SRM3HF SSDI | Alldatasheet

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Technical content

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number / Ordering Information 1/ └ Screening2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level └ Package Type __ = Axial SMS = Surface Mount Square Tab BTR = Button └ Voltage 3 = 300 V 4 = 400 V SRM3HF thru SRM4HF Series

20 AMP

Features:

  • Replaces DO-4 and DO-5 (1N5816,1N6306)
  • High Current/ Voltage Version of 1N5811
  • Hyper Fast Recovery
  • PIV to 400 Volts
  • Low Reverse Leakage Current
  • Hermetically Sealed Void-Free Construction 3/
  • Monolithic Single Chip Construction
  • High Surge Rating
  • Low Thermal Resistance
  • Available in Surface Mount Versions
  • Equivalent to 1N6688-1N6689
  • TX, TXV, and Space Level Screening Available MAXIMUM RATINGS Symbol Value Units Peak Repetitive Reverse Voltage and DC Blocking Voltage SRM3HF SRM4HF VRRM VRWM VR 300

400 Volts

Average Rectified Forward Current (Resistive Load, 60Hz Sine Wave, TA=25◦C) IO 20 Amps Peak Surge Current (8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA=25oC) IFSM 475 Amps Operating and Storage Temperature T op & Tstg -65 to +175 oC Maximum Thermal Resistance (Axial – Junction to Lead, L=3/8”) (SMS – Junction to End Tab) (Button – Junction to Case) Axial ( ) Square Tab (SMS) Button (BTR) RθJL RθJE RθJC 3.0 2.5 1.0 oC/W Notes: 1/ For ordering information, price, operating curves, and availability, contact factory. 2/ Modified MIL-PRF-19500 Screening Flow – Consult Factory. 3/ PIND testing not required on void free devices per MIL-PRF-19500. Axial SMS Button NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0165F DOC

ELECTRICAL CHARACTERISTICS Symbol Max Unit Instantaneous Forward Voltage Drop (IF = 20Adc, 500 μsec Pulse, TA = 25oC) VF1 1.05 Vdc Instantaneous Forward Voltage Drop (IF = 20Adc, 300 μsec Pulse, TA = -65oC) VF2

1.2 Vdc

(Rated VR, 300 μsec Pulse Minimum, TA = 25oC) IR1 100 μA Reverse Leakage Current (Rated VR, 300 μsec Pulse Minimum, TA = 100oC) IR2 10 mA Junction Capacitance (VR =10 VDC, f = 1MHz, TA = 25oC) CJ 350 pF Reverse Recovery Time (IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25oC) trr 40 nsec CASE OUTLINES: Axial ( ) TOLERANCES (UNLESS SPECIFIED) .XX ± .03” .XXX ± .010” Square Tab (SMS) Button (BTR) Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SRM3HF thru SRM4HF Series NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0165F DOC