SRF2020 GXELECTRONICS | Alldatasheet
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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load, derate by 20%.)
FEATURES
Case: JEDEC ITO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750,method 2026 Polarity: As marked Mounting Position: Any Weight: 0.08ounce, 2.24 gram Dimensions in inches and (millimeters) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters, free wheeling ,and polarity protection applications Dual rectifier construction High temperature soldering guaranteed:260° C/10 seconds,, 0.25"(6.35mm)from case Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Notes: 1.Pulse test: 300 s pulse width,1% duty cycle 2.Thermal resistance from junction to case SRF2020 THRU SRF20200(SINGLE CHIP) SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 20Amperes Maximum repetitive peak reverse voltage VRRM Volts Volts Volts Volts mA Amps Amps VRMS VDC I(AV) IFSM TSTG VF IR R JC Maximum RMS voltage Maximum DC blocking voltage Maximum instantaneous forward voltage at 20.0 A T =25 C T =125 C C C Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range Maximum instantaneous reverse current at rated DC blocking voltage(Note 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) -65 to+150 -65 to+150 3.0 0.2 30 50 0.70 C/W C C TJ 100 150 20.0 200.0 Symbols UnitsSRF 2020 SRF 2030 SRF 2040 SRF 2050 SRF 2060 SRF 2080 SRF 20100 Maximum average forward rectified current See Fig.1 SRF 20150 SRF 20200 150 105 200 140 200100 SRF2060 0.60 0.90 0.75 0.85 0.95 ITO-220AC 0.177(4.50) 0.208(5.28) 0.029(0.73) 0.111(2.83) 0.140(3.55) 0.610(15.50) 0.136(3.45) 0.187(4.75) 0.272(6.90) 0.551(14.00) 0.029(0.73) 0.138(3.50) 0.192(4.88) 0.019(0.47) 0.101(2.57) 0.128(3.25) DIA 0.571(14.50) 0.102(2.60) 0.167(4.25) 0.256(6.50) 0.496(12.60) 0.019(0.47) PIN 0.388(9.85) 1 2 0.130(3.31) 0.110(2.81) 0.410(10.42) 0.056(1.43) 0.043(1.10) 1.161(29.50) 1.083(27.50) XH 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM
0.001 0.01 0.1 120 160 100 140 200 40 60 80 100 1 10 100 FIG.1-FORWARD CURRENT DERATING CURVE FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT( AMPERES) INSTANTANEOUS REVERSE CURRENT (mA) PEAK FORWARD SURGE CURRENT(AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) REVERSE VOLTAGE. VOLTS T, PULSE DURATION ,sec. PERCENT OF RATED PEAK REVERSE VOLTAGE% NUMBER OF CYCLES AT 60Hz TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TJ=125 C TJ=25 C TJ=75 C 0.1 0.1 0.10.01 100 100 100 1000 4000 100 FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE JUNCTION CAPACITANCE(pF) TRANSIENT THERMAL IMPEDANCE, C/ W TJ=25 C f=1.0MHZ Vsig=50mVp-p 0 50 100 150 AVERAGE FORWARD CURRENT AMPERES LEAD TEMPERATURE ( C) INDUCTIVE OR RESISTIVE LOAD 0.01 0.1 PULSE WIDTH=300 S 1% DUTY CYCLE TJ=125 C TJ=25 C 180 200 RATINGS AND CHARACTERISTIC CURVES SRF2020 THRU SRF20200(SINGLE CHIP) 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM