SR5100L THINKISEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
F F e e a a t t u u r r e e s s x Plastic package has Underwriters Laboratory Flammability Classification 94V-0 x Metal silicon junction, majority carrier conduction x Guard ring for overvoltage protection x Low power loss, high efficiency x High current capability, low forward voltage drop x High surge capability x For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications x High temperature soldering guaranteed:250к/10 seconds at terminals, 0.375”(9.5mm)lead length, 5lb.(2.3kg) tension M M e e c c h h a a n n i i c c a a l l D D a a t t a a x Case: Molded plastic body, JEDEC DO-201AD. x Terminals: Axial leads, solderable per MIL-STD-750, method 2026 x Polarity: Color band denotes cathode end. x Mounting Position: Any DO-201AD Unit: inch(mm) .052(1.3) .210(5.3) 1.0(25.4)MIN. 1.0(25.4)MIN. .375(9.5).285(7.2) .048(1.2) .188(4.8) SR5100L Pb Free Plating Product SR5100L Pb
5.0 Ampere,100Volt Low Vf Schottky Barrier Rectifier Diode
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/2Rev.05 MAXIMUM RATINGS(T A =25 o C unless otherwise noted) ELECTRICAL CHARACTERISTICS(T A =25 o C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Maximum repetitive peak reverse voltage V RRM 100 V Maximum rms voltage V RMS 70 V Maximum average forward rectified current I F(AV) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load I FSM 150 A Typical Thermal Resistance R Θ JA o C/W Operating junction temperature range T J -55 to + 150 o C Storage temperature range T STG -55 to + 150 o C PARAMETER SYMBOL TEST CONDITIONS TYP . MAX. UNIT Breakdown voltage V BR I R =0.5mA T J =25 o C1 0 0 - V Instantaneous forward voltage V F I F =1A I F =3A I F =5A T J =25 o C 0.44 0.58 0.68 0.70 V I F =1A I F =3A I F =5A T J =125 o C 0.35 0.49 0.56 0.6 V Reverse current I R V R =70V T J =25 o C1 0 - μA V R =100V T J =25 o C T J =100 o C T J =125 o C μA mA mA
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/2Rev.05 Fig.4 Typical Forward Characteristics 100 1000 0.1 1 10 100 V R , Reverse Bias Voltage (V) C J , Junction Capacitance (pF) Fig.2 Typical Junction Capacitance 0 25 50 75 100 125 150 T C , Case Temperature (°C) I F F orwar d C urrent (A) Fig.1 Forward Current Derating Curve Mounted on P.C.B with 10x10cm copper surface at 0.375" (9.5mm) lead length 0.001 0.01 0.1 20 40 60 80 100 T J = 25°C T J = 100°C T J = 75°C T J =125°C Fig.3 Typical Reverse Characteristics 0.1 V F , Forward Voltage (V) T J = 125°C T J = 100°C T J = 75°C T J = 25°C Percent of Rated Peak Reverse Voltage (%) I R , Reverse Current (mA) I F , Forward Current (A)