SRF620 JINGHENG | Alldatasheet
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Case: JEDEC ITO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750,method 2026 Polarity: As marked Mounting Position: Any Weight: 0.08ounce, 2.24 gram (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load,derate by 20%.) Dimensions in inches and (millimeters) R S E M I C O N D U C T O R Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop Single rectifier construction High surge capability For use in low voltage ,high frequency inverters, free wheeling ,and polarity protection applications High temperature soldering guaranteed:260 C/10 seconds, 0.25"(6.35mm)from case Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC SRF620 THRU SRF6200(SINGLE CHIP) SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to200 Volts Forward Current - 6.0Amperes Notes: 1.Pulse test: 300 s pulse width,1% duty cycle 3.Measured at 1MHz and reverse voltage of 4.0volts Maximum repetitive peak reverse voltage VRRM Volts Volts Volts Volts mA Amps Amps VRMS VDC I(AV) IFSM TSTG VF IR CJ TJ R JA R JL Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375"(9.5mm) lead length(see fig.1) Maximum instantaneous forward voltage at 6.0 A(Note 1 ) T =25 C T =100 C A A Typical thermal resistance (Note 2) Typical junction capacitance(Note 3) Operating junction temperature range Storage temperature range Maximum instantaneous reverse current at rated DC blocking voltage(Note 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL) 6.0 150.0 -65 to+150 -65 to+150 400500 25.0 8.0 0.2 2550 PF C/W C C 100 100 Symbols UnitsSRF 620 SRF 630 SRF 640 SRF 650 SRF 660 SRF 680 SRF 6100 SRF 6200 SRF 6150 200 140 200 150 105 150 ITO-220AC 0.177(4.50) 0.208(5.28) 0.029(0.73) 0.111(2.83) 0.140(3.55) 0.610(15.50) 0.136(3.45) 0.187(4.75) 0.272(6.90) 0.551(14.00) 0.029(0.73) 0.138(3.50) 0.192(4.88) 0.019(0.47) 0.101(2.57) 0.128(3.25) DIA 0.571(14.50) 0.102(2.60) 0.167(4.25) 0.256(6.50) 0.496(12.60) 0.019(0.47) PIN 0.388(9.85) 1 2 0.130(3.31) 0.110(2.81) 0.410(10.42) 0.056(1.43) 0.043(1.10) 1.161(29.50) 1.083(27.50) JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM1-60
RATINGS AND CHARACTERISTIC CURVES SRF620 THRU SRF6200(SINGLE CHIP) 0.01 0.001 0.01 0.1 0.1 100 125 150 175 200 40 60 80 100 1 10 100 0 50 100 150 2.0 6.0 4.0 8.0 FIG.1-FORWARD CURRENT DERATING CURVE FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS AVERAGE FORWARD CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT( AMPERES) INSTANTANEOUS REVERSE CURRENT MILL (AMPERES) PEAK FORWARD SURGE CURRENT(AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) REVERSE VOLTAGE. VOLTS T, PULSE DURATION ,sec. PERCENT OF RATED PEAK REVERSE VOLTAGE% NUMBER OF CYCLES AT 60Hz LEAD TEMPERATURE ( C) TJ=25 C TJ=125 C PULSE WIDTH=300 S 1% DUTY CYCLE TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TJ=25 C RESISTIVE OR INDUCTIVE LOAD 0.1 0.1 0.10.01 100 100 100 4000 1000 100 FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE JUNCTION CAPACITANCE(pF) TRANSIENT THERMAL IMPEDANCE, C/ W TJ=25 C f=1.0MHZ Vsig=50mVp-p SRF620 – SRF640 SRF650 – SRF6200 SRF620 – SRF640 SRF650 – SRF6200 SRF620 – SRF640 SRF650 – SRF6200 TJ=75 C TJ=125 C JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM1-61