SRF4427 ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- Low Cost SO-8 Plastic Surface Mount Package.
- S-Parameter Characterization
- Tape and Reel Packaging Options Available
- Maximum Available Gain – 20dB(typ) @ 200MHz RF AND MICROWAVE DISCRETE LOW POWER TRANSISTORS GENERAL RF AMPLIFIER APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website atWWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC (off) Value Symbol Test Conditions Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) 18 - - Vdc BVCES Collector-Base Breakdown Voltage (IC = 5 mAdc, IE = 0) 36 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) 4 - - Vdc ICBO Collector Cutoff Current (VCB = 12.5 Vdc) - - 800 uA STATIC (on) Value Symbol Test Conditions Min. Typ. Max. Units HFE DC Current Gain (VCE = 5 Vdc, IC = 150 mAdc) 20 200 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Units FTAU Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 12 Vdc, f = 200 MHz) 1.3 GHz COB Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) 3.4 GHz FUNCTIONAL Value Symbol Test Conditions Min. Typ. Max. Unit GPE Power Gain VCE = 12 Vdc, f = 175 MHz, Pin = 15 mW 17 18 - dB |S21|2 Insertion Gain VCE = 12 Vdc , IC = 50 mAdc, f = 200 MHz 12 14 - dB
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website atWWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 PACKAGE MECHANICAL DATA 1. 4. 8. 5. PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER