SR20100LCT JINGHENG | Alldatasheet

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R SR20100LCT,SRF20100LCT,SR20100LD1 LOW VF SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 100 Volts Forward Current - 20.0Amperes (Ratings at 25℃ ambient temperature unless otherwise specified ) S E M I C O N D U C T O R JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM4-1

FEATURES

Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,low forward voltage drop High forward surge capability High frequency operation Meets MSL Level 1，per J-STD-020,LF MAX peak of 245℃（for TO-263 package） Solder bath temperature 275℃ maximum，10s，per JESD22-B106（for TO-220AB and ITO-220AB package） Component in accordance to RoHS 2011/65/EU PbPb RoHS COMPLIANT TYPICAL APPLICATIONS For use in low voltage ,high frequency inverters ,DC/DC converters,free wheeling ,and polarity protection applications Case: JEDEC TO-220AB、ITO-220AB、TO-263 Molding compound meets UL94V-0 flammability rating Terminals: Lead solderable per J-STD-002 and JESD22-B102 Polarity: As marked Mounting Torque: 10 in-Ibs maximum JF SRF20100LCT JF R L S 100 TO-220AB ITO-220AB Pin1 Pin3 Pin2 CA ES JF SR20100LCT 1 2 3 1 2 3 Pin1 Pin3 Pin2 Pin1 Pin2 K HEATSINK SR20100LCT SRF20100LCT SR20100LD1 TO-263 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF=10.0A(125℃） TJ(MAX) 2×10A 100V 200A 150℃ 0.63V IR 20μA Package TO-220AB,ITO-220AB, TO-263 Diode variations Common cathode K Maximum repetitive peak reverse voltage VRRM A A IF(AV) IFSM ,TstgTJ Maximum average forward rectified current (see fig.1) Operating junction and Storage temperature range Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL) 10.0 200 -55 to+150 ℃ 100 Symbol UnitSR20100LCT, SRF20100LCT,SR20100LD1Parameter 20.0 Per leg Total device V Isolation voltage(ITO-220AB only)from terminals to heatsink t=1 min VAC 1500 V Peak repetitive reverse current per diode at tp=2μs 1KHz IRRM 0.5 A

ELECTRICAL CHARACTERISTCS（TA=25℃ Unless otherwise noted) Notes: 1.Pulse test: 300 μs pulse width,1% duty cycle 2.Pulse test: pulse width≤40ms THERMAL CHARACTERISTCS（TA=25℃ Unless otherwise noted) JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM4-2 RATINGS AND CHARACTERISTIC OF SR20100L,SRF20100LCT,SR20100LD1 Parameter Test Conditions Symbol TYP. MAX. Unit Instaneous forward voltage Per leg IF=10.0A TA=25℃ TA=100℃ Reverse current VR=100V TA=25℃ TA=100℃ VF IR 0.66 0.70 V 20 50 μA mA 2 5 Typical junction capacitance 4V,1MHz CJ pF TA=125℃ TA=125℃ 0.63 0.64 - 10 20 570 TA=25℃ TA=100℃ TA=125℃ Per leg IF=5.0A 0.53 0.51 0.50 0.57 AVAILABALE PACK INFORMATION 3.Thermal resistance from junction to case Typical thermal resistance R JC 2.5 ℃/W3) 4.5 Parameter Symbol UnitSR20100LCT SRF20100LCT SR20100LD1 2.5 Pack Carton SizeL×W×H(mm)Quantity(pcs/box)Box Size L×W×H(mm) Quantity(box/carton) P/T 565×225×1701000558×148×38 5 Product code SR20100LCT-TO-220AB P/T 565×225×1701000558×148×38 5SRF20100LCT-ITO-220AB P/TSR20100LD1-TO-263 565×225×1701000558×148×38 5

0.01 0.1 100 200 200 40 60 80 100 0 20 40 60 80 100 120 150 8.0 12.0 4.0 FIG.1-FORWARD CURRENT DERATING CURVE FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS AVERAGE FORWARD CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT( AMPERES) INSTANTANEOUS REVERSE CURRENT (mA) PEAK FORWARD SURGE CURRENT(AMPERES) INSTANTANEOUS FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE% NUMBER OF CYCLES AT 60Hz CASE TEMPERATURE ( ℃) TJ=25℃ RESISTIVE OR INDUCTIVE LOAD FIG.5-TYPICAL JUNCTION CAPACITANCE TJ=100℃ TJ=125℃ JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM4-3 REVERSE VOLTAGE. VOLTS 0.1 1 10 100 100 4000 1000JUNCTION CAPACITANCE(pF) 140 RATINGS AND CHARACTERISTIC OF SR20100L,SRF20100LCT,SR20100LD1 100 150 200 250 300 1 10 100 TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 16.0 20.0 PULSE WIDTH=300μS 1% DUTY CYCLE TJ=25℃ TJ=125℃ TJ=100℃ SR20100LCT SR20100LD1 SRF20100LCT Per Diode Per Diode Per Diode

Dimensions in inches and (millimeters) 0.159(4.05) 0.105(2.67) 0.208(5.28) 0.037(0.94) 0.114(2.90) 0.161(4.10) 0.055(1.39) TO-220AB 0.185(4.70) 0.283(7.20) 0.560(14.22) 0.023(0.58) 0.138(3.50) 0.095(2.41) 0.192(4.88) 0.027(0.68) 0.102(2.60) 0.147(3.74) DIA 0.045(1.14) 0.175(4.44) 0.244(6.20) 0.516(13.10) 0.014(0.35) 0.410(10.41) PIN 0.390(9.91) 1 2 3 1.161(29.50) 1.106(28.10) 0.053(1.34) 0.047(1.20) 0.114(2.90) 0.098(2.50) ITO-220AB 0.104(2.64) 0.029(0.73) 0.111(2.83) 0.140(3.55) 0.110(2.80) 0.187(4.75) 0.272(6.90) 0.551(14.00) 0.029(0.73) 0.096(2.44) 0.019(0.47) 0.101(2.57) 0.128(3.25) DIA 0.102(2.60) 0.167(4.25) 0.256(6.50) 0.512(13.00) 0.019(0.47) PIN 1 2 3 0.130(3.31) 0.111(2.81) 0.056(1.43) 0.043(1.10) 0.410(10.41) 0.390(9.91) 0.067(1.70) 0.059(1.50) PACKAGE OUTLINE DIMENSIONS 0.42(10.67)MIN 0.560(14.22) 0.639(16.22) 0.095(2.41) 0.083(2.10) 0.08(1.032)MIN 0.15(3.81)MIN 0.190(4.83) 1 2K 0.380(9.65) 0.420(10.67) 0.245(6.22) MIN 0.560(14.22) 0.639(16.22) 0.027(0.69) 0.037(0.94) 0.095(2.41) 0.083(2.10) 0.320(8.13) 0.360(9.14) 0.090(2.29) 0.131(3.32) 0.134(3.40) 0.105(2.67) 0.018(0.46) 0.014(0.35) 0.045(1.14) 0.055(1.40) 0.036(0.92) 0.066(1.68) 0.160(4.06) 0.047(1.20) 0.053(1.34) TO-263 Suggested Pad Layout （TO-263） JINAN JINGHENG ELECTRONICS CO., LTD. HTTP://WWW.JINGHENGGROUP.COM4-4