SR820 ZSELEC | Alldatasheet
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! Sc hottk y Barrier Chip ! Guard Ring Die Construction for Transient Protection ! H i g h C u r r e n t C a p a b i l i t y A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity P r o t e c t i o n A p p l i c a t i o n s C /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01D Mechanical D ata ! Cas e: DO -201AD, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L = 95°C (Not e 1) IO Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward V o ltage @I F = 8. 0A V FM P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.1 20 mA T y pical Junction Capacitance (Note 2) Cj T y pical Thermal Resistance (Note 1) R/G01JA Operat i ng and Storage Temperature Range Tj, TSTG Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 1 of 2 SR820 – SR8200 V SR820 SR830 SR840 SR850 SR860 SR880 SR8100 SR8150 SR8200 0.55 0.70 0.90 V 100 150 105 200 140 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DO-201 AD Di m M in Max A 25. 4 — B 8.50 9. 50 C 1.20 1.30 D 5.0 5.60 A ll Dimensions in mm DO-201AD Di m M in Max A 24. 5 — B 7. 20 9. 50 C 1.10 1.30 D 5.00 5.60 A ll Dimensions in mm
/G01 SR820 – SR8200 Z ibo Seno Electronic Engineering Co., Ltd. 100 1000 0.1 11 0 100 C , CAPACITANCE (pF)j V , REVERSEVOLTAGE (V) Fig. 4 Typical Junction Capacitance R f=1.0MHz T = 25Cj ° 0 20 40 60 80 100 120 140 I,INSTANTANEOUSREVERSECURRENT(mA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100Cj ° T =
75 Cj °
T = 25Cj ° 100 1.0 0.1 0.01 2 of 2 SR820 – SR8200 www.senocn.com 5.0 IN STANTANEOUS FORWARD CURRENT,(A) INSTANTANEOUS FORWARD VOLTAGE, (V) 1.0 0.1 SR880- 8100 TA = 25℃ 82008150SR - SR830-840 SR Fig. 2 /G01/G01 1 10 100 I , PEAKFORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) 120 150 5 5 0 75 100 125 150 I AVERAGE FORWARD CURRENT (A)(A V), T , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° Resistive or Inductive Load 850-860