SRADM1001 SENSITRON | Alldatasheet

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©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com SRADM1001 TECHNICAL DATA DATA SHEET 5392, Preliminary.1 HERMETIC RAD HARD POWER N-CHANNEL MOSFET ARRAY FEATURES:  Six individual 250 Volt, 0.16 Ohm, 12.4A RAD HARD MOSFETs (1)  Single Event Effect (SEE) hardened, LET 55, Range: 90μm o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V  Single Event Effect (SEE) hardened, LET 85, Range: 118μm o VGS = -10V, VDS = 250V o VGS = -15V, VDS = 120V  Total Ionization Dose (TID) hardened, 100kRad (Level R)  Fast Switching  Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ON-STATE DRAIN CURRENT ID - - 12.4 Amps PULSED DRAIN CURRENT (LIMITED BY TJMAX) IDM - - 50 Amps OPERATING AND STORAGE TEMPERATURE TOP/TSTG -55 - +150 C TOTAL DEVICE DISSIPATION PD - - TBD Watts THERMAL RESISTANCE, JUNCTION TO CASE RthJC - - TBD C/W AVALANCE ENERGY EAS - - 60 mJ

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250A BVDSS 250 - - Volts STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 8A RDS(ON) 0.16 GATE THRESHOLD VOLTAGE VDS ≥ VGS, ID = 1mA VGS(th) 2.0 - 4.0 Volts ZERO GATE VOLTAGE DRAIN CURRENT VDS = 200V, VGS = 0V IDSS GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V IGSS - 100 -100 nA TURN ON DELAY TIME VDD = 125V RISE TIME ID = 8A, TURN OFF DELAY TIME RG = 4.7 FALL TIME td(ON) tr td(OFF) tf nsec DIODE FORWARD VOLTAGE IS = 12.4A VGS = 0V VSD - - 1.25 Volts REVERSE RECOVERY TIME VDD = 125V If = 12.4A trr - - 400 nsec INPUT CAPACITANCE VGS = 0 V OUTPUT CAPACITANCE VDS = 100 V REVERSE TRANSFER CAPACITANCE f = 1.0MHz Ciss Coss 1300 1900 150 pF **NOTE: This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130, and may not be exported without the appropriate U.S. Department of State authorization.

©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com SRADM1001 TECHNICAL DATA DATA SHEET 5392, Preliminary.1 SCHEMATIC MECHANICAL DIMENSIONS: in Inches / mm .625 ± .010

1.00 REF

.625 ± .010 C C .500 ± .005 .050 TYP .015 TYP R .010 TYP .125 MAX .05 REF 11 12 1 D1 2 S1 3 G1

4 N/C

15 N/C

©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798  www.sensitron.com  sales@sensitron.com SRADM1001 TECHNICAL DATA DATA SHEET 5392, Preliminary.1 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.