA L REVERS E CHARACTERISTI C FIG . 4-TYPICA L INS TANTANEOU S FORWARD CHARACTERISTIC S SUOENATNATSNI TNERRUC DRAWROF SEREP MA INS TANTANEOU S FORWARD VOLTAGE ,VOLTS 0.1 1.0 T = 25 C Puls eWidt h= 300 s 1%Dut y Cycl e J O m 20-40 V 60V V ,REVERS E VOLTAGE(VO LTS)R CAPACITANCE,(pF) 0 10 20 30 40 1000 100 0.1 T =25 CJ O FIG.3 -TYPICA L JUNCTIO N CHATACTERISTI C 20 - 40V 60V 100V 100 V TJ 125 C O